TDE1890
TDE1891
2A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
2A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTA G E RANG E
INTERN AL CURRENT LIMITING
THERMA L SHUTDOW N
OPEN GROUND PROTEC TION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO V S - 50V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECT ION
TWO DIAGNOSTIC OU TPUTS
OUTP UT STATUS LED DRIVE R
DESCRIPTION
The TDE1890/1891 is a monolithic Intelligent
Power Switch in Multipower BCD Technology, for
driving inductive or resistive loads. An internal
Clamping Diode enables the fast demagnetization
of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device ex-
tremely rugged and specially suitable for indus-
trial automation applications.
September 2003
®
MULTIWATT11 MULTIWATT11V PowerSO20
(In line)
ORDERING NUMBERS:
TDE1891L TDE1890V TDE1890D
TDE1891V
BLOCK DIAGRAM
MULTIPOWER BCD TECHNOLOGY
1/12
PIN C ONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VS Supply Voltage (Pin 10) (TW < 10ms) 50 V
VS – VOSupply to Output Differential Vol tage. See also VCl (Pins 10 - 9) internally limited V
ViInput Voltage (Pins 3/4) -10 to VS +10 V
ViDifferential Input Voltage (Pins 3 - 4) 43 V
IiInput Current (Pins 3/4) 20 mA
IOOutput Current (Pin 9). See also ISC (Pin 9) internally limited A
Ptot Power Dissipation. See also THERMAL CHARACTERISTICS. internally limited W
Top Operating Temperature Range (Tamb) -25 to +85 °C
Tstg Storage Temperature -55 to 150 °C
EIEnergy Induct. Load TJ = 85°C1J
THERMAL DATA
Symbol Description Multiwatt PowerSO20 Unit
Rth j-case Thermal Resistance Junction-case Max. 1.5 1.5 ÉC/W
Rth j-amb Thermal Resistance Junction-ambient Max. 35 – ÉC/W
1
2
3
4
5
6
7
9
10
11
8
OUTPUT
SUPPLY VOLTAGE
OUTPUT
N.C.
N.C.
GND
OUTPUT STATUS
INPUT -
INPUT +
DIAGNOSTIC 2
DIAGNOSTIC 1
D93IN022
GND
OUTPUT
OUTPUT
N.C.
SUPPLY VOLTAGE
N.C.
SUPPLY VOLTAGE
OUTPUT
OUTPUT N.C.
N.C.
DIAGNOSTIC 1
N.C.
DIAGNOSTIC 2
INPUT +
INPUT -
OUTPUT STATUS
GND1
3
2
4
5
6
7
8
9
18
17
16
15
14
12
13
11
19
10
20
GND GND
D93IN021
Note: Output pins must be must be connected externally to the package to use all leads for the output current (Pin 9 and 11 for Multiwatt
package, Pin 2, 3, 8 and 9 for PowerSO20 package).
TDE1890 - TDE18 91
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ELECTRICA L CHARACTERI STICS (V S = 24V; Tamb = –25 to +85°C, unles s otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
Vsmin Supply Voltage for Valid
Diagnostics Idiag > 0.5mA ; Vdg1 = 1.5V 9 35 V
VsSupply Voltage (operative) 18 24 35 V
IqQuiescent Current
Iout = Ios = 0 Vil
Vih 3
57
8mA
mA
Vsth1 Undervoltage Threshold 1 (See fig. 1), Tamb = 0 to +85°C11 V
V
sth2 Undervoltage Threshold 2 15.5 V
Vshys Supply Voltage Hysteresis 1 V
Isc Short Circuit Current VS = 18 to 35V; RL = 2Ω2.6 5 A
Vdon Output Voltage Drop Iout = 2.0A Tj = 25°C
Tj = 125°C
Iout = 2.5A Tj = 25°C
Tj = 125°C
360
575
440
700
500
800
575
920
mV
mV
mV
mV
Ioslk Output Leakage Current Vi = Vil ; Vo = 0V 500 µA
Vol Low State Out Voltage Vi = Vil ; RL = ∞0.8 1.5 V
Vcl Internal Voltage Clamp (VS - VO)I
O
= 1A
Single Pulsed: Tp = 300µs48 53 58 V
Iold Open Load Detection Current Vi = Vih; Tamb = 0 to +85°C 0.5 9.5 mA
Vid Common Mode Input Voltage
Range (Operative) VS = 18 to 35V,
VS - Vid < 37V –7 15 V
Iib Input Bias Current Vi = –7 to 15V; –In = 0V –250 250 µA
Vith Input Threshold Voltage V+In > V–In 0.8 1.4 2 V
Viths Input Threshold Hysteresis
Voltage V+In > V–In 50 400 mV
Rid Diff. Input Resistance 0 < +In < +16V ; –In = 0V
–7 < +In < 0V ; –In = 0V 400
150 KΩ
KΩ
Iilk Input Offset Current V+In = V–In +Ii
0V < Vi <5.5V –Ii –20
–75 –25 +20 µA
µA
–In = GND +Ii
0V < V+In <5.5V –Ii –250 +10
–125 +50 µA
µA
+In = GND +Ii
0V < V–In <5.5V –Ii –100
–50 –30
–15 µA
µA
Voth1 Output Status Threshold 1
Voltage (See fig. 1) 11.5 V
Voth2 Output Status Threshold 2
Voltage (See fig. 1) 8.5 V
Vohys Output Status Threshold
Hysteresis (See fig. 1) 0.7 V
Iosd Output Status Source Current Vout > Voth1 ; Vos = 2.5V 2 4 mA
Vosd Active Output Status Driver
Drop Voltage VS – Vos ; Ios = 2mA
Tamb = -25 to +85°C5V
I
oslk Output Status Driver Leakage
Current Vout < Voth2 ; Vos = 0V
VS = 18 to 35V 25 µA
Vdgl Diagnostic Drop Voltage D1 / D2 = L ; Idiag = 0.5mA
D1 / D2 = L ; Idiag = 3mA 250
1.5 mV
V
Idglk Diagnostic Leakage Current D1 / D2 =H ; 0 < Vdg < Vs
VS = 15.6 to 35V 25 µA
Vfdg Clamping Diodes at the
Diagnostic Outputs.
Voltage Drop to VS
Idiag = 5mA; D1 / D2 = H 2 V
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In)
TDE1890 - TDE1891
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Figure 1
DIAGNOSTIC TRUTH TAB LE
Diagnostic Conditions Input Output Diag1 Diag2
Normal Operation L
HL
HH
HH
H
Open Load Condition (Io < Iold)L
H
L
H
H
L
H
H
Short to VS L
H
H
H
L
L
H
H
Short Circuit to Ground (IO = I SC) (**) TDE1891
TDE1890
H <H (*) H L
HH
LH
HH
H
Output DMOS Open L
HL
LH
LH
H
Overtemperature L
HL
LH
HL
L
Supply Undervoltage (VS < Vsth2)L
H
L
L
L
L
L
L
(*) According to the interventi on of the current limiting block.
(** ) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1891
uses Diag2 to signal such c ondi tion, TD E1890 does not.
SOURCE DRAIN NDMOS DIODE
Symbol Parameter Test Condition Min. Typ. Max. Unit
Vfsd Forward On Voltage @ Ifsd = 2.5A 1 1.5 V
Ifp Forward Peak Current t = 10ms; d = 20% 6 A
trr Reverse Recovery Time If = 2.5A di/dt = 25A/µs 200 ns
tfr Forward Recovery Time 100 ns
THERMAL CHARACTERISTICS
Ø Lim Junction Temp. Protect. 135 150 °C
THThermal Hysteresis 30 °C
SWITCHING CHARACTERISTICS (VS = 24V; RL = 12Ω)
ton Turn on Delay Time 200 µs
toff Turn off Delay Time 40 µs
tdInput Switching to Diagnostic
Valid 200 µs
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In)
TRUE
FALSE
HIGH
LOW
TDE1890 - TDE18 91
4/12
APPLICATION IN FOR MATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 50 and 60V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 1J (at
Tj = 85°C).
To define the m aximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W = Vcl L
RL [Io – Vcl – Vs
RL log
1 + Vs
Vcl – Vs
]
Where:
Vcl = clamp voltage;
L = inductive load;
RL = resistive load;
Vs = supply voltage;
IO = ILOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
If the demagnetization energy exceeds the rated
value, an external clamp between output and +VS
must be externally connected (see fig. 5).
The external zener will be chosen with Vzener
value lower than the internal Vcl minimum rated
value and significantly (at least 10V) higher than
the voltage that is externally supplied to pin 10,
i.e. than the supply voltage.
Alternative circuit solutions can be implemented
to divert the demagnetization stress from the
TDE1890/1, if it exceeds 1J. In all cases it is rec-
ommended that at least 10V are available to de-
magnetize the load in the turn-off phas e.
A clamping circuit connected between ground and
the output pin is not recommended. An interrup-
tion of the connection between the ground of the
load and the ground of the TDE1890/1 would
leave the TDE1890/1 alone to absorb the full
amount of the demagnetization energy.
Figure 2: Inductive Load Equivalent Circuit
TDE1890 - TDE1891
5/12
-25 0 25 50 75 100 125 Tj (˚C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
α
D93IN018
α=RDSON (Tj)
RDSON (Tj=25˚C)
Figure 4: Normalized RDSON vs. Junction
Temperature
Figure 5.
Figure 3: Demagnetization Cycle Waveforms
TDE1890 - TDE18 91
6/12
WORST CONDITION POWER DISSIPATION IN
THE O N -S TA T E
In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur-
rent (and related power), thermal characteristics
of the package and ambient temperature.
At ambient temperature close to upper limit
(+85°C) and in the worst operating conditions, it is
possible that the chip temper ature could increase
so much to make the thermal shutdown proce-
dure untimely intervene.
Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem-
perature. To this end, we should consider the fol-
lowing points:
1) The ON resistance RDSON of the output
NDMOS (the real switch) of the device in-
creases with its temperature.
Experimental results show that silicon resistiv-
ity increases with temperature at a constant
rate, rising of 60% from 25°C to 125°C.
The relationship between RDSON and tem-
perature is therefore:
R DSON = R DSON0 ( 1 + k ) ( T j − 25 )
where:
Tj is the silicon temperature in °C
RDSON0 is RDSON at Tj=25°C
k is the constant rate (k = 4.711 ⋅ 10 −3)
( see fig. 4).
2) In the ON state the power dissipated in the
device is due to three contribu tes:
a) power lost in the switch:
P out = I out 2 ⋅ R DSON (Iout is the output cur-
rent);
b) power due to quiescent current in the ON
state Iq, sunk by the device in addit ion to
Iout: P q = I q ⋅ V s (Vs is the supply voltage);
c) an external LED could be used to visualize
the switch state (OUTPUT STAT US pin).
Such a LED is driven by an internal current
source (delivering Ios) and therefor e, if Vos is
the voltage drop across the LED, the dissi-
pated power is: P os = I os ⋅ ( V s − V os ).
Thus the t otal ON state power co nsumption is
given by:
P on = P out + P q + P os (1)
In the right side of equation 1, the second and
the third element are constant, while the first
one increases with temperature because
RDSON increases as well.
3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device-
ambient (Rth). In steady state conditions, this
parameter relates the power dissipated Pon to
the silicon temperature Tj and the ambient
temperature Tamb:
T j − T amb = P on ⋅ R th (2)
From this relationship, the maximum power
Pon which can be dissipated without exceed-
ing ΘLim at a given ambient temperature
Tamb is:
P on = ΘLi m − T amb
R th
Replacing the expression (1) in this equation
and solving for Iout, we can find t he maximum
current versus ambient temperature relation-
ship:
I outx = √
ΘLim − T amb
R th − P q − P os
R DSONx
where RDSONx is RDSON at Tj=ΘLim. Of
course, Ioutx values are top limited by the
maximum operative current Ioutx (2A n ominal).
From the expression (2) we can also find the
maximum ambient temperature Tamb at which
a given power Pon can be dissipated:
T amb = ΘLim − P on ⋅ R th =
= ΘLim − ( I out 2 ⋅ R DSONx + P q + P os ) ⋅ R th
In particular, this relation is useful to find the
maximum ambient temperature Tambx at
which Ioutx can be delivered:
T ambx = ΘLim − ( I outx 2 ⋅ R DSONx +
+ P q + P os ) ⋅ R th (4)
Referring to application circuit in f ig. 6, let us con-
sider the worst case:
- The supply voltage is at maximum value of in-
dustrial bus (30V instead of the 24V nominal
value). This means also that Ioutx ris es of 25%
(2.5A instead of 2A).
TDE1890 - TDE1891
7/12
- All electrical parameters of the device, c on-
cerning the calculation, are at maximum val-
ues.
- Thermal shutdown threshold is at minimum
value.
Therefore:
Vs = 30V, RDSON0 = 0.23Ω, Iq = 8mA, Ios = 4mA
@ Vos = 2.5V, ΘLim = 135°C
Rthj-amb = 35°C/W
It follows:
Ioutx = 2.5A, RDSONx = 0.386Ω, Pq = 240mW ,
Pos = 110m W
From equation 4 we can see that, without any
heatsink, it is not possible to operate in the ON
steady state at the maximum current value. A
derating curve for this case is reported in fig. 7.
Using an external heatsink, in order t o obtain a to-
tal Rth of 15°C/W, we obtain the derating curve
reported in fig. 8.
0 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
D93IN033
Io
(A)
Tamb (˚C)
Figure 7: Max. Output Current vs. Ambient
Temperature (Multiwatt without
heatsink, Rth j-amb = 35°C/W)
0 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
D93IN020A
Io
(A)
Tamb (˚C)
Figure 8: Max. Output Current vs. Ambient
Temperature (Multiwatt with heatsink,
Rth j-amb = 15°C/W)
+
-
+IN
-IN
D1
D2
CONTROL
LOGIC
Ios LOAD
OUTPUT
OUTPUT STATUSGND
µP POLLING
+Vs
DC BUS 24V +/-25%
D93IN014
Figure 6: Application Circuit
TDE1890 - TDE18 91
8/12
Multiwatt11 V
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037
G 1.45 1.7 1.95 0.057 0.067 0.077
G1 16.75 17 17.25 0.659 0.669 0.679
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.87 0.886
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.191
M1 4.73 5.08 5.43 0.186 0.200 0.214
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
OUTLINE AND
MECHANICAL DATA
TDE1890 - TDE1891
9/12
Multiwatt11 (In-Line)
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037
G 1.57 1.7 1.83 0.062 0.067 0.072
G1 16.87 17 17.13 0.664 0.669 0.674
H1 19.6 0.772
H2 20.2 0.795
L 26.4 26.9 1.039 1.059
L1 22.35 22.85 0.880 0.900
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
OUTLINE AND
MECHANICAL DATA
TDE1890 - TDE18 91
10/12
OUT LINE AND
M E CHANICA L DA TA
e
a2 A
Ea1
PSO20MEC
DETAIL A
T
D
110
1120
E1
E2
h x 45
DETAIL A
lead
slug
a3
S
Gage Plane 0.35
L
DETAIL B
R
DETAIL B
(COPLANARITY)
GC
- C -
SEATING PLANE
e3
b
c
NN
H
BO TTOM VIEW
E3
D1
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.6 0.142
a1 0.1 0.3 0.004 0.012
a2 3.3 0.130
a3 0 0.1 0.000 0.004
b 0.4 0.53 0.016 0.021
c 0.23 0.32 0.009 0.013
D (1) 15.8 16 0.622 0.630
D1 9.4 9.8 0.370 0.386
E 13.9 14.5 0.547 0.570
e 1.27 0.050
e3 11.43 0.450
E1 (1) 10.9 11.1 0.429 0.437
E2 2.9 0.114
E3 5.8 6.2 0.228 0.244
G 0 0.1 0.000 0.004
H 15.5 15.9 0.610 0.626
h 1.1 0.043
L 0.8 1.1 0.031 0.043
N 8˚ (typ.)
S 8˚ (max.)
T 10 0.394
(1) “D and E1” do not include mold flash or protusions.
- Mo l d flash or protus io ns shall not excee d 0.15m m (0.006”)
- Critical dimen sions: “E”, “G” an d “a3”.
PowerSO20
0056635
JEDEC MO-166
Weight:
1.9gr
TDE1890 - TDE1891
11/12
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