G2SBA20, G2SBA60, G2SBA80
Vishay General Semiconductor
Document Number: 89303
Revision: 16-Nov-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical IR less than 0.1 µA
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
MECHANICAL DATA
Case: GBL
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 200 V, 600 V, 800 V
IFSM 60 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Type GBL
~
~
~~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G2SBA20 G2SBA60 G2SBA80 UNIT
Maximum repetitive peak reverse voltage VRRM 200 600 800 V
Maximum RMS voltage VRMS 140 420 560 V
Maximum DC blocking voltage VDC 200 600 800 V
Maximum average forward rectified output
current at TA = 25 °C IF(AV) 1.5 A
Peak forward surge current single sine-wave superimposed
on rated load IFSM 60 A
Rating for fusing (t < 8.3 ms) I2t 15 A2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL G2SBA20 G2SBA60 G2SBA80 UNIT
Maximum instantaneous forward
voltage drop per diode 0.75 A VF 1.00 V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
300 µA
G2SBA20, G2SBA60, G2SBA80
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89303
Revision: 16-Nov-11
2
Note
(1) Unit mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G2SBA20 G2SBA60 G2SBA80 UNIT
Typical thermal resistance RθJA
RθJC
40
12 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
G2SBA60-M3/45 2.017 45 20 Tube
G2SBA60-M3/51 2.017 51 400 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
0.5
1.0
1.5
2.0
7550250 100 125 150
Temperature (°C)
Average Forward Output (IF(AV))
P.C.B. Mounting, T
A
0
20
40
60
80
100
1 100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
10
1.0 Cycle
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.01
0.1
1
10
100
0.6 1.0 1.4 1.82.2 2.6 3.0 3.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.01
0.1
1
10
100
806040200 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TA = 125 °C
TA = 25 °C
G2SBA20, G2SBA60, G2SBA80
Vishay General Semiconductor
Document Number: 89303
Revision: 16-Nov-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Junction Capacitance Per Diode
10
100
0.1 100
101
Reverse Voltage (V)
Junction Capacitance (pF)
1
Figure 6. Typical Transient Thermal Impedance
0.01
0.1
1
10
100
0.01 0.1 101 100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.098 (2.5)
0.075 (1.9)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76) 0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
0.050 (1.27)
0.040 (1.02)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.080 (2.03)
0.060 (1.50)
Polarity shown on front side of case, positive lead beveled corner
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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