MSFC130 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 130Amp Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC130-08 MSFC130-12 MSFC130-16 800V 1200V 1600V 900V 1300V 1700V Diode Maximum Ratings Symbol Item Conditions ID Output Current(D.C.) Tc=85 IFSM Surge forward current t=10mS Tvj =45 i2t Visol Tvj Tstg Mt Ms Weight A A A2s 3000 V -40 to +125 To terminals(M6) -40 to +125 315% Nm To heatsink(M6) 515% Nm 165 g a.c.50HZ;r.m.s.;1min ModuleApproximately Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) 130 4700 Operating Junction Temperature Storage Temperature Mounting Torque Units 110000 Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) Values Thermal Impedance, max. Values Units Junction to Case Conditions 0.09 /W Case to Heatsink 0.05 /W Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. MSFC130-Rev0 Oct, 2011 Conditions T=25 IF =500A Tvj =25 VRD=VRRM Tvj =125 VRD=VRRM Values Min. Typ. 0.5 9 Max. 1.80 Units V mA mA www.microsemi.com 1/4 MSFC130 Thyristor Maximum Ratings Symbol Values Units ITAV Average On-State Current Sine 180o;Tc=85 130 A ITSM Surge On-State Current TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 4700 4000 A Circuit Fusing Consideration TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 110000 80000 A2s i2t Item Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature Mt Mounting Torque Ms Conditions a.c.50HZ;r.m.s.;1min 3000 -40 to +130 -40 to +125 V To terminals(M6) 315% Nm To heatsink(M6) 515% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Values Units Junction to Case 0.18 /W Case to Heatsink 0.10 /W Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. Conditions Values Min. Typ. Max. Units T=25 IT =500A 1.8 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 40 mA On state threshold voltage For power-loss calculations only (TVJ =125) 1 V Value of on-state slope resistance. max TVJ =TVJM 1.6 m VGT Gate Trigger Voltage, max. TVJ =25 , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25 , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125,VD =2/3VDRM 0.25 V IGD IRRM/IDRM VTO rT Non-triggering gate current, max. TVJ =125, VD =2/3VDRM 10 mA IL Latching current, max. TVJ =25 , RG = 33 300 1000 mA IH Holding current, max. TVJ =25 , VD =6V 150 400 mA tgd Gate controlled delay time TVJ=25, IG=1A, diG/dt=1A/us tq Circuit commutated turn-off time TVJ =TVJM MSFC130-Rev0 Oct, 2011 1 us 100 us www.microsemi.com 2/4 MSFC130 Performance Curves 250 250 sin.180 W rec.120 200 A DC DC 200 rec.60 150 150 rec.30 sin.180 rec.120 100 100 rec.60 50 50 PTAV ITAVM 0 0 ITAV 50 100 150 A 200 rec.30 0 0 Tc Fig1. Power dissipation 100 6000 Zth(j-S) / W Zth(j-C) 0.15 0.001 t 0.01 0.1 1 10 S 100 50HZ A 3000 0 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 600 A 130 Fig2.Forward Current Derating Curve 0.30 0 50 Typ. 400 max. 200 25 - - -125 IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics MSFC130-Rev0 Oct, 2011 www.microsemi.com 3/4 MSFC130 100 1/2*MSFC130 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VGD125 VG IGT IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F2 x Dimensions in mm MSFC130-Rev0 Oct, 2011 www.microsemi.com 4/4