Feb-27-2004
1
BG3230_BG3230R
VPS05604
6
3
1
54
2
DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
BG3230 BG3230R
EHA07215
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
A
B
4
56
1 2 3 1 2 3
4
56
A
B
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG3230
BG3230R
SOT363
SOT363
1=G1
1=G1
2=G2
2=S
3=D
3=D
4=D
4=D
5=S
5=G2
6=G1
6=G1
KBs
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 8 V
Continuous drain current ID25 mA
Gate 1/ gate 2-source current ±IG1/2SM 1
Gate 1/ gate 2-source voltage ±VG1/G2S 6 V
Total power dissipation Ptot 160 mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1) Rthchs ≤ 280 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-27-2004
2
BG3230_BG3230R
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 100 µA, VG1S = 0 , VG2S = 0
V(BR)DS 12 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
+V(BR)G1SS 6 - 15
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0
±V(BR)G2SS 6 - 15
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
+IG1SS - - 50 µA
Gate 2 source leakage current
±VG2S = 6 V, VG1S = 0 , VDS = 0
±IG2SS - - 50 nA
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
IDSS - - 100 µA
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
IDSO - 13 - mA
Gate2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
VG2S(p) - 1 - V
Feb-27-2004
3
BG3230_BG3230R
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics - (verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4 V
gfs - 33 - mS
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Cg1ss - 1.9 - pF
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 100 MHz
Cdss - 1.1 -
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
VDS = 5 V, VG2S = 4 V, f = 45 MHz
Gp
-
-
24
31
-
-
dB
Noise figure (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
VDS = 5 V, VG2S = 4 V, f = 45 MHz
F
-
-
1.3
1.7
-
-
dB
Gain control range
VDS = 5 V, VG2S = 4...0 V, f = 800 MHz
∆Gp45 - -
Cross-modulation k=1%, fw=50MHz, funw=60MHz
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
Xmod
90
-
96
-
87
100
-
-
-
-
Feb-27-2004
4
BG3230_BG3230R
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Output characteristics ID = ƒ(VDS)
0 1 2 3 4 5 6 7 8 V10
VDS
0
1
2
3
4
5
6
7
8
9
10
11
12
mA
14
ID
1.9V
2V
1.8V
1.7V
1.6V
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
0 4 8 12 16 20 mA 26
ID
0
5
10
15
20
25
mS
35
gfs
4V
3.5V
3V
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
0 0.4 0.8 1.2 1.6 2 V2.8
VG1S
0
2
4
6
8
10
12
14
16
18
20
22
mA
26
ID
4V
3V
2V
2.5V
3.5V
Feb-27-2004
5
BG3230_BG3230R
AGC characteristic AGC = ƒ(VG2S)
f = 800 MHz
0 0.5 1 1.5 2 2.5 3 V4
VG2
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
dB
0
AGC
AGC characteristic AGC = ƒ(VG2S)
f = 200 MHz
0 0.5 1 1.5 2 2.5 3 V4
VG2
-90
-80
-70
-60
-50
-40
-30
-20
dB
0
AGC
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
0 10 20 30 dB 50
AGC
80
90
100
dBµV
120
Vunw
Feb-27-2004
6
BG3230_BG3230R
Cossmodulation test circuit
4n7
4n7
VGG
VAGC VDS
4n7
2.2 µH
R1
10 kOhm
RL
50 Ohm
RGEN
50 Ohm 50 Ohm RG1
4n7
