Apr.-11-'05
Apr.-11-'05
Apr.-11-'05
DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
2SK4006-01L,S,SJ
MS5F6095
MS5F6095
1/21
Power MOSFET
Apr.-11-2005
CHECKED
Fuji Electric DeviceTechnology Co.,Ltd.
MatsumotoFactory
Fuji Electric Device TechnologyCo.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
H04-004-03
MS5F6095
2/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Apr.-11
2005
DWG.NO.
H04-004-03
MS5F6095
3/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
1.Scope This specifies Fuji Power MOSFET 2SK4006-01L,S,SJ
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview T-Pack L Outview See to 8/21 page
T-Pack S Outview See to 9/21 page
T-Pack SJ Outview See to 10/21 page
5.Absolute Maximum Ratings at Tc=25C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 900 V
VDSX 900 V VGS=-30V
Continuous Drain Current IDA
Pulsed Drain Current IDP ± 36 A
Gate-Source Voltage VGS ± 30 V
IAR 9 A
EAS mJ
EAR mJ
Maximum Drain-Source dV/dt dVDS/dt kV/
s
Peak Diode Recovery dV/dt dV/dt kV/
s
Tc=25°C
1.67 Ta=25°C
Operating and Storage Tch 150 °C
Temperature range Tstg -55 to +150 °C
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250
A
Breakdown Voltage BVDSS VGS=0V 900 - - V
Gate Threshold ID=250
A
Voltage VGS(th) VDS=VGS 3.0 - 5.0 V
Zero Gate Voltage VDS=900V
VGS=0V Tch=25°C - - 25
Drain Current IDSS VDS=720V
VGS=0V Tch=125°C - - 250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V - 10 100 nA
Drain-Source ID=4.5A
On-State Resistance RDS(on) VGS=10V - 1.22 1.58
Repetitive
Maximum Avalanche Energy 27.0 Note *3
40 VDS
900V
719.1 Note *2
5 Note *4
9
Drain-Source Voltage
A
Maximum Power Dissipation PD270 W
Repetitive and Non-repetitive
Maximum Avalanche Current Note *1
Non-Repetitive
Maximum Avalanche Energy
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FujiElectricDeviceTechnologyCo.,Ltd.
Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=4.5A
Transconductance gfs VDS=25V 5.0 10 - S
Input Capacitance Ciss VDS=25V - 1100 1650
Output Capacitance Coss VGS=0V - 140 210
Reverse Transfer f=1MHz 8.0 12 pF
Capacitance Crss -
td(on) Vcc=600V - 25 38
Turn-On Time tr VGS=10V - 12 18
td(off) ID=4.5A - 50 75 ns
Turn-Off Time tf RGS=10- 12 18
Total Gate Charge QGVcc=450V - 31.0 46.5
Gate-Source Charge QGS ID=9A - 4.5 8.0 nC
Gate-Drain Charge QGD VGS=10V - 11.0 16.5
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Diode Forward IF=9A
On-Voltage VSD VGS=0V Tch=25C - 0.90 1.50 V
Reverse Recovery IF=9A
Time trr VGS=0V - 3.2 -
s
Reverse Recovery -di/dt=100A/
s
Charge Qrr Tch=25C - 15.5 - C
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.463 C/W
Channel to Ambient Rth(ch-a) 75
C/W
Note *1 : Tch
150
C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25
C,IAS=3.6A,L=102mH,Vcc=90V,RG=50
,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 20/21.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 21/21.
Note *4 : IF
-ID,-di/dt=50A/
s,Vcc
BVDSS,Tch
150
C
DWG.NO.
H04-004-03
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
Test items required without fail
.
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering
Through Hole Package (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
SMD Package(IR-ray Reflow ,255±5°C(260°Cmax.),10±1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL : 45N method 401
(Through Hole) T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL : 15N method 401
(Through Hole) T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength
TO-220,TO-220F : 40±10N
・
cm
ED4701/400
TO-3P,TO-3PF,TO-247 : 50±10N
・
cm
method 402
(Through Hole)
TO-3PL : 70±10N
・
cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s
2
ED4701/400
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s
2
EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 245±5°C
Immersion time : 5±0.5sec
About Through Hole Package type, ----- 15
each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 260±5°C EIAJ
Soldering Heat Immersion time : 10±1sec ED4701/300 15
(Through Hole) Number of times : 1times method 302
Resistance to Solder temp. : 255
5
CEIAJ 15
Soldering Heat Immersion time : 10±1sec ED4701/400
(SMD Type) Number of times : 2times method 301
IR-ray Reflowing
Mechanical test methods
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outvie
w
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 201
2 Low Temp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) * 0.8 method 103
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration : 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C 〜35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating Tch≦Tch(max.) ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max)*0.8 ED4701/100 22
Test duration : 1000hr method 101
Climatic test methodsEndurance test methods
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
PRE‑SOLDER
See Note: 1.
Trademark
Lot No.
Type name
Note: 1. Guaranteed mark of avalanche ruggedness.
CONNECTION
GATE
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
JEDEC : TO‑220AB
FUJI POWER MOS FET
1 2 3
1 2 3 1
2
3
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
DWG.NO.
H04-004-03
MS5F6095
10/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
DWG.NO.
H04-004-03
MS5F6095
11/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
9. Cautions
･Although Fuji Electric Device Technology is continually improving product quality and reliability, a small
percentage of semiconductor products may becomefaulty. Whenusing FujiElectric Device Technology
semiconductor products in your equipment, youare requested to take adequate safety measures to
prevent the equipment from causing physical injury, fire, or otherproblemincase any of the products fail. It
is recommended to make your designfail-safe, flame retardant, and free of malfunction.
･The products described inthis Specificationare intended foruse inthe followingelectronic and electrical
equipment whichhas normalreliability requirements.
･Computers ･OA equipment ･Communications equipment (Terminal devices)
･Machinetools ･AV equipment ･Measurement equipment
･Personal equipment ･Industrialrobots ･Electrical homeappliances etc.
･The products described inthis Specificationarenot designed or manufactured to be used in equipment or
systems used under life-threatening situations. If you are considering using these products inthe equip-
ment listed below,first check the system construction and required reliability, and take adequate safety
measures suchas abackup system to prevent the equipment from malfunctioning.
･Backbone networkequipment ･Transportation equipment (automobiles, trains, ships, etc.)
･Traffic-signal controlequipment ･Gas alarms, leakage gas auto breakers
･Submarine repeater equipment ･Burglar alarms, fire alarms, emergency equipment
･Medicalequipment ･Nuclearcontrol equipment etc.
･Do not use the products in thisSpecificationfor equipment requiring strict reliability suchas(but not limited
to):
･Aerospace equipment ･Aeronautical equipment
10.Warnings
･The MOSFETs should beused inproducts withintheir absolutemaximum rating(voltage, current, tempera-
ture, etc.).
･The MOSFETs may be destroyed if used beyond therating.
･We only guarantee the non-repetitive Avalanche capability and not forthe continuous Avalanche capability
whichcanbeassumed as abnormalcondition .Pleasenote the device may be destructed from the Ava-
lancheover the specified maximum rating.
･The equipment containing MOSFETs should have adequate fuses orcircuit breakers to prevent the equip-
ment from causing secondary destruction(fire, explosionetc...).
･Use the MOSFETs withintheir reliability and lifetime under certainenvironments or conditions.The
MOSFETs may failbefore the targetlifetime of yourproducts if usedundercertain reliability conditions.
･Be carefulwhenhandling MOSFETsfor ESD damage. (It is an important consideration)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･It isrecommended that any handling of MOSFETs is done ongrounded electrically conductive floor or
tablemats.
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
･Before touching aMOSFET terminal, discharge any static electricityfrom your bodyand clothes by
grounding out through a high impedance resistor (about 1M)
･When soldering,inorder to protect the MOSFETs from staticelectricity,ground the soldering ironor
soldering baththrougha lowimpedance resistor.
･Youmust designthe MOSFETs to be operatedwithinthe specified maximum ratings(voltage, current,
temperature, etc.) to prevent possible failure or destructionof devices.
･Consider the possible temperature rise not only for the channeland case, but also for the outer leads.
･Do not directly touch the leadsor package of the MOSFETs whilepoweris suppliedor duringoperation
in order to avoid electric shockand burns.
･The MOSFETsaremadeof incombustible material.However, if aMOSFET fails,it mayemitsmokeor
flame. MOSFETs becomehotterduring operation. Hence, operating the MOSFETs near any flammable
place or material isunadvisable. Designthe arrangement to prevent the spread of fire.
･The MOSFETs should not used in an environment in thepresence of acid, organic matter, orcorrosive
gas(hydrogensulfide, sulfurous acid gas etc.)
･The MOSFETsshould not used inan irradiated environment since they are not radiation-proof.
Installation /Through-Hole Package
･Soldering involves temperatures whichexceed the device storagetemperaturerating.To avoiddevice
damage andto ensurereliability, observe the following guidelines from the quality assurance standard.
･The immersiondepthof the leadshould basically be up to the lead stopper and thedistance shouldbe a
maximumof 1.5mmfrom the device.
･When flow-soldering, be carefulto avoidimmersing thepackage inthe solder bath.
Soldering temperature and duration (through-hole package)
Solder temperature Immersion time
2605C 101 seconds
35010 C 3.50.5 seconds
Solderingmethods(through-holepackage) Methods
Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Onlyterminal)
Infrared
Reflow Air
Reflow Soldering
iron
(Re-work)
TO-3PL × ◎ × × ○
TO-3P × ◎ × × ○
TO-247 × ◎ × × ○
TO-3PF × ◎ × × ○
TO-220 × ◎ × × ○
TO-220F × ◎ × × ○
T-Pack(L) × ◎ × × ○
TO-3PL-7 × ◎ × × ○
◎：Possible ○：Limitedto1 time ×：Unable
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
･Refer to the following torque reference when mounting thedevice ona heat sink. Excess torque applied to
the mounting screwcauses damage to the device and weak torque will increasethe thermalresistance,
bothof whichconditions may destroy thedevice.
Table 1:Recommended tightening torques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 30–50 Ncm
TO-3P
TO-3PF
TO-247 M3 40–60 Ncm
TO-3PL M3 60–80Ncm
flatness:<±30
m
roughness:<10m
Planeoffthe edges :
C<1.0mm
･The heat sink should have a flatness within±30m and roughness within 10m. Also, keep the tightening
torque within thelimits of this specification.
･Improper handling may causeisolation breakdownleading to a critical accident.
ex.) Over planeoff the edgesof screw hole. (Recommendedplane off the edge isC<1.0mm)
･We recommend theuse of thermalcompoundto optimizetheefficiency of heatradiation. It isimportant to
evenly apply thecompound and to eliminate any airvoids.
Installation/ SMD Package
･Soldering involves temperatures whichexceed the device storagetemperaturerating.To avoiddevice
damage andto ensurereliability, observe the following guidelines from the quality assurance standard.
Soldering temperature and duration (SMD Package)
Reflow-Soldering
Number of times Twice
Soldering Temp. &
Time 230℃，50sec
Package surface
Peak Temp. & Time 260℃，10sec
Soldering methods (SMD Package) Methods
Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Only terminal)
Infrared
Reflow Air
Reflow
Soldering
iron
(Re-work)
T-Pack(S) ××◎◎×
T-Pack(SJ) ××◎◎×
K-Pack(S) ××◎◎×
TFP ××◎◎×
◎：Possible ○：Limited to 1 time ×：Unable
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
Storage
･The MOSFETs mustbe storedata standardtemperature of 5 to 35°C and relative humidity of 45 to 75%.
･If the storage area is very dry, a humidifiermay be required. Insucha case, use only deionized water or
boiled water, sincethe chlorineintap water may corrode the leads.
･The MOSFETs should not be subjected to rapid changes in temperatureto avoid condensation onthe
surfaceof the MOSFETs.Therefore storethe MOSFETs ina place wherethe temperature issteady.
･The MOSFETs should notbestored ontopof each other, since this maycauseexcessive externalforce
onthe case.
･The MOSFETsshould be storedwiththelead terminals remaining unprocessed. Rust may cause
presoldered connections to fail during later processing.
･The MOSFETs should be stored inantistatic containers or shipping bags.
11.Appendix
・Thisproduct doesnotcontain PBBs(Polybrominated Biphenyl), PBDEs(PolybrominatedDiphenyl Ether) ,
Mercury Compounds, Cadmium Compounds,Hexavalent Chromium Conpounds, Lead Compounds(but
inner solder), substances.
・Thisproductdoes notcontainClass-Ⅰand Class-ⅡODS substances set forceby CleanAirActof US'law.
･If youhave anyquestionsabout anypart of thisSpesification, please contactFuji ElectricDevice
Technologyor itssales agent before usingthe product.
･Neither Fujinor its agents shallbe held liable for anyinjury causedby using the products not in
accordance withthe instructions.
･The applicationexamples describedinthis specificationaremerely typical usesof Fuji Electric
DeviceTechnology products.
RecommendedReflowprofile
0
50
100
150
200
250
300
冷却/Post Cooling
-5℃/sec(max.)
4.5℃/sec(max.)
260℃(peak)
≦10sec
≧230℃
50sec(max.)
6℃/sec(max.)
予熱/Pre-heat
150〜180℃
60〜120sec
温度/Temperature [℃]
時間/time [sec]
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
0 5 10 15 20
0
2
4
6
8
10
12
14
20V
7.0V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25C
VGS=5.5V
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
0.1 1 10
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
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0 2 4 6 8 10 12 14
1.1
1.2
1.3
1.4
1.5
1.6
1.7
7.0V
6.5V
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25C
10V
20V
8.0V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
GateThreshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch [C]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25C
VGS [V]
720V
450V
Vcc= 180V
DWG.NO.
H04-004-03
MS5F6095
19/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
100101102
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25C
DWG.NO.
H04-004-03
MS5F6095
20/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700 IAS=4A
IAS=9A
IAS=6A
EAS [mJ]
starting Tch [C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
DWG.NO.
H04-004-03
MS5F6095
21/21
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=90V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]