TC74VHC11F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F,TC74VHC11FN,TC74VHC11FT Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74VHC11F TC74VHC11FN Features * High speed: tpd = 4.1 ns (typ.) at VCC = 5 V * Low power dissipation: ICC = 2 A (max) at Ta = 25C * High noise immunity: VNIH = VNIL = 28% VCC (min) * * Power down protection is provided on all inputs. Balanced propagation delays: tpLH - tpHL * Wide operating voltage range: VCC (opr) = 2 to 5.5 V * Pin and function compatible with 74ALS11 TC74VHC11FT Weight SOP14-P-300-1.27A SOL14-P-150-1.27 TSSOP14-P-0044-0.65A 1 : 0.18 g (typ.) : 0.12 g (typ.) : 0.06 g (typ.) 2007-10-01 TC74VHC11F/FN/FT Pin Assignment 1A IEC Logic Symbol 14 1 1B 2 13 1C 2A 3 12 1Y 2B 11 4 1A VCC 1B 1C 2A 2B 2C 3C 2C 5 10 3B 2Y 6 9 3A GND 7 8 3Y 3A 3B 3C (1) (2) & (12) (13) 1Y (3) (4) (6) (5) 2Y (9) (10) (8) (11) 3Y (top view) Truth Table A B C Y L X X L X L X L X X L L H H H H X: Don't care Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range VCC -0.5 to 7.0 V DC input voltage VIN -0.5 to 7.0 V DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK -20 mA Output diode current IOK 20 mA DC output current IOUT 25 mA DC VCC/ground current ICC 50 mA Power dissipation PD 180 mW Storage temperature Tstg -65 to 150 C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-10-01 TC74VHC11F/FN/FT Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 5.5 V Input voltage VIN 0 to 5.5 V VOUT 0 to VCC V -40 to 85 C Output voltage Operating temperature Topr Input rise and fall time Note: 0 to 100 (VCC = 3.3 0.3 V) dt/dv ns/V 0 to 20 (VCC = 5 0.5 V) The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Characteristics VCC (V) Min Typ. Max Min Max 2.0 1.50 1.50 3.0 to 5.5 VCC x 0.7 2.0 0.50 3.0 to 5.5 VCC x 0.3 VCC x 0.3 2.0 1.9 2.0 1.9 3.0 2.9 3.0 2.9 4.5 4.4 4.5 4.4 IOH = -4 mA 3.0 2.58 2.48 IOH = -8 mA 4.5 3.94 3.80 2.0 0.0 0.1 0.1 3.0 0.0 0.1 0.1 High-level input voltage VIH Low-level input voltage VIL IOH = -50 A High-level output voltage VOH VIN = VIH IOL = 50 A Low-level output voltage VOL Ta = -40 to 85C Ta = 25C Test Condition Symbol VIN = VIH or VIL VCC x 0.7 Unit V 0.50 4.5 0.0 0.1 0.1 IOL = 4 mA 3.0 0.36 0.44 IOL = 8 mA 4.5 0.36 0.44 V V V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 0.1 1.0 A Quiescent supply current ICC VIN = VCC or GND 5.5 2.0 20.0 A 3 2007-10-01 TC74VHC11F/FN/FT AC Characteristics (input: tr = tf = 3 ns) Characteristics VCC (V) Propagation delay time tpLH tpHL Input capacitance CIN Power dissipation capacitance CPD 3.3 0.3 5.0 0.5 Ta = -40 to 85C Ta = 25C Test Condition Symbol Unit CL (pF) Min Typ. Max Min Max 15 6.1 8.8 1.0 10.5 50 8.6 12.3 1.0 14.0 15 4.1 5.9 1.0 7.0 50 5.6 7.9 1.0 9.0 4 10 10 pF 17 pF (Note) ns Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD*VCC*fIN + ICC/3 (per gate) Input Equivalent Circuit INPUT 4 2007-10-01 TC74VHC11F/FN/FT Package Dimensions Weight: 0.18 g (typ.) 5 2007-10-01 TC74VHC11F/FN/FT Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.12 g (typ.) 6 2007-10-01 TC74VHC11F/FN/FT Package Dimensions Weight: 0.06 g (typ.) 7 2007-10-01 TC74VHC11F/FN/FT RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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