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GBL
Dim Min Max Min Max
A 20.7 20.9 0.815 0.823
B 10.4 10.7 0.409 0.421
C 3.2 3.6 0.126 0.142
D 17.5 18.5 0.689 0.728
E 1.50 2.2 0.059 0.087
G2.12 2.4 0.083 0.094
H 3.17 x 45° 0.125 x 45°
J 0.90 1.20 0.035 0.047
K 1.15 1.55 0.045 0.061
L 0.45 0.65 0.018 0.026
P 4.8 5.3 0.189 0.209
In mm In inch
0
1
2
3
4
5
20 40 60 80 100 120 140
I , AVERAGE OUTPUT CURRENT (A)
O
T , CASE TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
C
Single Phase Half Wave
60 Hz Resistive or Inductive Load
0.01
0.1
1.0
10
0 20 40 60 80 100 120 140
I,IN
S
TANTANE
O
U
S
REVER
S
E
C
URRENT
(
A
)
R
µ
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics, per element
T = 100°C
C
T = 25°C
A
0
50
100
150
200
250
11010
0
8.3ms Single Half Sine-Wave
JEDEC Method
I , PEAK F
O
RWARD
S
UR
G
E
C
URRENT
(
A
)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
0.01
0.1
1.0
20
00.2 0.4 0.6 0.8 1.0 1.2 1.
4
I , INSTANTANEOUS FWD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2TypicalForwardCharacteristics, per element
F
Tj = 25ºC
Pulse Width = 300 s
2% Duty Cycle µ
10
B
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SEMICONDUCTOR
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