n Outline Drawing IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 20 150 300 150 300 1100 +150 -40 +125 2500 3.5 4.5 Units V V A W C C V Nm Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 4.5 Nm (M6) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE= 15V RG=5.6 IF=150A VGE=0V IF=150A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 24000 8700 7740 0.65 0.25 0.85 0.35 Max. 2.0 30 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 s V ns * Thermal Characteristics Items Thermal Resistance http://store.iiic.cc/ Typ. 0.025 Max. 0.11 0.33 Units C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj=25C Tj=125C V G E =20V,15V,12V,10V, V G E =20V,15V,12V,10V 300 200 100 8V Collector current : Ic [A] Collector current : Ic [A] 300 200 8V 100 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : V C E [V] 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage Tj=25C Tj=125C CE [V] 10 8 6 Ic= 4 300A 150A 2 8 Collector-Emitter voltage V CE [V] 2 Collector-Emitter voltage : V C E [V] 10 Collector-Emitter voltage :V 1 75A 6 4 Ic= 300A 150A 2 75A 0 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V G E [V] 5 10 15 20 25 Gate-Emitter voltage : V G E [V] Switching time vs. Collector current Switching time vs. Collector current Vcc=600V, RG=5.6 , V G E =15V, Tj=25C Vcc=600V, R G =5.6 , V G E =15V, Tj=125C 1000 toff ton tf tr 1000 tf tr Switching time : ton, tr, toff, tf [nsec] Switching time : ton, tr, toff, tf [nsec] toff ton 100 100 10 10 0 100 200 300 0 100 200 Collector current : Ic [A] Collector current : Ic [A] http://store.iiic.cc/ 300 Switching time vs. RG Dynamic input characteristics Vcc=600V, Ic=150A, V G E =15V, Tj=25C Tj=25C 1000 tr tf 100 25 Vcc=400V CE [V] toff ton 600V 800 20 800V Collector-Emitter voltage : V Switching time : ton, tr, toff, tf [nsec] 1000 600 15 400 10 200 5 0 0 0 10 500 Gate resistance : RG [ ] 1000 1500 Gate charge : Qg 2000 [nC] Forward current vs. Forward voltage Reverse recovery characteristics VGE=OV trr, Irr vs. I F trr Tj=125C 125C 25C trr 100 : trr [nsec] Reverse recovery current : Irr [A] 200 25C Irr Irr 25C 0 0 1 2 3 4 125C 100 Reverse recovery time Forward current : IF [A] 300 10 0 5 100 Forward voltage : V F [V] 200 300 Forward current : I F [A] Reversed biased safe operating area +VGE=15V, -V G E <15V, Tj<125C, R G >5.6 Transient thermal resistance 1400 1200 0,1 IGBT Collector current : Ic [A] Thermal resistance : Rth(j-c) [C/W] Diode 0,01 1000 SCSOA (non-repetitive pulse) 800 600 400 200 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 Collector-Emitter voltage : V C E [V] Pulse width : PW [sec] http://store.iiic.cc/ 1200 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current Tj=25C Vcc=600V, R G =5.6 , V G E =15V 50 100 40 Eoff 125C Switching loss : Eon,Eoff,Err 30 Eon 25C 20 Eoff 25C Err 125C 10 Err 25C Capacitance : Cies, Coes, Cres [nF] [mJ/cycle] Eon 125C Cies 10 Coes 1 Cres 0 0 50 100 150 200 250 300 0 Collector Current : Ic [A] 5 10 15 20 25 30 Collector-Emitter Voltage : V C E [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Strae 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com http://store.iiic.cc/ 35