TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA TPM1919-60 MICROWAVE POWER GaAs FET FEATURES : HIGH POWER HM PARTIALLY MATCHED TYPE Pigg = 48.0 dBm at 1.9 GHz Ml HIGH GAIN . MN HERMETICALLY SEALED PACKAGE Gigg = 13dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. Output Power at 1dB Compression Point Pigs dBm 47.0 48.0 - Power Gain at 1dB Vos = 12V Compression Point Gros f = 1.9GHz dB 12.0 13.0 _ Drain Current Ips lps (RF Off) = 6A A - 12.0 15.0 Power Added Efficiency Tadd % + 40 _ Channel-Temperature Rise ATch NOTE1 C ~ - 100 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. Vos = 3V Transconductance gm log = 12.0A S 20.0 - a Vos = 3 V _ Pinch off Voltage Vesott long = 300MA Vv 1.0 1.8 -3.0 Saturated Drain Current lpss ws - ay A - 38 46 Gate-Source Breakdown _ . Voltage. Vaso leg =10mA Vv 5 - - | Thermal Resistance Rth 6-0) Channel to Case C/W - 0.6 0.8- NOTE1 : ATch = (VDS x IDS + Pin Po) x Rth (C-C) ** RECOMMENDED GATE RESISTANCE (Rg) : Rg=30 Q (MAX. ) %* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. %* The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. TOSHIBA CORPORATION Jan. 1999TPM1919-60 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voitage Vos V 15 Gate-Source Voltage Ves Vv -65 Drain Current Ips A 46 Total Power Dissipation (Tc = 25C) P+ Ww | 185 Channel Temperature Teh C 175 Storage Temperature Tostg C 65~175 PACKAGE OUTLINE (2-16G6A) Unit in mm z 4-CL.0 ~ @ rs @) Gate C ae ) ri @) Source @) Drain at =I en 3 + | @ 3 |_| | 5 1p) es UY i m= il ) Z = Q Re 20.4403 a 24.5 MAX. 8 16.4 MAX, * Ss : | x Lis | J %@ , gg 4H 4 eo - nN HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.RF PERFORMANCES. TPM1919-60- Po (dBm) Po (dBm) 49 48 47 46 48 46 44 42 40 38 36 Output Power vs. Frequency Vpg=12V Ipg=12A P3y=35dBm aT 1.7 1.8 1.9 2.0 2.1 Frequency (GHz) Output Power vs. Input Power f=1.9GHz Vps= 12V Ipge12A _ Po iy S| Nadd wet L ZL Yo A wat ss 25 27 29 31 33 35 37 50 40 30 20 10 Madd (%)POWER DISSIPATION VS. CASE TEMPERATURE Pr (W) 200 100 ~TPM1919-60 40 80 . 120 Te (C) 160 200