10BQ040PbF
Bulletin PD-20784 07/04
2www.irf.com
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.53 V @ 1A
* See Fig. 1 0.70 V @ 2A
0.49 V @ 1A
0.64 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
* See Fig. 2 4 mA TJ = 125 °C
CTTypical Junction Capacitance 80 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10BQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 112 °C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive 430 A 5µs Sine or 3µs Rect. pulse
Surge Current 45 10ms Sine or 6ms Rect. pulse
EAS Non- Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Parameters 10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
Part number 10BQ040PbF
TJMax. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL Max. Thermal Resistance Junction 36 °C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1F
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
< thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot 1
dTj Rth( j-a)