P27128 fase AA vt YD HE = rd KR h A/a eS GE if Bl H 4 TAAC | TCAC | TOH| TOE | TOD VDD | T DD/STANDBY VIL VIH | Ci VOL/ I VOL VOH/IVOH | Co CC) max | max | max | max | max max min | max max. min max [typ} (ns) | (ns) | (ns) | (ns) | (ns) W) (mA) ) () | (pF) | W/mA) (V/mA) (pF) 4m2701028-120 AMD O~70 | 120] 120 0 50 36 4.5-~5. 5 -/1.0 0.8 2.0] 126 0.45/72. 1 2.4/0.4 8 Am276 1028-125 AMD Q~70} 120] 120 0 50 5 4. 75~5. 25 -/L.O 0.8 2.0] 12" 0.4572. 1 2.4/0.4 8 Am2701028- 150 AMD O~70} 150| 150 a 65 50 4.55.5 -/i0 0.8 2.0] 12 0. 45/2. 1 2.4/0.4) 8 Am27 1028-155 AMD O~70} 150] 150 0 65 50 4. 75~-5. 25 /L0 0.8 2.0] 12" 0.4572. 1 2.4/0.4 8+ Am27C 1028-200 AMD O~70 | 200} 200 0 78 55 4. S-~5. 5 ALO 0.8 2.0] 12 0.45/2. 1 2.4/0.4 {8+ Am270 1028-205 AMD O~70} 200} 200 0 vi 55 4. 75~5. 25 -/i.0 0.8 2.0] 12* 0. 45/2. 1 2.4/0.4 8e Am27C1028-250 AMD O~70} 250} 250 G} 100 60 4, 5-~5.5 -/L.0 0.8 2.0} 12* 0. 45/2. 1 2.4/0.4) 8 Am27C1028- 255 AMD O~70} 250] 250 0} 106 60 4. 75~-5. 25 /LO 0.8 2.0} 12 0, 45/2. 1 2.44.4) 8 4m27C1028- 300 AMD O~70} 300 | 300 Qj} 120 75 4.5~5.5 ~/1.0 0.8 2.0} 12% 0, 45/2. 1 2.4/0.4] 8+ Am2701028- 305 AMD O~70} 300} 300 0} 120 78 4. 75~-5, 25 ~/1.0 0.8 2.04 12* 0. 45/2. 1 2.4/0.4] 8+ CAT27128A~15 CATALYST O~70] 150} 150 60 50 4. 75~-5. 25 109/35 0.8 24 0. 45/2.1 2.4/0.4 CAT27128A~20 CATALYST O~70} 200) 200 75 60 4, 75~-5. 25 100/35 0.8 24 0. 45/2. 1 2.4/0.4 CAT27128A-25 CATALYST O~70} 250] 250 100 70 4, 75~5, 25 100/35 0.8 24 0. 45/2. 1 2.4/0.4 HN27128AP~20 HITACHI O~70} 200; 200 0 55 4, 75~-5. 25 100/35 0.8 2.9 6 0, 45/2. 1 2.4/0.4 12 HN27128AP~20 HITACHI O~70} 200! 200 0} 75 55 4, 75~-5. 25 100/35 0.8 2.0 4s 0, 49/2. 1 2.4/0.4) 8 HN27128AP~25 HITACHI O~70} 250 | 250 0 60 4, 75~-5, 25 100/35 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 HN27128AP-25 HITACHI O~70} 250] 250 0} 100 60 4, 75~5, 25 100/35 0.8 2.0 4s 9, 4572.1 2.4/0.4 8 HN27128AP-30 HITACHI O~70} 300] 300 0 105] 4. 75~5. 25 100/35 0.8 2.0 6 0. 49/2.1 2.4/0.4 12 HN4827128P-25 HITACHI O~70} 250} 250 0 60 4, 75~5, 25 100/35 0.8 2.0 & 0, 45/2. 1 2.4/0.4 12 HN4827128P-30 HITACHI O~70} 300] 300 0 105] 4. 75-~~5. 25 100/35 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 LHS7128/N-25 SHARP O~70} 250] 250 0; 75 65 4.5-~5,5 30/0. 1 08 2.0 a 0. 45/2. 1 2.4/0.4] 8 MSM27128P MITSUBISHI O~70 | 250] 250 0 85 100/45 0.8 2.0 6 0. 45/2. 1 2.4/0.4 12 NMC270128BN120 NS O~70} 120] 120 0 40 30/1 0.8 2 10 0, 4/2. 1 3.5/2.5 10 NMC27C 128BN120 NS O~70} 120} 120 0 50 40 30/1 0.8 2 5* 0. 4/2. 1 3.5/2.5 8+ NMC270128BN150 NS O~70; 150] 150 0; 60 50 30/1 0.8 2 5* 0. 4/2. 1 3.5/2.5 | 8 NMC27C128BN150 NS O~70) 150] 150 0 50 30/1 08 2 10 0.4/2.1 3.5/2.5 10 NWC27C 128BN200 NS O~70} 200} 200 GO| 75 55 30/1 0.8 2 5+ 0.4/2.1 3.5/2.5] 8 NMC27C128BN200 NS Q~70} 200] 200 0 55 30/1 0.8 2 10 0, 472. 1 3.5/2.5 10 NMC27C128BN250 NS O~70| 250} 250 0 60 30/1 0.8 2 10 0.4/2. 1 3.5/2.5 10 NMC27C128BN250 NS O~70 | 250] 250 0} 100 60 30/1 0.8 2 5+ 0.4/2.1 3.5/2.5 | 8 TMM24128AP/AF TOSHIBA Q~70 | 200} 200 0 60 4, 757-5, 25 100/30 0.8 2.0 6 0.4/2.1 2.4/0.4 12 uPD2728C NEC O~70} 250] 250} 100 85) 4. 75~-5. 25 100/25 0.8 2.0 8 0. 45/2. 1 2.4/0.4 14128K nMOS One Time EPROM (16,3848) 28PIN Ory ee Oe @7ayv7h Ver (1 @ 27128 > oT est TN. =: hod Hails EPROM?E 2 TCR EPROM, 3 512 x 32*8 12 @@ P27128 (Intel). 1 ye (131072) Ao~Ars ROM JL > a - i g LLIB we a OQ_4 DOo f1](LSB) & DO; [iJ] OE S | | PNY TP DO2 dL Vss [4] 8 DO ~ DO; ORR ik Voo: +5 V Pin28 5, Pinl4 Vss(GND) Fin @ READ (OE=L) @ READ (CE=L) waite AomAns roma XY AK | po ah te CE | OE H x High -Z Stand by L H High-Z | Operating L L DO Operating PGM= Vin