2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–179 February 24, 2000-21
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• Isolation Test Voltage, 5300 V
RMS
• High Isolation Resistance, 10
11
Ω
Typical
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ...................................... 3.0 V
Continuous Forward Current ..........................60 mA
Power Dissipation at 25
°
C........................... 100 mW
Derate Linearly from 25
°
C ..................... 1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage ............... 30 V
Collector (Load) Current...............................125 mA
Power Dissipation at 25
°
C Ambient ............ 150 mW
Derate Linearly from 25
°
C ....................... 2.0 mW/
°
C
Package
Isolation Test Voltage (between emitter
and detector refer to standard climate
23
°
C/50%RH, DIN 50014)
t=1.0 sec.............................................. 5300 V
RMS
Creepage ..................................................
≥
7.0 mm
Clearance..................................................
≥
7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ........................
≥
175
Isolation Resistance
V
IO
=500V,
T
A
=25
°
C ...........................
R
IO
=10
12
Ω
V
IO
=500V,
T
A
=100
°
C .........................
R
IO
=10
11
Ω
Total Dissipation at 25
°
C Ambient
ILD32 ...................................................... 400 mW
ILQ32 ...................................................... 500 mW
Derate Linearly from 25
°
C
ILD32 ................................................ 5.33 mW/
°
C
ILQ32 ................................................ 6.67 mW/
°
C
Storage Temperature .................... –55
°
C to +150
°
C
Operating Temperature ................ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ..................... 10 sec.
DESCRIPTION
The ILD32/ILQ32 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits. These optocou-
plers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
The ILD32 has two isolated channels in a DIP pack-
age, and the ILQ32 has four channels. These
devices can be used to replace 4N32s or 4N33s in
applications calling for several single channel
optocouplers on a board.
V
DE
Table 1. Electrical Characteristics,
T
A
=25
°
C
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
— 1.25 1.5 V
I
F
=10 mA
Reverse Current
I
R
— 0.1 100
µ
A
V
R
=3.0 V
Capacitance
C
O
—25— pF
V
R
=0 V
Detector
Breakdown Voltage
Collector-Emitter
BV
CEO
30 — — V
I
C
=100
µ
A
I
F
=0
Breakdown Voltage
Emitter-Collector
BV
ECO
5.0 10 — V
I
E
=100
µ
A
Collector-Emitter
Leakage Current
I
CEO
— 1.0 100 nA
V
CE
=10V
I
F
=0
Package
Current Transfer Ratio CTR 500 — — %
I
F
=10 mA
V
CE
=10V
Collector Emitter
Saturation Voltage
V
CEsat
— — 1.0 V
I
C
=2.0 mA
I
F
=8.0 mA
Isolation Capacitance
C
ISOL
— 0.5 — pF —
Turn-On Time
t
on
—15—
µ
s
V
CC
=10 V
I
F
=5.0 mA
R
L
=100
Ω
Turn-Off Time
t
off
—30—
µ
s
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
1
2
3
4
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Dimensions in inches (mm)
Dual Channel
Quad Channel
DUAL/QUADCHANNEL
ILD32/ILQ32
Photodarlington Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD/Q32
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–180 February 24, 2000-21
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTR
ce
at
T
A
=25
°
C versus LED current
Figure 3. Normalized non-saturated and saturated
collector-emitter current versus LED current
Figure 4. Low to high propagation delay versus
collector load resistance and LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
.1 1 10 100 1000
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
Vce =1
V
Vce = 10
V
IF - LED Current - mA
NCTRce - Normalized CTR
Vce = 10 V
IF = 10 mA
Ta = 25 °C
Normalized to:
100
101.1
.001
.01
.1
1
10
Vce = 1V
Vce = 10 V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 mA
Vce = 10 V
Normalized to:
0 5 10 15 20
0
20
40
60
80 Ta = 25°C, Vcc = 10 V
Vth = 1.5 V
220Ω
470Ω
1KΩ
IF - LED Current - mA
tpLH - Low/High Propagatio n
Delay - µs
100Ω
Figure 5. High to low propagation delay versus
collector load resistamce and LED current
Figure 6. Switching timing
Figure 7. Switching schematic
0 5 10 15 20
0
5
10
15
20
100Ω
1KΩ
IF - LED Current - mA
tpHL - High/Low Propagation
delay - µs
Ta = 25°C
Vcc = 10 V
Vth = 1.5 V
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
RL
VCC=10 V
F=10 KHz,
DF=50%
IF=5 mA
