2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
ADE-208-1304 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1636(L), 2SK1636(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID15 A
Drain peak current ID(pulse)*160 A
Body to drain diode reverse drain current IDR 15 A
Channel dissipation Pch*275 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2SK1636(L), 2SK1636(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static Drain to source on state
resistance RDS(on) — 0.22 0.27 ID = 8 A, VGS = 10 V *1
Forward transfer admittance |yfs| 6.0 10.0 — S ID = 8 A, VDS = 10 V *1
Input capacitance Ciss — 1250 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 510 — pF f = 1 MHz
Reverse transfer capacitance Crss — 85 — pF
Turn-on delay time td(on) — 24 — ns ID = 8 A, VGS = 10 V,
Rise time tr— 85 — ns RL = 3.75
Turn-off delay time td(off) — 110 — ns
Fall time tf—60—ns
Body to drain diode forward
voltage VDF — 1.0 — V IF = 15 A, VGS = 0
Body to drain diode reverse
recovery time trr — 400 — ns IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
2SK1636(L), 2SK1636(S)
4
120
80
40
0 50 100 150
Case Temperature TC (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating 100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
1
30
10
3
1
0.3
0.1 3 1,00030010010 30
100 µs
1 ms
DC Operation (T
C
= 25°C)
PW = 10 ms (1 Shot)
10 µs
Ta = 25°C
Operation in this area
is limited by R
DS (on)
20
820
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
16
4
412160
8
12
Drain Current ID (A)
VGS = 3.5 V
4.5 V
5 V
4 V
5.5 V
Pulse Test
10 V 8 V 20
410
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
16
4
2680
8
12
Drain Current ID (A)
VDS = 10 V
Pulse Test
Ta = 75°C
25°C
–25°C
2SK1636(L), 2SK1636(S)
5
10
410
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
8
2
2680
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
ID = 15 A
10 A
5 A
Pulse Test 5
100
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
1
Static Drain to Source on State
Resistance vs. Drain Current
2
1
0.5
0.2
0.1
0.05 2 5 10 20 50
VGS = 10 V
Pulse Test
15 V
1.0
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
0.8
0.2
0 80 120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
VGS = 10 V
ID = 15 A 10 A
5 A
50
50
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
0.5
20
10
5
2
1
0.5
Drain Current ID (A)
12 51020
V
DS = 10 V
Pulse Test
TC = –25°C
25°C
75°C
2SK1636(L), 2SK1636(S)
6
1,000
50
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.5
200
100
20
10 12 51020
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
500
50
10,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
500
40 100
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
400
100
20 60 800
200
300
20
16
4
0
8
12
Gate to Source Voltage VGS (V)
VDD = 50 V
100 V
200 V
VDD = 200 V
100 V
50 V
ID = 15 A
VGS
VDS
500
20
Drain Current ID (A)
Switching Time t (ns)
0.2
Switching Characteristics
200
100
50
20
10
50.5 2 5110
V
GS = 10 V, PW = 2 µs
duty < 1%
td (off)
tf
td (on)
tr
2SK1636(L), 2SK1636(S)
7
20
0.8 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
16
0.4 1.2 1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
Pulse Test
VGS = 10 V
VGS = 0, –5 V
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance γS (t)
1.0
0.1
0.3
10 µ
0.03
0.01 100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
PDM
D = T
PW
θch–c (t) = γS (t) · θch–c
θch–c = 1.67°C/W, TC = 25°C
T
TC = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Switching Time Test Circuit
Vin Monitor
Vout Monitor
RL
VDD
30 V
D.U.T
50 Ω
Vin
10 V =
..
Vout
Waveforms
td (on)
10%
10%
90% 90%
10%
90%
Vin
trtd (off) tf
2SK1636(L), 2SK1636(S)
8
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK1636(L), 2SK1636(S)
9
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1636(L), 2SK1636(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1636(L), 2SK1636(S)
11
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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