S5MS-E3
www.vishay.com Vishay General Semiconductor
Revision: 14-Aug-13 1Document Number: 89148
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMD Photovoltaic Solar Cell Protection Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell panel blocking diode for protection,
using DC forward current without reverse bias.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1) Mounted on 30 mm x 30 mm Al PCB
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV) 5.0 A
VRRM 1000 V
IFSM 100 A
IR10 μA
VF at IF = 5.0 A 0.90 V
TJ max. 150 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL S5MS UNIT
Device marking code 5MS
Max. repetitive peak reverse voltage VRRM 1000 V
Max. DC forward current (fig. 1) TM = 110 °C IF
5.0 (1)
A
TA = 25 °C 1.6 (2)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 100 A
Operating junction and storage temperature range TOP, TSTG - 55 to + 150 °C
Junction temperature in DC forward current without
reverse bias, t 1 h (3) TJ 200 °C
S5MS-E3
www.vishay.com Vishay General Semiconductor
Revision: 14-Aug-13 2Document Number: 89148
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Notes
(1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm Al PCB. Thermal resistance RJM - junction to mount
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Notes
(1) Mounted on 30 mm x 30 mm Al PCB TM measured at the
terminal (RJM = 8 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 92 °C/W)
Fig. 2 - Forward Power Loss Characteristices
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 2.5 A TA = 25 °C
VF (1)
0.94 -
V
IF = 5.0 A 0.99 1.15
IF = 2.5 A TA = 125 °C 0.82 -
IF = 5.0 A 0.90 1.00
Reverse current Rated VR
TA = 25 °C IR (2) -10
μA
TA = 125 °C 50 250
Max. reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.5 - μs
Typical junction capacitance 4.0 V, 1 MHz CJ40 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL S5MS UNIT
Typical thermal resistance RJA (1) 92 °C/W
RJM (2) 8
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S5MS-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
S5MS-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
Ambient Temperature (°C)
6.0
4.0
0
075150
DC Forward Current (A)
25 100
1.0
50 125
2.0
5.0
3.0
TA = 25 °C (2)
TM = 110 °C (1)
D = 0.1
D = 0.2 D = 0.3
D = 0.5 D = 0.8
D = 1.0
Average Forward Current (A)
6.0
0
036
Average Power Loss (W)
14
1.0
25
3.0
2.0
4.0
D = tp/T tp
T
5.0
S5MS-E3
www.vishay.com Vishay General Semiconductor
Revision: 14-Aug-13 3Document Number: 89148
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
100
0.01
0.2 0.8 1.4
Instantaneous Forward Current (A)
0.4
1
0.6 1.0 1.2
0.1
10
Pulse Width = 300 μs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
1000
0.01
040 100
Instantaneous Reverse Current (μA)
20
10
60
100
1
0.1
80
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Reverse Voltage (V)
100
10
0.1 100
Junction Capacitance (pF)
110
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
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Revision: 02-Oct-12 1Document Number: 91000
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