BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 * Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage * Two AGC amplifiers in one single package 2 * Integrated stabilized bias network 3 1 VPS05604 * Integrated gate protection diodes * High gain, low noise figure * Improved cross modulation at gain reduction * High AGC-range BG3230 6 BG3230R 6 5 4 Drain AGC HF Input 4 5 A B A 1 B 2 1 3 HF Output + DC G2 G1 GND 2 EHA07215 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3230 SOT363 1=G1 2=G2 3=D 4=D 5=S 6=G1 KBs BG3230R SOT363 1=G1 2=S 3=D 4=D 5=G2 6=G1 KIs 180 rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current IG1/2SM 1 Gate 1/ gate 2-source voltage V G1/G2S 6 Total power dissipation Ptot 160 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value 8 25 Unit V mA V mW C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs 280 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3230_BG3230R Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 V (BR)G2SS 6 - 15 +IG1SS - - 50 A IG2SS - - 50 nA IDSS - - 100 A IDSO - 13 - mA VG2S(p) - 1 - V DC Characteristics Drain-source breakdown voltage V ID = 100 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current V G2S = 6 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, I D = 100 A 2 Feb-27-2004 BG3230_BG3230R Electrical Characteristics Parameter Symbol Values Unit min. typ. max. g fs - 33 - mS Cg1ss - 1.9 - pF Cdss - 1.1 - AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V Gate1 input capacitance VDS = 5 V, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, V G2S = 4 V, f = 100 MHz Power gain (self biased) dB Gp VDS = 5 V, V G2S = 4 V, f = 800 MHz - 24 - VDS = 5 V, V G2S = 4 V, f = 45 MHz - 31 - Noise figure (self biased) dB F VDS = 5 V, V G2S = 4 V, f = 800 MHz - 1.3 - VDS = 5 V, V G2S = 4 V, f = 45 MHz - 1.7 - 45 - - G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod - AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 3 Feb-27-2004 BG3230_BG3230R Total power dissipation Ptot = (TS) Output characteristics ID = (V DS) 300 14 mA mW 2V 12 11 ID P tot 10 200 1.9V 9 8 150 7 1.8V 6 5 100 1.7V 4 3 50 1.6V 2 1 0 0 20 40 60 80 100 120 C 0 0 150 1 2 3 4 5 6 7 V 8 10 VDS TS Gate 1 forward transconductance Drain current ID = (V G1S) g fs = (ID) VDS = 5V, VG2S = Parameter VDS = 5V VG2S = Parameter 35 26 mA 4V mS 22 4V 20 25 3.5V ID gfs 18 20 3.5V 3V 16 14 12 15 10 3V 2.5V 8 10 6 4 5 2V 2 0 0 4 8 12 16 20 mA 0 0 26 ID 0.4 0.8 1.2 1.6 2 V 2.8 VG1S 4 Feb-27-2004 BG3230_BG3230R AGC characteristic AGC = (VG2S) f = 200 MHz AGC characteristic AGC = (V G2S) f = 800 MHz 0 0 dB dB -10 -15 -20 -30 AGC AGC -20 -25 -40 -30 -50 -35 -40 -60 -45 -50 -70 -55 -80 -90 0 -60 0.5 1 1.5 2 2.5 V 3 -65 0 4 VG2 0.5 1 1.5 2 2.5 3 V 4 VG2 Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 k 120 Vunw dBV 100 90 80 0 10 20 30 dB 50 AGC 5 Feb-27-2004 BG3230_BG3230R Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 H 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Feb-27-2004