V
RRM
= 100 V - 600 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol FR12B(R)05 FR12D(R)05 FR12G(R)05 Unit
Re
etitive
eak reverse
FR12J(R)05
• Types from 100 V to 600 V V
RRM
FR12B05 thru FR12JR05
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
2. Reverse polarity (R): Stud is anode.
voltage
RRM
RMS reverse voltage V
RMS
70 140 280 V
DC blocking voltage V
DC
100 200 400 V
Continuous forward current I
F
12 12 12 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol FR12B(R)05 FR12D(R)05 FR12G(R)05 Unit
Diode forward voltage 0.8 0.8 0.8
25 25 25 μA
666 mA
Recovery Time
Maximum reverse recovery
time T
RR
500 500 500 nS
Thermal characteristics
Thermal resistance, junction
- case R
thJC
2.0 2.0 2.0 °C/W
0.8
420
600
12
A180
-55 to 150
-55 to 150
FR12J(R)05
25
6
500
2.0
V
R
= 100 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
180 180
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
Reverse current I
R
V
F
I
F,SM
180
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
R
= 100 V, T
j
= 150 °
V
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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