S7030-1007 - Hamamatsu Photonics K.K.

CCD area image sensor

Back-thinned FFT-CCD

S7030/S7031 series

www.hamamatsu.com 1

The S7030/S7031 series is a family of FFT-CCD image sensors speciﬁ cally designed for low-light-level detection in scientiﬁ c

applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long

aperture in the direction of the device length. This makes the S7030/S7031 series suited for use in spectrophotometry. The

binning operation offers signiﬁ cant improvement in S/N and signal processing speed compared with conventional methods by

which signals are digitally added by an external circuit. The S7030/S7031 series also features low noise and low dark signal (MPP

mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range.

The S7030/S7031 series has an effective pixel size of 24 × 24 m and is available in image areas ranging from 12.288 (H)

× 1.392 (V) mm2 (512 × 58 pixels) up to a large image area of 24.576 (H) × 2.928 (V) mm2 (1024 × 250 pixels).

Features Applications

Non-cooled type: S7030 series

One-stage TE-cooled type: S7031 series

Pixel size: 24 × 24 μm

Line, pixel binning

Wide spectral response range

Low readout noise

Wide dynamic range

MPP operation

High UV sensitivity with good stability

Greater than 90% quantum efﬁ ciency at peak

sensitivity wavelength

Fluorescence spectrometer, ICP

Industrial inspection

Semiconductor inspection

DNA sequencer

Low-light-level detection

Raman spectrometer

Selection guide

Type no. Cooling Number of total pixels Number of effective

pixels

Image size

[mm (H) × mm (V)]

Suitable multichannel

detector head

S7030-0906

Non-cooled

532 × 64 512 × 58 12.288 × 1.392

C7040

S7030-0907 532 × 128 512 × 122 12.288 × 2.928

S7030-1006 1044 × 64 1024 × 58 24.576 × 1.392

S7030-1007 1044 × 128 1024 × 122 24.576 × 2.928

S7031-0906S

One-stage

TE-cooled

532 × 64 512 × 58 12.288 × 1.392

C7041

S7031-0907S 532 × 128 512 × 122 12.288 × 2.928

S7031-1006S 1044 × 64 1024 × 58 24.576 × 1.392

S7031-1007S 1044 × 128 1024 × 122 24.576 × 2.928

Note: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product).

CCD area image sensor S7030/S7031 series

Structure

Absolute maximum ratings (Ta=25 °C)

Operating conditions (MPP mode, Ta=25 °C)

Parameter S7030 series S7031 series

Pixel size (H × V) 24 × 24 m

Vertical clock phase 2 phases

Horizontal clock phase 2 phases

Output circuit One-stage MOSFET source follower

Package 24-pin ceramic DIP (refer to dimensional outlines)

Window*1Quartz glass*2AR-coated sapphire*3

*1: Temporary window type (ex. S7030-0906N) is available upon request.

(Temporary window is ﬁ xed by tape to protect the CCD chip and wire bonding.)

*2: Resing sealing

*3: Hermetic sealing

Parameter Symbol Min. Typ. Max. Unit

Operating temperature*4Topr -50 - +50 °C

Storage temperature Tstg -50 - +70 °C

Output transistor drain voltage VOD -0.5 - +25 V

Reset drain voltage VRD -0.5 - +18 V

Vertical input source voltage VISV -0.5 - +18 V

Horizontal input source voltage VISH -0.5 - +18 V

Vertical input gate voltage VIG1V, VIG2V -10 - +15 V

Horizontal input gate voltage VIG1H, VIG2H -10 - +15 V

Summing gate voltage VSG -10 - +15 V

Output gate voltage VOG -10 - +15 V

Reset gate voltage VRG -10 - +15 V

Transfer gate voltage VTG -10 - +15 V

Vertical shift register clock voltage VP1V, VP2V -10 - +15 V

Horizontal shift register clock voltage VP1H, VP2H -10 - +15 V

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*4: Package temperature (S7030 series), chip temperature (S7031 series)

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 18 20 22 V

Reset drain voltage VRD 11.5 12 12.5 V

Output gate voltage VOG 135V

Substrate voltage VSS -0-V

Test point

vertical input source VISV -VRD -V

horizontal input source VISH -VRD -V

vertical input gate VIG1V, VIG2V -9 -8 - V

horizontal input gate VIG1H, VIG2H -9 -8 - V

Vertical shift register

clock voltage

High VP1VH, VP2VH 468

Low VP1VL, VP2VL -9 -8 -7

Horizontal shift register

clock voltage

High VP1HH, VP2HH 468

Low VP1HL, VP2HL -9 -8 -7

Summing gate voltage High VSGH 468

Low VSGL -9 -8 -7

Reset gate voltage High VRGH 468

Low VRGL -9 -8 -7

Transfer gate voltage High VTGH 468

Low VTGL -9 -8 -7

External load resistance RL20 22 24 kΩ

CCD area image sensor S7030/S7031 series

Electrical characteristics (Ta=25 °C)

Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit

Signal output frequency fc - 0.25 1 MHz

Vertical shift register

capacitance

S703*-0906

CP1V, CP2V

- 750 -

pFS703*-0907/-1006 - 1500 -

S703*-1007 - 3000 -

Horizontal shift register

capacitance

S703*-0906/-0907 CP1H, CP2H -110 -pF

S703*-1006/-1007 180

Summing gate capacitance CSG -30-pF

Reset gate capacitance CRG -30-pF

Transfer gate capacitance S703*-0906/-0907 CTG -55 -pF

S703*-1006/-1007 75

Charge transfer efﬁ ciency*5CTE 0.99995 0.99999 - -

DC output level*6Vout 14 16 18 V

Output impedance*6Zo - 3 4 kΩ

Power consumption*6 *7P - 13 14 mW

*5: Charge transfer efﬁ ciency per pixel, measured at half of the full well capacity

*6: The values depend on the load resistance. (Typical, VOD=20 V, Load resistance=22 kΩ)

*7: Power consumption of the on-chip ampliﬁ er plus load resistance

Parameter Symbol Min. Typ. Max. Unit

Saturation output voltage Vsat - Fw × Sv - V

Full well capacity Vertical Fw 240 320 - ke-

Horizontal*8800 1000 -

CCD node sensitivity Sv 1.8 2.2 - V/e-

Dark current*9

(MPP mode)

25 °C DS - 100 1000 e-/pixel/s

0 °C - 10 100

Readout noise*10 Nr - 8 16 e- rms

Dynamic range*11 Line binning DR 100000 125000 - -

Area scanning 30000 40000 - -

Photoresponse nonuniformity*12 PRNU - ±3 ±10 %

Spectral response range λ- 200 to 1100 - nm

Blemish

Point defect*13 White spots

--0-

Black spots - - 10 -

Cluster defect*14 --3-

Column defect*15 --0-

*8: The linearity is ±1.5%.

*9: Dark current nearly doubles for every 5 to 7 °C increase in temperature.

*10: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 °C, operating frequency:

150 kHz)

*11: Dynamic range = Full well capacity / Readout noise

*12: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)

*13: White spots

Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C.

Black spots

Pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the

saturation charge)

*14: 2 to 9 contiguous defective pixels

*15: 10 or more contiguous defective pixels

Fixed pattern noise (peak to peak)

Signal × 100

[%]Photoresponse nonuniformity =

CCD area image sensor S7030/S7031 series

Spectral response (without window)*16

Dark current vs. temperature

Spectral transmittance characteristics

KMPDB0058EB

*16:

Spectral response with quartz glass or AR-coated sapphire is decreased according to the spectral transmittance characteristic of window material.

Quantum efficiency (%)

Wavelength (nm)

(Typ. Ta=25 °C)

200 400 600 800 1000 1200

100

Front-illuminated CCD

(UV coated)

Back-thinned CCD

100 200

Wavelength (nm)

Transmittance (%)

300 400 500 600 700 800 900

1000 1100 1200

100 (Typ. Ta=25 °C)

Quartz window

AR coated sapphire

-50 -40 -30 -20 0-10 10 20 30

Temperature (°C)

0.01

0.1

100

1000

Dark current (e-/pixel/s)

(Typ.)

KMPDB0110EA KMPDB0256EA

CCD area image sensor S7030/S7031 series

KMPDC0016ED

Device structure (conceptual drawing of top view)

893

2-bevel

signal out

4 blank pixels 4 blank pixels

V=58, 122

H=512, 1024

4-bevel

Thinning

Effective pixels

Horizontal

shift register

Horizontal

shift register

Thinning

12345

6-bevel 6-bevel

nsignal out

Note: When viewed from the direction of the incident light, the horizontal shift register is

covered with a thick silicon layer (dead layer). However, long-wavelength light

passes through the silicon dead layer and may possibly be detected by the horizontal

shift register. To prevent this, provide light shield on that area as needed.

CCD area image sensor S7030/S7031 series

Line binning

Timing chart

Parameter Symbol Min. Typ. Max. Unit

P1V, P2V, TG*17 Pulse width

S703*-0906

Tpwv

1.5 2 -

sS703*-0907/-1006 34-

S703*-1007 68-

Rise and fall time Tprv, Tpfv 10 - - ns

P1H, P2H*17

Pulse width Tpwh 500 2000 - ns

Rise and fall time Tprh, Tpfh 10 - - ns

Duty ratio - - 50 - %

Pulse width Tpws 500 2000 - ns

Rise and fall time Tprs, Tpfs 10 - - ns

Duty ratio - - 50 - %

RG Pulse width Tpwr 100 - - ns

Rise and fall time Tprr, Tpfr 5 - - ns

TG – P1H Overlap time Tovr 3 - - s

*17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

Integration period

(shutter must be open)

Vertical binning period

(shutter must be closed)

P1V

P2V, TG

P1H

P2H, SG

Readout period (shutter must be closed)

3.. 62

3..126

127

64←

128←

58 + 6 (bevel): S703*-0906/-1006

122 + 6 (bevel): S703*-0907/-1007

Tpwv

Tovr

Tpwh, Tpws

Tpwr

123

531

1043

532

1044

: S703*-0906/-0907

: S703*-1006/-1007

4..530

4..1042

D19D2..D10,D1 D20

D20D2..D10, S1..S1024, D11..D19D1

S1..S512,

D11.. : S703*-0906/-0907

: S703*-1006/-1007

KMPDC0017ED

CCD area image sensor S7030/S7031 series

Area scanning: large full well mode

Integration period

(shutter must be open)

P1V

P2V, TG

P1H

P2H, SG

Readout period (shutter must be closed)

Enlarged view

Tpwv

Tovr

Tpwr

D1 D2 D3 D4 D18 D19 D20

D5..D10, S1..S1024, D11..D17

P2V, TG

P1H

P2H, SG

Tpwh, Tpws

123

S1..S512 : S703*-0906/-0907

: S703*-1006/-1007

4.. 63

4..127

64←58 + 6 (bevel): S703*-0906/-1006

128←122 + 6 (bevel): S703*-0907/-1007

Parameter Symbol Min. Typ. Max. Unit

P1V, P2V, TG*18 Pulse width

S703*-0906

Tpwv

1.5 2 -

sS703*-0907/-1006 34-

S703*-1007 68-

Rise and fall time Tprv, Tpfv 10 - - ns

P1H, P2H*18

Pulse width Tpwh 500 2000 - ns

Rise and fall time Tprh, Tpfh 10 - - ns

Duty ratio - - 50 - %

Pulse width Tpws 500 2000 - ns

Rise and fall time Tprs, Tpfs 10 - - ns

Duty ratio - - 50 - %

RG Pulse width Tpwr 100 - - ns

Rise and fall time Tprr, Tpfr 5 - - ns

TG – P1H Overlap time Tovr 3 - - s

*18: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

KMPDC0127EC

CCD area image sensor S7030/S7031 series

Dimensional outline (unit: mm)

S7030-0906/-0907 S7030-1006/-1007

4.4 ± 0.44

4.8 ± 0.49

2.35 ± 0.15

3.75 ± 0.44

Photosensitive surface

1st pin indication pad

3.0

(24 ×) 0.5 ± 0.05

Window 16.3*

8.2*

34.0 ± 0.34

2.54 ± 0.13

22.9 ± 0.30

22.4 ± 0.30

Photosensitive area

12.29

S7030-0906: A=1.392

S7030-0907: A=2.928

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics” graph

3.0

Photosensitive surface

4.4 ± 0.44

2.35 ± 0.15

4.8 ± 0.49

3.75 ± 0.44

Window 28.6*

22.9 ± 0.30

22.4 ± 0.30

Photosensitive area 24.58

8.2*

44.0 ± 0.44

2.54 ± 0.13

1st pin indication pad

S7030-1006: A=1.392

S7030-1007: A=2.928

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics” graph

(24 ×) 0.5 ± 0.05

112

KMPDA0046EF

KMPDA0047EG

S7031-0906S/-0907S

Window 16.3*

8.2*

34.0 ± 0.34

50.0 ± 0.30

2.54 ± 0.13

22.9 ± 0.30

19.0

4.0

42.0

22.4 ± 0.30

7.3 ± 0.63

1.0

7.7 ± 0.68

6.65 ± 0.63

4.89 ± 0.15

Photosensitive area

12.29

Photosensitive surface

1st pin indication pad

3.0

TE-cooler

S7031-0906S: A=1.392

S7031-0907S: A=2.928

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics” graph

(24 ×) 0.5 ± 0.05

24 13

KMPDA0048EG

CCD area image sensor S7030/S7031 series

Pin connections

no.

S7030 series S7031 series Remark

(standard operation)

Symbol Function Symbol Function

1 RD Reset drain RD Reset drain +12 V

2 OS Output transistor source OS Output transistor source

RL=22 kΩ

3 OD Output transistor drain OD Output transistor drain +20 V

4 OG Output gate OG Output gate +3 V

5 SG Summing gate SG Summing gate Same pulse as P2H

6- -

7- -

8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2

9 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1

10 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) -8 V

11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) -8 V

12 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD

13 TG*19 Transfer gate TG*19 Transfer gate Same pulse as P2V

14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2

15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1

16 - Th1 Thermistor

17 - Th2 Thermistor

18 - P- TE-cooler-

19 - P+ TE-cooler+

20 SS Substrate (GND) SS Substrate (GND) GND

21 ISV Test point (vertical input source) ISV Test point (vertical input source) Connect to RD

22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) -8 V

23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) -8 V

24 RG Reset gate RG Reset gate

*19: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.

S7031-1006S/-1007S

(24 ×) 0.5 ± 0.05

7.3 ± 0.63

1.0

3.0

6.65 ± 0.63

4.89 ± 0.15

Photosensitive surface

7.7 ± 0.68

1st pin indication pad

4.0

19.0

22.4 ± 0.30

22.9 ± 0.30

44.0 ± 0.44

52.0

60.0 ± 0.30

2.54 ± 0.13

Window 28.6*

Photosensitive area 24.58

8.2*

S7031-1006S: A=1.392

S7031-1007S: A=2.928

TE-cooler

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics” graph

112

1324

KMPDA0049EH

CCD area image sensor S7030/S7031 series

KMPDB0179EA

KMPDB0111EB

S7031-0906S/-0907S S7031-1006S/-1007S

Voltage (V)

CCD temperature (°C)

-40

-30

2.01.51.0

Current (A)

0.50

-20

-10

(Typ. Ta=25 °C)

Voltage vs. Current

CCD temperature vs. Current

Voltage (V)

CCD temperature (°C)

-40

-30

432

Current (A)

-20

-10

(Typ. Ta=25 °C)

Voltage vs. Current

CCD temperature vs. Current

Specifications of built-in temperature sensor

A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the

thermistor resistance and absolute temperature is expressed by the following equation.

RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)

RT1: Resistance at absolute temperature T1 [K]

RT2: Resistance at absolute temperature T2 [K]

BT1/T2: B constant [K]

The characteristics of the thermistor used are as follows.

R298=10 kΩ

B298/323=3450 K

KMPDB0178EA

10 kΩ

220 240 260

Temperature (K)

Resistance

280 300

100 kΩ

1 MΩ(Typ. Ta=25 °C)

Speciﬁ cations of built-in TE-cooler (Typ. vacuum condition)

Parameter Symbol Condition S7031-0906S/-0907S S7031-1006S/-1007S Unit

Internal resistance Rint Ta=25 °C 2.5 1.2 Ω

Maximum current*20 Imax Tc*21=Th*22=25 °C 1.5 3.0 A

Maximum voltage Vmax Tc*21=Th*

=25 °C 3.8 3.6 V

Maximum heat absorption

*23 Qmax 3.4 5.1 W

Maximum temperature

of heat radiating side -7070°C

*20: If the current greater than this value ﬂ ows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule

heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable

operation, the supply current should be less than 60% of this maximum current.

*21: Temperature of the cooling side of thermoelectric cooler

*22: Temperature of the heat radiating side of thermoelectric cooler

*23: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum

current is supplied to the unit.

CCD area image sensor S7030/S7031 series

Precautions (electrostatic countermeasures)

Element cooling/heating temperature incline rate

・

Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an

earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

・

Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

・

Provide ground lines or ground connection with the work-ﬂ oor, work-desk and work-bench to allow static electricity to discharge.

・

Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempera-

ture change) for cooling or allowing the CCD to warm back is less than 5 K/minute.

Multichannel detector heads C7040, C7041

Features

C7040: for S7030 series

C7041: for S7031 series

Area scanning or full line-binnng operation

Readout frequency: 250 kHz

Readout noise: 20 e- rms

ΔT=50 °C (ΔT changes by cooling method.)

Input Symbol Value

Supply voltage

VD1

VA1+

VA1-

VA2

VD2

+5 Vdc, 200 mA

+15 Vdc, +100 mA

-15 Vdc, -100 mA

+24 Vdc, 30 mA

+5 Vdc, 30 mA (C7041)

+5 Vdc, 2.5 A (C7041)

+12 Vdc, 100 mA (C7041)

Master start φms HCMOS logic compatible

Master clock φmc HCMOS logic compatible,

1 MHz

Related information

Precautions

 Notice

 Image sensors/Precautions

Technical information

 FFT-CCD area image sensor/Technical information

www.hamamatsu.com/sp/ssd/doc_en.html

CCD area image sensor S7030/S7031 series

Cat. No. KMPD1023E18 Aug. 2012 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of August, 2012.

Connection example

AC cable (100 to 240 V;

included with C7557-01

)

PC [Windows 2000/XP/Vista, 7 (32-bit)]

C7557-01

USB cable

(included with

C7557-01)

Image sensor

Multichannel

detector head

(USB 2.0)

Shutter*

timing pulse

Dedicated cable

(included with C7557-01)

* Shutter, etc. are not available.

Trig.

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KACCC0402EC

Multichannel detector head controller C7557-01

Features

For control of multichannel detector head and data

acquisition

Easy control and data acquisition using supplied

software via USB interface