4-109
Surface Mount Low Noise
Silicon␣ Bipolar Transistor Chip
Technical Data
Features
• Low Noise Figure:
1.4 dB Typical at 1.0␣ GHz
1.8 dB Typical at 2.0␣ GHz
• High Associated Gain:
18.0 dB Typical at 1.0␣ GHz
13.0 dB Typical at 2.0␣ GHz
• High Gain-Bandwidth
Product: 7.0 GHz Typical fT
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
AT-41411
SOT-143 Plastic
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-41411 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41411 is housed in a low cost
low parasitic 4 lead SOT-143
surface mount package. The
SOT-143 is an industry standard
and is compatible with high
volume surface mount assembly
techniques. The 4 micron emitter-
to-emitter pitch enables this
transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50 Ω in the 1 to 2 GHz
frequency range, makes this
device easy to use as a low noise
amplifier.
The AT-41411 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Pin Connections
GND
OUTPUT
INPUT
V
CC
414
5965-8924E
4-110
AT-41411 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 50
PTPower Dissipation[2,3] mW 225
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2,4]:
θjc = 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 1.8 mW/°C for TC > 26°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number Increment Comments
AT-41411-TR1 3000 Reel
AT-41411-BLK 100 Bulk
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions[1] Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 20 mA f = 1.0 GHz dB 14.5 16.5
f = 2.0 GHz 11.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 17.0
VCE = 8 V, IC = 20 mA
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 20 mA f = 2.0 GHz dB 13.0
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.4
f = 2.0 GHz 1.8
f = 4.0 GHz 3.5
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.0
f = 2.0 GHz 13.0
f = 4.0 GHz 9.0
fTGain Bandwidth Product: VCE = 8 V, IC = 20 mA GHz 7.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0
Notes:
1.
Refer to PACKAGING Section, “Tape-and-Reel Packaging for Semiconductor Devices.”
4-111
AT-41411 Typical Performance, TA = 25°C
FREQUENCY (GHz)
GAIN (dB)
I
C
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V, f = 2.0 GHz.
Figure 1. Noise Figure and Associated
Gain vs. Frequency. V
CE
= 8 V,
I
C
=10mA.
GAIN (dB)
0 102030
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 20 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
24
21
18
15
12
9
6
3
0
4
2
0
NF
O
(dB)
4
2
0
NF
O
(dB)
0.5 2.01.0 3.0 4.0
16
14
12
10
G
A
G
A
NF
O
NF
O
I
C
(mA)
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0102030
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
1.0 GHz
4-112
AT-41411 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C␣ =␣ 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .85 -30 27.3 23.20 158 -37.7 .013 64 .93 -11
0.5 .58 -112 21.7 12.18 109 -29.1 .035 44 .62 -30
1.0 .49 -156 16.5 6.70 85 -27.2 .044 43 .50 -33
1.5 .49 178 13.2 4.58 71 -25.0 .056 47 .46 -36
2.0 .50 160 10.8 3.45 59 -23.4 .068 47 .45 -41
2.5 .53 153 9.0 2.82 53 -22.5 .075 56 .43 -43
3.0 .55 142 7.5 2.37 43 -21.0 .089 54 .43 -53
3.5 .56 133 6.1 2.02 33 -19.8 .102 52 .44 -63
4.0 .56 121 4.9 1.76 23 -18.8 .115 49 .46 -73
AT-41411 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C␣ =␣ 20 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .65 -46 30.4 33.07 150 -40.0 .010 59 .89 -15
0.5 .46 -137 22.4 13.21 100 -32.0 .025 56 .57 -26
1.0 .43 -175 16.7 6.85 80 -28.4 .038 58 .52 -29
1.5 .44 163 13.3 4.63 67 -26.4 .048 61 .51 -32
2.0 .47 148 10.8 3.47 56 -24.2 .062 61 .50 -37
2.5 .50 140 9.0 2.82 50 -22.9 .071 60 .47 -39
3.0 .53 132 7.5 2.36 40 -20.7 .092 61 .46 -48
3.5 .55 122 6.1 2.02 30 -19.6 .105 57 .45 -60
4.0 .56 112 4.8 1.74 19 -18.3 .122 53 .45 -73
A model for this device is available in the DEVICE MODELS section.
AT-41411 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.3 .12 4 0.17
0.5 1.3 .10 23 0.17
1.0 1.4 .07 57 0.16
2.0 1.8 .09 -158 0.16
4.0 3.5 .31 -87 0.38
4-113
SOT-143 Plastic Dimensions
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.10 (0.004)
0.013 (0.0005)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.92 (0.036)
0.78 (0.031)
E
E
B
C
XXX
PACKAGE
MARKING
CODE 1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.54 (0.021)
0.37 (0.015)
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
TOP VIEW
0.15 (0.006)
0.09 (0.003)
0.69 (0.027)
0.45 (0.018)
END VIEW
SIDE VIEW
