MBRF30100CT
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 100Volts
FORWARD CURRENT – 30 Amperes
FEATURES
•
Metal of silicon rectifier, majority carrier conduction
•
Low forward voltage drop
•
High efficiency
•
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
•
Case Material: Plastic material, UL flammability
classification 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Lead Free Plating
•
Polarity indicator: As marked on the body
•
Weight: 0.06 ounces, 1.70 grams
•
Component in accordance to RoHs 2002/95/EC
•
ESD capability : HBM_8KV (JESD22-A114)
•
Maximum mounting torque = 0.5 N.m (5.1 Kgf.cm)
ITO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
PARAMETER SYMBOL
MBRF30100CT UNIT
Device marking code Note MBRF30100CT ---
Maximum Repetitive Peak Reverse Voltage V
RRM
100 V
Average Rectified Output Current @δ=0.5 (FIG.1_per diode)
I
F
30 A
Peak Forward Surge Current 8.3ms single half sine-wave I
FSM
250 A
Storage temperature range T
STG
-55 to +175 °C
Operating junction temperature range T
J
-55 to +175 °C
PARAMETER TEST CONDITIONS SYMBOL
Min. Typ. Max. UNIT
Breakdown voltage IR=0.1mA Tj=25°C V
B
100 --- --- V
IF=15A Tj=25°C
Tj=125°C
---
---
0.62
0.80
0.67
Forward Voltage (1)
IF=30A Tj=25°C
V
F
--- ---
V
Leakage Current VR=100V Tj=25°C
Tj=125°C I
R
---
---
0.5
10
THERMAL CHARACTERISTIC SYMBOL
Typical UNIT
Typical thermal resistance_Junction to Case (2) R
Θ
JC
3.5 °C/W
Typical thermal resistance_Junction to Lead (2) R
Θ
JL
3.5 °C/W
Note :
REV. 3. Oct-2010, KTHC59
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Thermal Resistance test performed in accordance with JESD-51. R
Θ
JL
is measured at the PIN 2
,
R
Θ
J
is measured at the top centre of body.