To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit / 2-Mword x 8-bit) REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword x 16-bit / 2-Mword x 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features * Single 3.0 V supply: 2.7 V to 3.6 V * Fast access time: 45/55 ns (max) * Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 W (typ) * Completely static memory. No clock or timing strobe required * Equal access and cycle times * Common data input and output. Three state output * Battery backup operation. 2 chip selection for battery backup * Temperature range: -40 to +85C * Byte function (x8 mode) available by BYTE# & A-1. Rev.1.01, Nov.18.2004, page 1 of 19 R1LV1616H-I Series Ordering Information Type No. Access time Package R1LV1616HSA-4LI 45 ns 48-pin plastic TSOPI (48P3R-B) R1LV1616HSA-4SI 45 ns R1LV1616HSA-5SI 55 ns Rev.1.01, Nov.18.2004, page 2 of 19 R1LV1616H-I Series Pin Arrangement 48-pin TSOP A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# CS2 NU UB# LB# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 (Top view) Rev.1.01, Nov.18.2004, page 3 of 19 A16 BYTE# VSS I/O15/A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE# VSS CS1# A0 R1LV1616H-I Series Pin Description (TSOP) Pin name Function A0 to A19 Address input (word mode) A-1 to A19 Address input (byte mode) I/O0 to I/O15 Data input/output CS1# (CS1) Chip select 1 CS2 Chip select 2 WE# (WE) Write enable OE# (OE) Output enable LB# (LB) Lower byte select UB# (UB) Upper byte select BYTE# (BYTE) Byte enable VCC Power supply VSS Ground NC No connection 1 NU* Not used (test mode pin) Note: 1. This pin should be connected to a ground (VSS), or not be connected (open). Rev.1.01, Nov.18.2004, page 4 of 19 R1LV1616H-I Series Block Diagram (TSOP) LSB A15 A14 V CC A13 V SS A12 A11 A10 A9 A8 Memory matrix 8,192 x 128 x 16 * * * * * Row decoder A18 8,192 x 256 x 8 A16 A19 A4 MSB A5 I/O0 Column I/O * * Input data control Column decoder I/O15 MSBA17 A7A6 A3 A2 A1A0 A-1 LSB * * BYTE# CS2 CS1# LB# UB# WE# OE# Rev.1.01, Nov.18.2004, page 5 of 19 Control logic * * R1LV1616H-I Series Operation Table (TSOP) Byte mode CS1# CS2 WE# OE# UB# LB# BYTE# I/O0 to I/O7 I/O8 to I/O14 I/O15 Operation H x x x x x L High-Z High-Z High-Z Standby x L x x x x L High-Z High-Z High-Z Standby L H H L x x L Dout High-Z A-1 Read L H L x x x L Din High-Z A-1 Write L H H H x x L High-Z High-Z High-Z Output disable Note: H: VIH, L: VIL, x: VIH or VIL Word mode CS1# CS2 WE# OE# UB# LB# BYTE# I/O0 to I/O7 I/O8 to I/O14 I/O15 Operation H x x x x x H High-Z High-Z High-Z Standby x L x x x x H High-Z High-Z High-Z Standby x x x x H H H High-Z High-Z High-Z Standby L H H L L L H Dout Dout Dout Read L H H L H L H Dout High-Z High-Z Lower byte read L H H L L H H High-Z Dout Dout Upper byte read L H L x L L H Din Din Din Write L H L x H L H Din High-Z High-Z Lower byte write L H L x L H H High-Z Din Din Upper byte write L H H H x x H High-Z High-Z High-Z Output disable Note: H: VIH, L: VIL, x: VIH or VIL Rev.1.01, Nov.18.2004, page 6 of 19 R1LV1616H-I Series Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to VSS VCC -0.5 to +4.6 V Terminal voltage on any pin relative to VSS VT -0.5*1 to VCC + 0.3*2 V Power dissipation PT 1.0 W Storage temperature range Tstg -55 to +125 C Storage temperature range under bias Tbias -40 to +85 C Notes: 1. VT min: -2.0 V for pulse half-width 10 ns. 2. Maximum voltage is +4.6 V. DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.6 V VSS 0 0 0 V Input high voltage VIH 2.2 VCC + 0.3 V Input low voltage VIL -0.3 0.6 V Ambient temperature range Ta -40 +85 C Note: 1. VIL min: -2.0 V for pulse half-width 10 ns. Rev.1.01, Nov.18.2004, page 7 of 19 Note 1 R1LV1616H-I Series DC Characteristics Parameter Symbol Min Input leakage current |ILI| Output leakage current |ILO| Operating current ICC Average operating current Max Unit 1 A Vin = VSS to VCC 1 A CS1# = VIH or CS2 = VIL or OE# = VIH or WE# = VIL or LB# = UB# = VIH, VI/O = VSS to VCC 20 mA CS1# = VIL, CS2 = VIH, Others = VIH/ VIL, II/O = 0 mA ICC1 (READ) 22*1 35 mA Min. cycle, duty = 100%, II/O = 0 mA, CS1# = VIL, CS2 = VIH, WE# = VIH, Others = VIH/VIL 30*1 50 mA Min. cycle, duty = 100%, II/O = 0 mA, CS1# = VIL, CS2 = VIH, Others = VIH/VIL ICC2*3 (READ) 3*1 8 mA Cycle time = 70 ns, duty = 100%, II/O = 0 mA, CS1# = VIL, CS2 = VIH, WE# = VIH, Others = VIH/VIL Address increment scan or decrement scan ICC2*3 20*1 30 mA Cycle time = 70 ns, duty = 100%, II/O = 0 mA, CS1# = VIL, CS2 = VIH, Others = VIH/VIL Address increment scan or decrement scan ICC3 3*1 8 mA Cycle time = 1 s, duty = 100%, II/O = 0 mA, CS1# 0.2 V, CS2 VCC - 0.2 V VIH VCC - 0.2 V, VIL 0.2 V ISB 0.1*1 0.5 mA CS2 = VIL 1 0 V Vin (1) 0 V CS2 0.2 V or (2) CS1# VCC - 0.2 V, CS2 VCC - 0.2 V or (3) LB# = UB# VCC - 0.2 V, CS2 VCC - 0.2 V, CS1# 0.2 V Average value ICC1 Standby current Standby current Test conditions*2 Typ -4SI -5SI ISB1 0.5* 8 A -4LI ISB1 0.5*1 25 A VOH 2.4 V IOH = -1 mA VOH VCC - 0.2 V IOH = -100 A VOL 0.4 V IOL = 2 mA VOL 0.2 V IOL = 100 A Output high voltage Output low voltage Rev.1.01, Nov.18.2004, page 8 of 19 R1LV1616H-I Series Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25C and not guaranteed. 2. BYTE# VCC - 0.2 V or BYTE# 0.2 V 3. ICC2 is the value measured while the valid address is increasing or decreasing by one bit. Word mode: LSB (least significant bit) is A0. Byte mode: LSB (least significant bit) is A-1. Capacitance (Ta = +25C, f = 1.0 MHz) Parameter Symbol Min Typ Max Unit Test conditions Note Input capacitance Cin 8 pF Vin = 0 V 1 Input/output capacitance CI/O 10 pF VI/O = 0 V 1 Note: 1. This parameter is sampled and not 100% tested. Rev.1.01, Nov.18.2004, page 9 of 19 R1LV1616H-I Series AC Characteristics (Ta = -40 to +85C, VCC = 2.7 V to 3.6 V, unless otherwise noted.) Test Conditions * * * * Input pulse levels: VIL = 0.4 V, VIH = 2.4 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.4 V Output load: See figures (Including scope and jig) 1.4 V RL=500 Dout 50pF Rev.1.01, Nov.18.2004, page 10 of 19 R1LV1616H-I Series Read Cycle R1LV1616H-I -4SI, -4LI -5SI Parameter Symbol Min Max Min Max Unit Notes Read cycle time tRC 45 55 ns Address access time tAA 45 55 ns Chip select access time tACS1 45 55 ns tACS2 45 55 ns Output enable to output valid tOE 30 35 ns Output hold from address change tOH 10 10 ns LB#, UB# access time tBA 45 55 ns Chip select to output in low-Z tCLZ1 10 10 ns 2, 3 tCLZ2 10 10 ns 2, 3 LB#, UB# enable to low-Z tBLZ 5 5 ns 2, 3 Output enable to output in low-Z tOLZ 5 5 ns 2, 3 Chip deselect to output in high-Z tCHZ1 0 20 0 20 ns 1, 2, 3 tCHZ2 0 20 0 20 ns 1, 2, 3 LB#, UB# disable to high-Z tBHZ 0 15 0 20 ns 1, 2, 3 Output disable to output in high-Z tOHZ 0 15 0 20 ns 1, 2, 3 Notes Write Cycle R1LV1616H-I -4SI, -4LI -5SI Parameter Symbol Min Max Min Max Unit Write cycle time tWC 45 55 ns Address valid to end of write tAW 45 50 ns Chip selection to end of write tCW 45 50 ns 5 Write pulse width tWP 35 40 ns 4 LB#, UB# valid to end of write tBW 45 50 ns Address setup time tAS 0 0 ns 6 Write recovery time tWR 0 0 ns 7 Data to write time overlap tDW 25 25 ns Data hold from write time tDH 0 0 ns Output active from end of write tOW 5 5 ns 2 Output disable to output in high-Z tOHZ 0 15 0 20 ns 1, 2 Write to output in high-Z tWHZ 0 15 0 20 ns 1, 2 Rev.1.01, Nov.18.2004, page 11 of 19 R1LV1616H-I Series Byte Control R1LV1616H-I -4SI, -4LI -5SI Parameter Symbol Min Max Min Max Unit BYTE# setup time tBS 5 5 ms BYTE# recovery time tBR 5 5 ms Notes Notes: 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and from device to device. 4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to the end of write. 6. tAS is measured from the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle. Rev.1.01, Nov.18.2004, page 12 of 19 R1LV1616H-I Series Timing Waveform Read Cycle*1 t RC Address*2 Valid address tAA tACS1 CS1# tCLZ1 CS2 tCHZ1 tACS2 tCLZ2 tCHZ2 tBHZ tBA LB#, UB# tBLZ tOHZ tOE OE# tOLZ Dout*3 High impedance Notes: 1. BYTE# > VCC - 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, Nov.18.2004, page 13 of 19 tOH Valid data R1LV1616H-I Series Write Cycle (1)*1 (WE# Clock) tWC Valid address Address*2 tWR tCW CS1# tCW CS2 tBW LB#, UB# tAW tWP WE# tAS tDW tDH Valid data Din*3 tWHZ tOW High impedance Dout*3 Notes: 1. BYTE# > VCC - 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, Nov.18.2004, page 14 of 19 R1LV1616H-I Series Write Cycle (2)*1 (CS1#, CS2 Clock, OE# = VIH) tWC Valid address Address*2 tAW tAS tCW tAS tCW tWR CS1# CS2 tBW LB#, UB# tWP WE# tDW Din*3 Dout*3 Notes: 1. BYTE# > VCC - 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, Nov.18.2004, page 15 of 19 Valid data High impedance tDH R1LV1616H-I Series Write Cycle (3)*1 (LB#, UB# Clock, OE# = VIH) tWC Valid address Address tAW tCW tWR CS1# tCW CS2 tAS tBW UB# (LB#) tBW LB# (UB#) tWP WE# tDW Din-UB (Din-LB) Din-LB (Din-UB) Dout Note: 1. BYTE# > VCC - 0.2 V Rev.1.01, Nov.18.2004, page 16 of 19 tDH Valid data tDW Valid data High impedance tDH R1LV1616H-I Series Byte Control (TSOP) CS2 CS1# tBS BYTE# Rev.1.01, Nov.18.2004, page 17 of 19 tBR R1LV1616H-I Series Low VCC Data Retention Characteristics (Ta = -40 to +85C) Parameter Symbol Min Typ Max Unit Test conditions*2, 3 VCC for data retention VDR 1.5 3.6 V Vin 0 V (1) 0 V CS2 0.2 V or (2) CS2 VCC - 0.2 V, CS1# VCC - 0.2 V or (3) LB# = UB# VCC - 0.2 V, CS2 VCC - 0.2 V, CS1# 0.2 V Data retention current -4SI -5SI ICCDR 0.5*1 8 A -4LI ICCDR 0.5*1 25 A VCC = 3.0 V, Vin 0 V (1) 0 V CS2 0.2 V or (2) CS2 VCC - 0.2 V, CS1# VCC - 0.2 V or (3) LB# = UB# VCC - 0.2 V, CS2 VCC - 0.2 V, CS1# 0.2 V Average value Chip deselect to data retention time tCDR 0 ns Operation recovery time tR 5 ms See retention waveforms Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25C and not guaranteed. 2. BYTE# VCC - 0.2 V or BYTE# 0.2 V 3. CS2 controls address buffer, WE# buffer, CS1# buffer, OE# buffer, LB#, UB# buffer and Din buffer. If CS2 controls data retention mode, Vin levels (address, WE#, OE#, CS1#, LB#, UB#, I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be CS2 VCC - 0.2 V or 0 V CS2 0.2 V. The other input levels (address, WE#, OE#, LB#, UB#, I/O) can be in the high impedance state. Rev.1.01, Nov.18.2004, page 18 of 19 R1LV1616H-I Series Low VCC Data Retention Timing Waveform (1) (CS1# Controlled) t CDR Data retention mode tR V CC 2.7 V 2.2 V V DR CS1# 0V CS1# VCC - 0.2 V Low VCC Data Retention Timing Waveform (2) (CS2 Controlled) t CDR Data retention mode tR V CC 2.7 V CS2 V DR 0.6 V 0 V < CS2 < 0.2 V 0V Low VCC Data Retention Timing Waveform (3) (LB#, UB# Controlled) t CDR Data retention mode V CC 2.7 V 2.2 V V DR LB#, UB# 0V Rev.1.01, Nov.18.2004, page 19 of 19 LB#, UB# V CC - 0.2 V tR Revision History Rev. Date R1LV1616H-I Series Data Sheet Contents of Modification Page Description 1.00 Apr. 22, 2004 Initial issue 1.01 Nov. 18, 2004 Addition of 2-Mword x 8-bit function Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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