MOTOROLA SC {XSTRS/R FF 84 DE e3u7254 O079b07 QO i 6367254 MOTOROLA SC CXSTRS/R F) MOTOROLA m= SEMICONDUCTOR xy TECHNICAL DATA 89D 79607 D T~-S7-07 MBD101 = MMBD101 MMBD101L SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) ...- designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits, Supplied in an inexpensive plastic package for low-cost, high-volume con- sumer requirements. Also available in Surface Mount package. @ The Rugged Schottky Barrier Construction Provides Stable Characteristics by Eliminating the Cat-Whisker" Contact Low Noise Figure 6.0 dB Typ @ 1.0 GHz Very Low Capacitance Less Than 1.0 pF @ Zero Volts High Forward Conductance 0.50 Volts (Typ) @ Ip = 10 mA MAXIMUM RATINGS MBD101_|MMBD101,L Rating Symbol Value Unit Reverse Voltage VR 4.0 Volts Forward Power Dissipation @ Ta = 25C| PF 280 | 200 mW Derate above 25C 28 2.0 mWwrc Junction Temperature Ty +125 C Storage Temperatura Range Tstg 65 to +150 i 04 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) SILICON HOT-CARRIER UHF MIXER DIODE Ze CASE 318-02 CASE 182-02 TO-236AA T0-226AC SOT-23 ToL D sre R Feecr AA c ew N STYLE 1: PIN }, ANODE 2 CATHODE CASE 182-02 g St TO-226AC = = ANJEDEC dinesont ths prevrerers yo Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage ViBRIR 4.0 5.0 ~ Volts (IR = 10 pA) Diode Capacitance CT - 0.88 1.0 pF (VR =0, f= 1.0 MHz, Note 1) Forward Voltage (1} Ve - 0.60 0,60 Volts (le = 10 mA} Noise Figure NE - 6.0 _ d (f = 1,0 GHz, Note 2) Reverse Leakage ig ~ 0.02 0.25 BA (VR =3.0V) STV a. PLT ANODE 2. NO CONNECTION 2 CATHODE CASE 318-02 TO-236AA SOT-23 "Lew Prot = CASE 31803 TO ZMAS MOTOROLA RF DEVICE DATA