DMN3730U-7 - DIODES Incorporated

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 1 of 7

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30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

Product Summary

V(BR)DSS Max RDS(on) ID Max (Note 5)

TA = 25°C

30V 460mΩ @ VGS= 4.5V 0.94A

560mΩ @ VGS= 2.5V 0.85A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Load switch

• Portable applications

• Power Management Functions

Features and Benefits

• Low VGS(th), can be driven directly from a battery

• Low RDS(on)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2kV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish-Matte Tin.

• Weight: 0.08 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN3730U-7 N3U 7 8 3,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N3U = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

SOT23

Top View Top View

Pin-Out

Equivalent Circuit

D

GS

ESD PROTECTED TO 2kV

Source

Gate

Drain

Body

Diode

Gate

Protection

Diode

N3U

YM

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 2 of 7

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Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±8 V

Continuous Drain Current Steady

State

TA = 25°C (Note 5)

TA = 85°C (Note 5)

TA = 25°C (Note 4) ID 0.94

0.68

0.75 A

Pulsed Drain Current (Note 6) IDM 10 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD 0.45 W

(Note 5) 0.71 W

Thermal Resistance, Junction to Ambient

(Note 4) RθJA 275 °C/W

(Note 5) 177 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycl e = 1%.

Thermal Characteristics

0.001 0.01 0.1 1 10 100 1000

T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

0

10

20

30

40

50

60

70

80

90

100

P

(pk),

P

EAK

T

R

ANSIEN

T

P

O

WE

R

(W)

Single Pulse

Rthja = 176C/W

Rthja(t) = Rthja*r(t)

T - T = P*Rthja (t)

JA

0.01 0.1 1 10 100

V , DRAIN-SOURCE VOL TAGE

Fi g. 2 SOA, Safe Operat ion Area

DS

100

0.001

0.01

0.1

1

10

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

I (A) @

P = 1s

D

W

I (A) @

P = 1ms

D

W

I (A) @

P = 100µs

D

W

I (A) @

P = 10µs

D

W

I (A) @ DC

D

I (A) @

P = 100ms

D

W

I (A) @

P = 10ms

D

W

R

Limited

DS(ON)

T , (Max) = 150°C

T = 25°C

Single Pulse

J

A

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 3 of 7

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0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R (t) = r(t)*R

R = 176C/W

Duty Cycle, D = t1/t2

θθ

θ

JA JA

JA

t1, PULSE DURATION TIME (sec)

Fig . 3 Transient T herma l Re sistance

0.001

0.01

0.1

1

R(t), TRANSIENT THERMAL RESISITANCE

r(t) @ D=Single Pulse

r(t) @ D=0.005

r(t) @ D=0.01

r(t) @ D=0.05

r(t) @ D=0.1

r(t) @ D=0.3

r(t) @ D=0.5

r(t) @ D=0.7

r(t) @ D=0.9

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS 30 - - V

VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V

Gate-Source Leakage IGSS - - 3 μA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage VGS

(

th

)

0.45 - 0.95 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance (Note 7) RDS(on) - -

460 mΩ VGS = 4.5V, ID = 200mA

560 VGS = 2.5V, ID = 100mA

730 VGS = 1.8V, ID = 75mA

Forward Transfer Admittance |Yfs| 40 - - mS

VDS = 3V, ID = 10mA

Diode Forward Voltage (Note 7) VSD - 0.7 1.2 V

VGS = 0V, IS = 300mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Ciss - 64.3 - pF VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 6.1 - pF

Reverse Transfer Capacitance Crss - 4.5 - pF

Gate Resistance R

g

- 70 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge Q

g

- 1.6 - nC VGS = 4.5V, VDS = 15V,

ID = 1A

Gate-Source Charge Q

g

s - 0.2 - nC

Gate-Drain Charge Q

g

d - 0.2 - nC

Turn-On Delay Time tD

(

on

)

- 3.5 - ns VDS = 10V, ID = 1A

VGS = 10V, RG = 6Ω

Turn-On Rise Time t

r

- 2.8 - ns

Turn-Off Delay Time tD

(

off

)

- 38 - ns

Turn-Off Fall Time tf - 13 - ns

Notes: 7. Measured under pulsed conditions to minimize sel f-hea ting effect. Pulse width ≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 4 of 7

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012345

Fig . 4 Typical Output Ch ar acteri st ic

V , DRAIN-SOURCE VOL TAGE (V)

DS

0

0.5

1.0

1.5

2.0

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.5V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 10V

GS

0

0.5

1.0

1.5

I, D

R

AIN

C

U

R

EN

T

(A)

D

2.0

00.511.522.53

Fig. 5 Typical Transfer Characteristic

V , GATE-SOURCE VOL TAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

0 0.4 0.8 1.2 1.6 2

Fig. 6 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

0

0.2

0.4

0.6

0.8

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

0 0.25 0.5 0.75 1 1.25 1.5

I , DRAIN CURRENT (A)

D

Fig. 7 Typical On-Resistance

vs . Dr ai n Current and Temperat ur e

0

0.2

0.4

0.6

0.8

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig. 8 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESIST ANCE (NORMALIZED)

DSON

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

Fig. 9 On-Resistance Va riation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

0

0.2

0.4

0.6

0.8

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DSON

Ω

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 5 of 7

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Fig. 10 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

1.

2

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

I = 250µA

D

I = 1mA

D

0 0.2 0.4 0.6 0.8 1 1.2

Fig. 11 Diod e Forward Voltage vs. Current

V , SOURCE-DRAIN VOL TAGE (V)

SD

0

0.4

0.8

1.2

1.6

2.0

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

0 5 10 15 20 25 30

Fig. 12 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

C

,

C

A

P

A

C

IT

A

N

C

E (p

F

)

C

iss

C

rss

C

oss

f = 1MHz

1

10

100

1,000

10,000

0 5 10 15 20 25 30

Fig. 13 Typical Leakage Current

vs. D r ai n- Source Vo ltage

V , DRA IN-SOURCE VOLTAGE (V)

DS

I, LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

2

4

6

8

0 0.5 1 1.5 2 2.5 3

Fig. 14 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

V , GA T E-SOURCE VOLTAGE (V)

GS

V = 15V

I = 1A

DS

D

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 6 of 7

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Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2 1 of 7

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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