2N2895
2N2896
2N2897
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2895, 2N2896,
and 2N2897 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N2895 2N2896 2N2897 UNITS
Collector-Base Voltage VCBO 120 140 60 V
Collector-Emitter Voltage VCER 80 140 60 V
Collector-Emitter Voltage VCEO 65 90 45 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 500 mW
Power Dissipation (TC=25°C) PD 1.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2895 2N2896 2N2897
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=60V - 2.0 - 10 - 50 nA
ICBO V
CB=60V, TA=150°C - 2.0 - - - 50 μA
ICBO V
CB=90V - - - 10 - - nA
ICBO V
CB=90V, TA=150°C - - - 10 - - μA
IEBO V
EB=5.0V - 5.0 - 10 - 50 nA
BVCBO IC=100μA 120 - 140 - 60 - V
BVCER IC=100mA, RBE=10Ω 80 - 140 - 60 - V
BVCEO IC=100mA 65 - 90 - 45 - V
BVEBO IE=100μA 7.0 - 7.0 - 7.0 - V
VCE(SAT) IC=150mA, IB=15mA - 0.6 - 0.6 - 1.0 V
VBE(SAT) IC=150mA, IB=15mA - 1.2 - 1.2 - 1.3 V
hFE VCE=10V, IC=10μA 10 - - - - -
hFE VCE=10V, IC=100μA 20 - - - - -
hFE VCE=10V, IC=1.0mA - - 35 - 35 -
hFE VCE=10V, IC=10mA 35 - - - - -
hFE VCE=10V, IC=10mA, TA=-55°C 20 - 20 - - -
hFE VCE=10V, IC=150mA 40 120 60 200 50 200
hFE VCE=10V, IC=500mA 25 - - - - -
TO-18 CASE
R0 (6-August 2013)
www.centralsemi.com
2N2895
2N2896
2N2897
SILICON
NPN TRANSISTORS
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N2895 2N2896 2N2897
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
fT V
CE=10V, IC=50mA, f=20MHz 120 - 120 - 100 - MHz
Cob V
CB=10V, IE=0, f=100kHz - 15 - 15 - 15 pF
Cib V
BE=0.5V, IC=0, f=100kHz - 80 - 80 - 80 pF
hfe V
CE=5.0V, IC=5.0mA, f=1.0kHz 50 200 50 275 50 275
NF VCE=10V, IC=0.3mA, RS=500Ω,
f=1.0kHz, BW=15kHz - 8.0 - - - - dB
www.centralsemi.com
R0 (6-August 2013)
2N2895
2N2896
2N2897
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R0 (6-August 2013)
www.centralsemi.com
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
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when ordering (example: 2N2222A PBFREE).
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