74AUP2G00 Low-power dual 2-input NAND gate Rev. 9 -- 28 October 2016 Product data sheet 1. General description The 74AUP2G00 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down. 2. Features and benefits Wide supply voltage range from 0.8 V to 3.6 V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.2 V to 1.95 V) JESD8-5 (1.8 V to 2.7 V) JESD8-B (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114F Class 3A exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101E exceeds 1 000 V Low static power consumption; ICC = 0.9 A (maximum) Latch-up performance exceeds 100 mA per JESD78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial power-down mode operation Multiple package options Specified from 40 C to +85 C and 40 C to +125 C 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74AUP2G00DC 40 C to +125 C VSSOP8 plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 74AUP2G00GT 40 C to +125 C XSON8 plastic extremely thin small outline package; no leads; 8 terminals; body 1 1.95 0.5 mm SOT833-1 74AUP2G00GF 40 C to +125 C XSON8 extremely thin small outline package; no leads; 8 terminals; body 1.35 1 0.5 mm SOT1089 74AUP2G00GD 40 C to +125 C XSON8 plastic extremely thin small outline package; no leads; 8 terminals; body 3 2 0.5 mm SOT996-2 74AUP2G00GM 40 C to +125 C XQFN8 plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 1.6 0.5 mm SOT902-2 74AUP2G00GN 40 C to +125 C XSON8 extremely thin small outline package; no leads; 8 terminals; body 1.2 1.0 0.35 mm SOT1116 74AUP2G00GS 40 C to +125 C XSON8 extremely thin small outline package; no leads; 8 terminals; body 1.35 1.0 0.35 mm SOT1203 74AUP2G00GX[1] 40 C to +125 C [1] X2SON8 plastic thermal enhanced extremely thin small outline SOT1233 package; no leads; 8 terminals; body 1.35 0.8 0.35 mm Type number 74AUP2G00GX is in development. 4. Marking Table 2. Marking codes Type number Marking code[1] 74AUP2G00DC p00 74AUP2G00GT p00 74AUP2G00GF pA 74AUP2G00GD p00 74AUP2G00GM p00 74AUP2G00GN pA 74AUP2G00GS pA 74AUP2G00GX pA [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 74AUP2G00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 2 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 5. Functional diagram $ % $ % < % < < DDK Fig 1. $ DDK Logic symbol Fig 2. IEC logic symbol PQD Fig 3. Logic diagram (one gate) 6. Pinning information 6.1 Pinning 74AUP2G00 1A 1 8 VCC 1B 2 7 1Y 2Y 3 6 2B 74AUP2G00 1A 1 8 VCC 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A GND Pin configuration SOT765-1 74AUP2G00 Product data sheet 5 2A 1A 1 8 VCC 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A 001aae363 001aai218 Transparent top view 001aae362 Fig 4. 4 74AUP2G00 Fig 5. Pin configuration SOT833-1, SOT1089, SOT1116 and SOT1203 All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 Transparent top view Fig 6. Pin configuration SOT996-2 (c) Nexperia B.V. 2017. All rights reserved 3 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 74AUP2G00 $83* 8 1Y VCC terminal 1 index area 1 7 1A $ 2B 2 6 1B 2A 3 5 2Y < % $ 9&& % 4 *1' < GND 001aae364 DDD Transparent top view Fig 7. Pin configuration SOT902-2 7UDQVSDUHQWWRSYLHZ Fig 8. Pin configuration SOT1233 6.2 Pin description Table 3. Symbol Pin description Pin Description SOT765-1, SOT833-1, SOT1089, SOT996-2, SOT902-2 SOT1116, SOT1203 and SOT1233 1A, 2A 1, 5 7, 3 data input 1B, 2B 2, 6 6, 2 data input GND 4 4 ground (0 V) 1Y, 2Y 7, 3 1, 5 data output VCC 8 8 supply voltage 7. Functional description Table 4. Function table[1] Input Output nA nB nY L L H L H H H L H H H L [1] H = HIGH voltage level; L = LOW voltage level. 74AUP2G00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 4 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current Conditions VI < 0 V [1] VO < 0 V [1] Min Max Unit 0.5 +4.6 V 50 - 0.5 +4.6 50 - 0.5 +4.6 mA V mA VO output voltage Active mode and Power-down mode IO output current VO = 0 V to VCC - 20 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C - 250 mW total power dissipation Ptot [1] [2] Tamb = 40 C to +125 C [2] V The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. For VSSOP8 packages: above 110 C the value of Ptot derates linearly at 8.0 mW/K. For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly at 7.8 mW/K. For X2SON8 package: above 118 C the value of Ptot derates linearly with 7.7 mW/K. 9. Recommended operating conditions Table 6. Operating conditions Symbol Parameter VCC supply voltage VI input voltage VO output voltage Conditions Tamb ambient temperature t/V input transition rise and fall rate 74AUP2G00 Product data sheet Min Max Unit 0.8 3.6 V 0 3.6 V Active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V 40 +125 C - 200 ns/V VCC = 0.8 V to 3.6 V All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 5 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC = 0.8 V 0.70 VCC - - V VCC = 0.9 V to 1.95 V 0.65 VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V VCC = 0.8 V - - 0.30 VCC V VCC = 0.9 V to 1.95 V - - 0.35 VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.1 - - V IO = 1.1 mA; VCC = 1.1 V 0.75 VCC - - V IO = 1.7 mA; VCC = 1.4 V 1.11 - - V Tamb = 25 C VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL IO = 1.9 mA; VCC = 1.65 V 1.32 - - V IO = 2.3 mA; VCC = 2.3 V 2.05 - - V IO = 3.1 mA; VCC = 2.3 V 1.9 - - V IO = 2.7 mA; VCC = 3.0 V 2.72 - - V IO = 4.0 mA; VCC = 3.0 V 2.6 - - V IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - VI = VIH or VIL 0.3 VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.31 V IO = 1.9 mA; VCC = 1.65 V - - 0.31 V IO = 2.3 mA; VCC = 2.3 V - - 0.31 V IO = 3.1 mA; VCC = 2.3 V - - 0.44 V IO = 2.7 mA; VCC = 3.0 V - - 0.31 V IO = 4.0 mA; VCC = 3.0 V - - 0.44 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.1 A IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.2 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.2 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.5 A ICC additional supply current VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V - - 40 A CI input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC - 0.8 - pF CO output capacitance VO = GND; VCC = 0 V - 1.7 - pF 74AUP2G00 Product data sheet [1] All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 6 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate Table 7. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC = 0.8 V 0.70 VCC - - V VCC = 0.9 V to 1.95 V 0.65 VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V - - 0.30 VCC V 0.35 VCC V Tamb = 40 C to +85 C VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V - - VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V VI = VIH or VIL IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.1 - - V IO = 1.1 mA; VCC = 1.1 V 0.7 VCC - - V IO = 1.7 mA; VCC = 1.4 V 1.03 - - V IO = 1.9 mA; VCC = 1.65 V 1.30 - - V IO = 2.3 mA; VCC = 2.3 V 1.97 - - V IO = 3.1 mA; VCC = 2.3 V 1.85 - - V IO = 2.7 mA; VCC = 3.0 V 2.67 - - V IO = 4.0 mA; VCC = 3.0 V 2.55 - - V IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - IO = 1.7 mA; VCC = 1.4 V - - VI = VIH or VIL 0.3 VCC V 0.37 V IO = 1.9 mA; VCC = 1.65 V - - 0.35 V IO = 2.3 mA; VCC = 2.3 V - - 0.33 V IO = 3.1 mA; VCC = 2.3 V - - 0.45 V IO = 2.7 mA; VCC = 3.0 V - - 0.33 V IO = 4.0 mA; VCC = 3.0 V - - 0.45 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.5 A IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.5 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.6 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.9 A ICC additional supply current VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V - - 50 A 74AUP2G00 Product data sheet [1] All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 7 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate Table 7. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC = 0.8 V 0.75 VCC - - V VCC = 0.9 V to 1.95 V 0.70 VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V - - 0.25 VCC V 0.30 VCC V Tamb = 40 C to +125 C HIGH-level input voltage VIH LOW-level input voltage VIL VOH HIGH-level output voltage LOW-level output voltage VOL VCC = 0.8 V VCC = 0.9 V to 1.95 V - - VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V VI = VIH or VIL IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.11 - - V IO = 1.1 mA; VCC = 1.1 V 0.6 VCC - - V IO = 1.7 mA; VCC = 1.4 V 0.93 - - V IO = 1.9 mA; VCC = 1.65 V 1.17 - - V IO = 2.3 mA; VCC = 2.3 V 1.77 - - V IO = 3.1 mA; VCC = 2.3 V 1.67 - - V IO = 2.7 mA; VCC = 3.0 V 2.40 - - V IO = 4.0 mA; VCC = 3.0 V 2.30 - - V IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.11 V IO = 1.1 mA; VCC = 1.1 V - - IO = 1.7 mA; VCC = 1.4 V - - VI = VIH or VIL 0.33 VCC V 0.41 V IO = 1.9 mA; VCC = 1.65 V - - 0.39 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V IO = 4.0 mA; VCC = 3.0 V - - 0.50 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.75 A IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.75 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.75 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 1.4 A ICC additional supply current VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V - - 75 A [1] [1] One input at VCC 0.6 V, other input at VCC or GND. 74AUP2G00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 8 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10. Symbol Parameter Tamb = 25 C Conditions Tamb = 40 C to +125 C Unit Min Typ[1] Max Min Max (85 C) Max (125 C) - 17.5 - - - - ns VCC = 1.1 V to 1.3 V 2.5 5.3 11.0 2.1 12.2 13.5 ns VCC = 1.4 V to 1.6 V 2.0 3.8 6.8 1.8 7.8 8.6 ns VCC = 1.65 V to 1.95 V 1.6 3.1 5.3 1.4 6.2 6.9 ns VCC = 2.3 V to 2.7 V 1.3 2.5 4.0 1.1 4.7 5.2 ns VCC = 3.0 V to 3.6 V 1.0 2.2 3.6 1.0 4.2 4.7 ns - 21.0 - - - - ns VCC = 1.1 V to 1.3 V 2.4 6.1 13.0 2.2 14.4 15.9 ns VCC = 1.4 V to 1.6 V 2.4 4.4 7.9 2.2 9.2 10.2 ns VCC = 1.65 V to 1.95 V 2.0 3.7 6.2 1.9 7.3 8.1 ns VCC = 2.3 V to 2.7 V 1.4 3.0 4.7 1.3 5.6 6.2 ns VCC = 3.0 V to 3.6 V 1.3 2.8 4.3 1.2 4.9 5.4 ns - 24.5 - - - - ns VCC = 1.1 V to 1.3 V 3.4 6.9 14.8 3.1 16.5 18.2 ns VCC = 1.4 V to 1.6 V 2.8 5.0 8.9 2.5 10.5 11.6 ns VCC = 1.65 V to 1.95 V 2.0 4.1 7.0 2.0 8.3 9.2 ns VCC = 2.3 V to 2.7 V 1.7 3.5 5.3 1.5 6.4 7.1 ns VCC = 3.0 V to 3.6 V 1.6 3.2 4.9 1.4 5.7 6.3 ns - 34.8 - - - - ns VCC = 1.1 V to 1.3 V 4.6 9.2 20.1 4.1 22.6 24.9 ns VCC = 1.4 V to 1.6 V 3.0 6.5 11.8 2.9 14.0 15.4 ns VCC = 1.65 V to 1.95 V 2.6 5.4 9.3 2.3 11.1 12.3 ns VCC = 2.3 V to 2.7 V 2.4 4.6 7.1 2.1 8.5 9.4 ns VCC = 3.0 V to 3.6 V 2.3 4.3 6.5 2.1 7.6 8.4 ns CL = 5 pF tpd propagation delay nA, nB to nY; see Figure 9 [2] VCC = 0.8 V CL = 10 pF tpd propagation delay nA, nB to nY; see Figure 9 [2] VCC = 0.8 V CL = 15 pF tpd propagation delay nA, nB to nY; see Figure 9 [2] VCC = 0.8 V CL = 30 pF tpd propagation delay nA, nB to nY; see Figure 9 VCC = 0.8 V 74AUP2G00 Product data sheet [2] All information provided in this document is subject to legal disclaimers. Rev. 9 -- 28 October 2016 (c) Nexperia B.V. 2017. All rights reserved 9 of 23 74AUP2G00 Nexperia Low-power dual 2-input NAND gate Table 8. Dynamic characteristics ...continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10. Symbol Parameter Tamb = 25 C Conditions Tamb = 40 C to +125 C Unit Min Typ[1] Max Min Max (85 C) Max (125 C) VCC = 0.8 V - 2.8 - - - - pF CL = 5 pF, 10 pF, 15 pF and 30 pF power dissipation capacitance CPD VCC = 1.1 V to 1.3 V - 2.9 - - - - pF VCC = 1.4 V to 1.6 V - 3.0 - - - - pF VCC = 1.65 V to 1.95 V - 3.0 - - - - pF VCC = 2.3 V to 2.7 V - 3.4 - - - - pF VCC = 3.0 V to 3.6 V - 3.9 - - - - pF [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] [3] fi = 1 MHz; VI = GND to VCC CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of the outputs. 12. Waveforms 9, 90 Q$Q%LQSXW *1' W 3+/ W 3/+ 92+ Q