2MBI300K-060 - Fuji Electric

2MBI300UE-120 1200V / 300A 2 in one-package

Features

· High speed switching

· Voltage drive

· Low inductance module structure

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*3

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

ton

tr(j)

toff

(terminal)

(chip)

trr

R lead

– – 3.0

– – 600

4.5 6.5 8.5

– 1.95 2.30

– 2.20 –

– 1.75 2.10

– 2.00 –

– 34 –

– 0.36 1.20

– 0.21 0.60

– 0.03 –

– 0.37 1.00

– 0.07 0.30

– 1.75 2.05

– 1.85 –

– 1.60 1.90

– 1.70 –

– – 0.35

– 0.45 –

VGE=0V, VCE=1200V

VCE=0V, V GE=±20V

VCE=20V, IC=300mA

VGE=15V, IC=300A

VCE=10V, VGE=0V, f=1MHz

VCC=600V

IC=300A

VGE=±15V

RG=2.0 Ω

VGE=0V

IF=300A

µs

mΩ

Electrical characteristics (at Tj=25°C unless otherwise specified)

Thermal resistance characteristics

Thermal resistance

Contact Thermal resistance

– – 0.075

– – 0.12

– 0.0167 –

IGBT

FWD

With thermal compound

°C/W

Equivalent Circuit Schematic

*1 : All terminals should be connected together when isolation test will be done.

*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)

Symbols C on ditions Characteristics Unit

Min. Typ. Max.

Rth(j-c)

Rth(c-f)*4

IGBT Module U-Series

*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

G1 E1 G2 E2

C2E1

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

*3:Biggest internal terminal resistance among arm.

Items Symbols Conditions Characteristics Unit

Min. Typ. Max.

Item Symbol

Collector-Emitter voltage VCES

Gate-Emitter voltaga VGES

Collector current IC

ICp

-IC

-IC pulse

Collector Power Dissipation PC

Junction temperature Tj

Storage temperature Tstg

Isolation voltage between terminal and copper base *1 Viso

Screw Torque Mounting *2

Terminals *2

Rating

1200

±20

450

300

900

600

300

600

1660

+150

-40 to +125

2500

3.5

4.5

Unit

°C

VAC

N·m

Conditions

Continuous

1ms

1 device

AC:1min.

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

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2MBI300UE-120 IGBT Module

Characteristics (Representative)

VGE=0V, f= 1M Hz , T j= 25°C Vc c =600V, Ic =300A , T j= 25°C

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

200

400

600

800

0.0 1.0 2.0 3.0 4.0 5.0

Collector current : Ic [A]

Collect or-Emit t er volt age : VCE [V]

VGE=2 0 V 15V 12V

10V

200

400

600

800

0.0 1.0 2.0 3.0 4.0 5.0

Collector current : Ic [A]

Collect or-Emit t er volt age : VCE [V]

VGE=2 0 V 15V 12V

10V

200

400

600

800

0.0 1.0 2.0 3.0 4.0

Collector current : Ic [A]

Collect or-Emit t er volt age : VCE [V]

Tj=125°C

Tj=25°C

0.0

2.0

4.0

6.0

8.0

10.0

5.0 10.0 15.0 20.0 25.0

Collector - Emitter voltage : VCE [ V ]

Gat e - Em it t e r v olt age : VGE [ V ]

Ic=600A

Ic=300A

Ic=150A

0.1

1.0

10.0

100.0

0.0 10.0 20.0 30.0

Capacitance : Cies, Coes, Cres [ nF ]

Collect or-Emit t er volt age : VCE [V]

Cies

Coes

Cres

0 200 400 600 800 1000 1200 1400 1600

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE [ 5V/div ]

Gat e ch ar ge : Qg [ nC ]

VGE

VCE

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2MBI300UE-120 IGBT Module

Vcc=600V, Ic=300A, VG E=±15V, T j= 125°C

Reverse bias safe operating area (max.)Switching loss vs. Gat e resistance (ty p .)

+VGE=15V,-VGE <= 15V, RG >= 2 Ω ,Tj <= 125°C

Switching time vs. Collector current (ty p .)

Vcc=600V, VGE=±15V, Rg=2Ω, Tj= 25°C

Vcc=600V, Ic=300A, VG E=±15V, Tj= 25°C

Switching time vs. Collector current (ty p .)

Vcc=600V, VGE=±15V, Rg=2Ω, Tj=125°C

Switching time vs. Gat e resist ance (ty p .) Switching loss vs. Collector current (t y p .)

Vcc=600V, VGE=±15V, Rg=2Ω

100

1000

10000

0 100 200 300 400 500 600

Switching time : ton, tr, toff, tf [ nsec ]

Collect or current : Ic [ A ]

ton

toff

100

1000

10000

0 100 200 300 400 500 600

Switching time : ton, tr, toff, tf [ nsec ]

Collect or current : Ic [ A ]

toff

ton

100

1000

10000

0.1 1.0 10.0 100.0

Switching time : ton, tr, toff, tf [ nsec ]

Gat e re sist a n c e : Rg [ Ω ]

toff

ton

0.0

10.0

20.0

30.0

40.0

50.0

60.0

0 100 200 300 400 500 600

Switchin

loss : Eon, Eoff, Err [ mJ/

ulse ]

Collect or current : Ic [ A ]

Eon(125°C)

Eon(25°C)

Eoff(125°C)

Err(125°C)

Err(25°C)

Eoff(25°C)

0.0

50.0

100.0

150.0

200.0

250.0

0.1 1.0 10.0 100.0

Switchin

loss : Eon, Eoff, Err [ mJ/

ulse ]

Gat e re si st an ce : Rg [ Ω ]

Eoff

Err

Eon

200

400

600

800

0 200 400 600 800 1000 1200

Collector current : Ic [ A ]

Collect or - Emit t er volt age : VCE [ V ]

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2MBI300UE-120 IGBT Module

Outline Drawings, mm

Transient thermal resistance (max.)

Reverse recovery characteristics (ty p.)

Vcc=V, VGE=±15V, Rg=2Ω

Forward current vs. Forward on voltage (typ.)

chip

100

200

300

400

500

600

700

800

0.00 1.00 2.00 3.00 4.00

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

Tj=125°C

Tj=25°C

100

1000

0 100 200 300 400 500 600

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

Forward current : IF [ A ]

trr (125°C)

Irr (125°C)

Irr (25°C)

trr (25°C)

0.001

0.010

0.100

1.000

0.001 0.010 0.100 1.000

Thermal resistanse : Rth(j-c) [ °C/W ]

Pulse width : Pw [ sec ]

FWD

IGBT

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