AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
v00.0610
General Description
Features
Functional Diagram
The HMC930 is a GaAs MMIC pHEMT Distrib-
uted Power Amplier which operates between DC
and 40 GHz. The amplier provides 13 dB of gain,
33.5 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC930 exhibits a slightly
positive gain slope from 8 to 32 GHz, making it
ideal for EW, ECM, Radar and test equipment
applications. The HMC930 amplier I/Os are inter-
nally matched to 50 Ohms facilitating integra-
tion into Mutli-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
High P1dB Output Power: 22 dBm
High Psat Output Power: 24 dBm
High Gain: 13 dB
High Output IP3: 33.5 dBm
Supply Voltage: +10 V @ 175 mA
50 Ohm Matched Input/Output
Die Size: 2.82 x 1.50 x 0.1 mm
Typical Applications
The HMC930 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 12 12 - 32 32 - 40 GHz
Gain 11.5 13.5 11 13 10 12 dB
Gain Flatness ±0.5 ±0.3 ±1.0 dB
Gain Variation Over Temperature 0.01 0.017 0.032 dB/ °C
Input Return Loss 18 16 15 dB
Output Return Loss 28 20 20 dB
Output Power for 1 dB Compression (P1dB) 21 23 20 22 18 20 dBm
Saturated Output Power (Psat) 25 24 23 dBm
Output Third Order Intercept (IP3) 36 33.5 29 dBm
Noise Figure 4.5 5 7.5 dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 175 175 175 mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
-40
-30
-20
-10
0
10
20
0 5 10 15 20 25 30 35 40 45 50
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
10
20
0.00001 0.0001 0.001 0.01 0.1 1 10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 4 8 12 16 20 24 28 32 36 40
+25C
+85C
-55C
NOISE FIGURE(dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Psat vs. Supply Current
Psat vs. Temperature Psat vs. Supply Voltage
P1dB vs. Supply Current
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
18
20
22
24
26
28
30
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
12
14
16
18
20
22
24
26
28
0 4 8 12 16 20 24 28 32 36 40 44
125 mA
175 mA
P1dB (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
0 4 8 12 16 20 24 28 32 36 40 44
+8V
+10V
+11V
Psat (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
0 4 8 12 16 20 24 28 32 36 40 44
125 mA
175 mA
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature P1dB vs. Supply Voltage
16
18
20
22
24
26
28
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
0 4 8 12 16 20 24 28 32 36 40 44
+8V
+10V
+11V
P1dB (dBm)
FREQUENCY (GHz)
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output IM3 @ Vdd = +11V
Output IP3 vs.
Supply Voltage @ Pout = 14 dBm / Tone
Output IM3 @ Vdd = +8V
Output IM3 @ Vdd = +10V
Output IP3 vs.
Temperature @ Pout = 14 dBm / Tone
Output IP3 vs.
Supply Currents @ Pout = 14 dBm / Tone
20
22
24
26
28
30
32
34
36
38
40
0 4 8 12 16 20 24 28 32 36 40 44
125 mA
175 mA
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2 GHz
8 GHz
14 GHz
20 GHz
28 GHz
34 GHz
40 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2 GHz
8 GHz
14 GHz
20 GHz
28 GHz
34 GHz
40 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16
2 GHz
8 GHz
14 GHz
20 GHz
28 GHz
34 GHz
40 GHz
IM3 (dBc)
Pout/TONE (dBm)
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
24
26
28
30
32
34
36
38
40
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
FREQUENCY (GHz)
IP3 (dBm)
24
26
28
30
32
34
36
38
40
0 4 8 12 16 20 24 28 32 36 40 44
+8V
+10V
+11V
FREQUENCY (GHz)
IP3 (dBm)
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Gain & Power vs. Supply Current @ 20 GHz Gain & Power vs. Supply Voltage @ 20 GHz
Power Dissipation
Power Compression @ 20 GHz
Reverse Isolation vs. Temperature
-80
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24 28 32 36 40 44
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
125 135 145 155 165 175
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
0
4
8
12
16
20
24
28
32
0 3 6 9 12 15
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
15
20
25
30
35
8 9 10 11
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
0
1
2
3
0 3 6 9 12 15
4 GHz
10 GHz
20 GHz
30 GHz
40 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Second Harmonics vs. Temperature @ Pout =
14 dBm, Vdd = 10V & Vgg = 3.5V, 175mA
Second Harmonics vs.
Vdd @ Pout = 14 dBm, Idd = 175mA [1]
Second Harmonics vs. Pout
Vdd = 10V & Vgg = 3.5V & Idd = 175mA
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+25C
+85C
-40C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+8V
+10V
+11V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+4 dBm
+6 dBm
+8 dBm
+10 dBm
+12 dBm
+14 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) 12V
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2)
For Vdd = 12V, Vgg2 = 5.5V
Idd >145mA
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN) 17 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C) 2.1 W
Thermal Resistance
(channel to die bottom) 31.1 °C/W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
+9 175
+10 175
+11 175
Typical Supply Current vs. Vdd
Output Power into VSWR >7:1 24 dBm
Storage Temperature -65 to 150 °C
Operating Temperature -55 to 85 °C
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
Die Packaging Information [1]
Standard Alternate
GP-1 [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Pad Number Function Description Interface Schematic
1 RFIN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2 VGG2
Gate control 2 for amplier. Attach bypass
capacitor per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
4, 7 ACG2, ACG4 Low frequency termination. Attach bypass
capacitor per application circuit herein.
3 ACG1 Low frequency termination. Attach bypass
capacitor per application circuit herein.
5 RFOUT & VDD RF output for amplier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6 ACG3 Low frequency termination. Attach bypass
capacitor per application circuit herein.
8 VGG1
Gate control 1 for amplier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplier Biasing Procedure”
application note.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
Assembly Diagram
OBSOLETE
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 10
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
OBSOLETE
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Authorized Distributor
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HMC930