BGD702/09 - NXP Semiconductors

DATA SH EET

Product specification

Supersedes data of 2001 Nov 02 2001 Nov 27

DISCRETE SEMICONDUCTORS

BGD702

750 MHz, 18.5 dB gain

power doubler amplifier

dbook, halfpage

M3D252

2001 Nov 27 2

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

FEATURES

Excellent linearity

Extremely low nois e

Silicon nitride passivation

Rugged construction

Gold metallization ensures excellent reliability.

APPLICATIONS

CATV systems operating in the 40 to 750 MHz

frequency ra nge.

DESCRIPTION

Hybrid amplifie r module in a SOT115J pa ckage ope rating

at a supply voltage of 24 V (DC).

PINNING - SOT115J

PIN DESCRIPTION

1 input

2, 3 common

5+V

7, 8 common

9 output

Fig.1 Simplified outline.

handbook, halfpage

789

2351

Side view

MSA319

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Ra ting System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Gppower gain f = 50 MHz 18 19 dB

f=750MHz 18.5 dB

Itot total current consumption (DC) VB=24V 435 mA

SYMBOL PARAMETER MIN. MAX. UNIT

ViRF input voltage 65 dBmV

Tstg storage temperature 40 +100 C

Tmb operating mounting base temperature 20 +100 C

2001 Nov 27 3

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

CHARACTERISTICS

Table 1 Bandwidth 40 to 750 MHz; VB=24V; T

mb =35C; ZS=Z

L=75

Notes

1. fp= 55.25 MHz; Vp= 44 dBmV;

fq=691.25MHz; V

q=44dBmV;

measured at fp+f

q= 746.5 MHz.

2. Measured according to DIN45004B:

fp=740.25MHz; V

p=V

fq=747.25MHz; V

q=V

o6dB;

fr= 749.25 MHz; Vr=V

o6dB;

measured at fp+f

qfr= 738.25 MHz.

3. The modules normally op erate at VB= 24 V, but are able to withstand supply transients up to VB=30V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 50 MHz 18 18.5 19 dB

f = 750 MHz 18.5 19.7 dB

SL slope cable equivalent f = 40 to 750 MHz 0.2 1.3 2 dB

FL flatness of frequency response f = 40 to 750 MHz 0.2 0.5 dB

s11 input return losses f = 40 to 80 MHz 20 27 dB

f = 80 to 160 MHz 19 30 dB

f=160to320MHz 18 29 dB

f=320to640MHz 17 22 dB

f=640to750MHz 16 21 dB

s22 output return losses f = 40 to 80 MHz 20 23 dB

f = 80 to 160 MHz 19 24 dB

f=160to320MHz 18 23 dB

f=320to640MHz 17 21 dB

f=640to750MHz 16 21 dB

s21 phase response f = 50 MHz 45 +45 deg

CTB composite triple beat 110 channels flat; Vo=44dBmV;

measured at 745.25 MHz

59 58 dB

Xmod cross modulation 110 channels flat; Vo=44dBmV;

measured at 55.25 MHz

64 62 dB

CSO composite second order distortion 110 channels flat; Vo=44dBmV;

measured at 746.5 MHz

63 58 dB

d2second order dist ortion note 1 78 68 dB

Vooutput volt a ge dim =60 dB; note 2 61 64 dBmV

NF noise figure f = 50 MHz 4.5 5.5 dB

f=450MHz 6.5 dB

f=550MHz 6.5 dB

f=600MHz 7dB

f=750MHz 6.5 8.5 dB

Itot total current consumption (DC) note 3 425 435 mA

2001 Nov 27 4

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

Table 2 Bandwidth 40 to 6 00 M Hz ; V B=24V; T

mb =35C; ZS=Z

L=75

Notes

1. fp= 55.25 MHz; Vp= 44 dBmV;

fq=541.25MHz; V

q=44dBmV;

measured at fp+f

q= 596.5 MHz.

2. Measured according to DIN45004B:

fp=590.25MHz; V

p=V

fq= 597.25 MHz; Vq=V

o6dB;

fr= 599.25 MHz; Vr=V

o6dB;

measured at fp+f

qfr= 588.25 MHz.

3. The modules normally op erate at VB= 24 V, but are able to withstand supply transients up to VB=30V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 50 MHz 18 18.5 19 dB

f = 600 MHz 18.5 19.4 dB

SL slope cable equivalent f = 40 to 600 MHz 0.2 2dB

FL flatness of frequency response f = 40 to 600 MHz 0.3 dB

s11 input return losses f = 40 to 80 MHz 20 27 dB

f = 80 to 160 MHz 19 30 dB

f=160to320MHz 18 29 dB

f=320to600MHz 17 22 dB

s22 output return losses f = 40 to 80 MHz 20 23 dB

f = 80 to 160 MHz 19 24 dB

f=160to320MHz 18 23 dB

f=320to600MHz 17 21 dB

s21 phase resp onse f = 50 MHz 45 +45 deg

CTB composite triple beat 85 channels flat; Vo=44dBmV;

measured at 595.25 MHz

66 65 dB

Xmod cross modulation 85 channels flat; Vo=44dBmV;

measured at 55.25 MHz

66 65 dB

CSO composite second order distortion 85 channels flat; Vo=44dBmV;

measured at 596.5 MHz

68 60 dB

d2second order distortion note 1 80 70 dB

Vooutput voltage dim =60 dB; note 2 64 67 dBmV

NF noise figure see Table 1 dB

Itot total current consumption (DC) note 3 425 435 mA

2001 Nov 27 5

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

Table 3 Bandwidth 40 to 5 50 M Hz ; V B=24V; T

mb =35C; ZS=Z

L=75

Notes

1. fp= 55.25 MHz; Vp= 44 dBmV;

fq=493.25MHz; V

q=44dBmV;

measured at fp+f

q= 548.5 MHz.

2. Measured according to DIN45004B:

fp=540.25MHz; V

p=V

fq=547.25MHz; V

q=V

o6dB;

fr= 549.25 MHz; Vr=V

o6dB;

measured at fp+f

qfr= 538.25 MHz.

3. The modules normally op erate at VB= 24 V, but are able to withstand supply transients up to VB=30V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 50 MHz 18 18.5 19 dB

f = 550 MHz 18.5 19.3 dB

SL slope cable equivalent f = 40 to 550 MHz 0.2 2dB

FL flatness of frequency response f = 40 to 550 MHz 0.3 dB

s11 input return losses f = 40 to 80 MHz 20 27 dB

f = 80 to 160 MHz 19 30 dB

f=160to320MHz 18 29 dB

f=320to550MHz 17 22 dB

s22 output return losses f = 40 to 80 MHz 20 23 dB

f = 80 to 160 MHz 19 24 dB

f=160to320MHz 18 23 dB

f=320to550MHz 17 21 dB

s21 phase response f = 5 0 MHz 45 +45 deg

CTB composite triple beat 77 channels flat; Vo=44dBmV;

measured at 547.25 MHz

68 67 dB

Xmod cross modulation 77 chan nels flat; Vo=44dBmV;

measured at 55.25 MHz

68 67 dB

CSO composite second order distortion 77 channels flat ; Vo=44dBmV;

measured at 548.5 MHz

68 62 dB

d2second order distortion note 1 81 72 dB

Vooutput voltage dim =60 dB; note 2 64.5 68 dBmV

NF noise figure see Table 1 dB

Itot total current consumption (DC) note 3 425 435 mA

2001 Nov 27 6

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

Table 4 Bandwidth 40 to 4 50 M Hz ; V B=24V; T

mb =35C; ZS=Z

L=75

Notes

1. fp= 55.25 MHz; Vp= 46 dBmV;

fq=391.25MHz; V

q=46dBmV;

measured at fp+f

q= 446.5 MHz.

2. Measured according to DIN45004B:

fp=440.25MHz; V

p=V

fq=447.25MHz; V

q=V

o6dB;

fr= 449.25 MHz; Vr=V

o6dB;

measured at fp+f

qfr= 438.25 MHz.

3. The modules normally op erate at VB= 24 V, but are able to withstand supply transients up to VB=30V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 50 MHz 18 18.5 19 dB

f = 450 MHz 18.5 19.2 dB

SL slope cable equivalent f = 40 to 450 MHz 0.2 2dB

FL flatness of frequency response f = 40 to 450 MHz 0.3 dB

s11 input return losses f = 40 to 80 MHz 20 27 dB

f = 80 to 160 MHz 19 30 dB

f=160to320MHz 18 29 dB

f=320to450MHz 17 22 dB

s22 output return losses f = 40 to 80 MHz 20 23 dB

f = 80 to 160 MHz 19 24 dB

f=160to320MHz 18 23 dB

f=320to450MHz 17 21 dB

s21 phase response f = 5 0 MHz 45 +45 deg

CTB composite triple beat 60 channels flat; Vo=46dBmV;

measured at 445.25 MHz

68 dB

Xmod cross modulation 60 chan nels flat; Vo=46dBmV;

measured at 55.25 MHz

65 dB

CSO composite second order distortion 60 channels flat ; Vo=46dBmV

measured at 446.5 MHz

65 dB

d2second order distortion note 1 75 dB

Vooutput voltage dim =60 dB; note 2 67 dBmV

NF noise figure see Table 1 dB

Itot total current consumption (DC) note 3 425 435 mA

2001 Nov 27 7

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

PACKAGE OUTLINE

UNIT A2

max. cee

max. q1q2U2

U1W

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 20.8 9.5 0.51

0.38 0.25 27.2 2.04

2.54 13.75 2.54 5.08 12.7 8.8 4.15

3.85 2.4 38.1 25.4 10.2 4.2 44.75

44.25 8.2

7.8 0.25 0.1 3.8

6-32

UNC

0.7

DIMENSIONS (mm are the original dimensions)

SOT115J

0 5 10 mm

scale

max. D

max. L

min.

max. Z

max.

Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;

2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J

U1q

Z p

78923

Wee1

xMB

yMB

04-02-04

10-06-18

yMB

2001 Nov 27 8

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

DATA SHEET STATUS

Notes

1. Please consult the most rec ently issued document befor e initiating or completing a design.

2. The product s tatus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This doc ume nt contains data from the objective specification for pro duc t

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

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Limited warranty and liability  Information in this

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However, NXP Semiconduc tors does not give any

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the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

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Notwithstanding any damages that customer might incur

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accordance with the Terms and conditio ns of commercial

sale of NXP Semiconductors.

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reserves the right to make changes to in formation

published in this doc ume nt, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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of an NXP Semiconducto rs product can reasonably be

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accepts no liability for inclusion and/or use of NXP

Semiconductor s pr od ucts in such equipment or

application s and therefore such inclusion and /o r use is at

the customer’s own risk.

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any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of

their applications and products using NXP

Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

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products using NXP Semiconductors products in order to

avoid a default of the applic ations and the products or of

the application or use by customer’s third party

customer(s). NXP does not ac cept any liability in this

respect.

2001 Nov 27 9

NXP Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler

amplifier BGD702

Limiting values  Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ratings only and

(proper) operat ion of the device at these or any other

conditions above those given in the Recommended

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the quality and

reliability of the device.

Terms and conditions of commercial sale  NXP

Semiconductors products are sold subje ct to the general

terms and conditio ns of commercial sale, as published at

http://www.nxp.com/profile/terms, unless other wise

agreed in a valid written individual agreeme nt. In case an

individual agreeme nt is co nc luded only the terms and

conditions of the resp ective agreement shall apply. NXP

Semiconductors hereby expressly objects to apply ing the

customer’s general terms and conditions with regard to the

purchase of NXP Semicon ductors produc ts by customer.

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national auth or itie s.

Quick refer ence data  The Quick reference data is an

extract of th e product data given in the Li miting values and

Characteristics sections of this document, and as su ch is

not complete, exhaus tive or legally binding.

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sheet expressly states that this specific NXP

Semiconductors product is au tomotive qualified, the

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qualified nor te sted in accorda nce with automot ive testing

or application requirements. NXP Semiconductors accepts

no liability for inclusion and/or use of non-automotive

qualified prod ucts in automotive equip men t or

applications.

In the event that customer uses the product for design-in

and use in automotive applications to automotive

specifications and standards, customer (a) shall use the

product without NXP Semiconductors’ warranty of the

product for suc h aut omo tive applications, use and

specifications, and (b) whenever customer uses the

product for automotive applications beyond NXP

Semiconductors’ specifications such use shall be solely at

customer’s own ris k, an d (c) customer fully inde mnifies

NXP Semiconductors for an y liability, damages or failed

product clai ms r esult ing fr om cus to mer d esi gn an d us e of

the product for automotive ap plic ations beyond NXP

Semiconductors ’ st andard warranty and NXP

Semiconductors’ product specifications.

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product

solutions that leverage its leading RF, Analog, Power Management,

Interface, Security and Digital Processing expertise

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this do cum en t d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd re liable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No cha ng es were made to the technic al co ntent, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 613518/07/pp10 Date of release: 2001 Nov 27 Document order number: 9397 750 09068