This is information on a product in full production.
May 2012 Doc ID 018503 Rev 3 1/68
1
STW82101B
RF down converter with embedded integer-N synthesizer
Datasheet − production data
Features
■High linearity:
– IIP3: +24.5 dBm
– 2FRF-2FLO spurious rejection: 75 dBc
■Noise figure:
–NF: 9.5dB
■Conversion gain
– CG: 8.5 dB
■RF range: 695 MHz to 960 MHz
■Wide IF amplifier frequency range: 70 MHz to
400 MHz
■Integrated RF balun with internal matching
■Dual differential integrated VCOs with
automatic center frequency calibration:
– LOA: 850 to 1025 MHz
– LOB: 1025 to 1185 MHz
■Embedded integer-N synthesizer
– Dual modulus programmable prescaler
(16/17 or 19/20)
– Programmable reference frequency divider
(10 bits)
– Adjustable charge pump current
– Digital lock detector
– Excellent integrated phase noise
– Fast lock time: 150 µs
■Integrated DAC with dual current output
■Supply: 3.3 V and 5 V analog,
3.3 V digital
■Dual digital bus interface: SPI and I2C bus (fast
mode) with 3 bit programmable address
(1101A2A1A0)
■Process: 0.35 µm BICMOS SiGe
■Operating temperature range -40 to +85oC
■44-lead exposed pad VFQFPN
package 7x7x1.0 mm
Applications
■Cellular infrastructure equipment:
– IF sampling receivers
– Digital PA linearization loops
■Other wireless communication systems.
Description
The STMicroelectronics STW82101B is an
integrated down converter providing 8.5 dB of
gain, 9.5 dB NF, and a very high input linearity by
means of its passive mixer.
Embedding two wide band auto calibrating VCOs
and an integer-N synthesizer, the STW82101B is
suitable for both Rx and Tx requirements for
Cellular infrastructure equipment.
The integrated RF balun and internal matching
permit direct 50 ohm single-ended interface to RF
port. The IF output is suitable for driving 200-ohm
impedance filters.
By embedding a DAC with dual current output to
drive an external PIN diode attenuator, the
STW82101B replaces several costly discrete
components and offers a significant footprint
reduction.
The STW82101B device is designed with
STMicroelectronics advanced 0.35 µm
SiGe process. Its performance is specified over a
-40 °C to +85 °C temperature range.
Table 1. Device summary
Part number Package Packaging
STW82101B VFQFPN-44 Tray
STW82101BTR VFQFPN-44 Tape and reel
VFQFPN-44
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