HMC941A v04.0818 ATTENUATORS - CHIP 1 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz Typical Applications Features The HMC941A is ideal for: 0.5 dB LSB Steps to 15.5 dB * Fiber Optics & Broadband Telecom Single Positive Control Line Per Bit * Microwave Radio & VSAT 0.5 dB Typical Bit Error High Input IP3: +45 dBm * Military Radios, Radar & ECM Die Size: 2.29 mm x 0.96 mm x 0.1 mm * Space Applications Functional Diagram General Description The HMC941A die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 30 GHz, the insertion loss is less than 4 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at less than 0.5 dB typical step error with an IIP3 of +45 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. Electrical Specifications, TA = +25 C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V Parameter Frequency (GHz) Typ. Max. Units 0.1 - 18.0 GHz 18.0 - 30.0 GHz 3.1 4.2 4.3 5.1 dB dB Attenuation Range 0.1 - 30.0 GHz 15.5 dB Return Loss (RF1 & RF2, All Atten. States) 0.1 - 30.0 GHz 12 dB Insertion Loss Min. Attenuation Accuracy: (Referenced to Insertion Loss) 0.5 - 7.5 dB States 8 - 15.5 dB States 0.1 - 30.0 GHz 0.1 - 30.0 GHz (0.3 + 4% of Atten. Setting )Max (0.3 + 5% of Atten. Setting) Max Input Power for 0.1 dB Compression 0.1 - 0.5 GHz 0.5 - 30.0 GHz 22 26 dBm dBm Input Third Order Intercept Point (Two-Tone Input Power= +8 dBm Each Tone) 0.1 - 0.5 GHz 0.5 - 30.0 GHz 45 43 dBm dBm Switching Characteristics 0.1 - 30.0 GHz 35 50 ns ns tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) 1-1 dB dB Idd 0.1 - 30.0 GHz 3 5 7 mA Iss 0.1 - 30.0 GHz -4 -6 -8 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC941A v04.0818 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Normalized Attenuation (Only Major States are Shown) NORMALIZED ATTENUATION (dB) INSERTION LOSS (dB) 0 -1 -2 -3 -4 -5 0 -5 -10 -15 -20 -6 0 5 10 15 20 25 30 35 0 40 5 10 15 20 25 FREQUENCY (GHz) 30 35 40 FREQUENCY (GHz) +25 C +85 C Input Return Loss 15.5 dB (Only Major States are Shown) 0 -10 -10 RETURN LOSS (dB) 0 -20 -30 -20 -30 -40 -40 -50 -50 0 5 10 15 20 25 FREQUENCY (GHz) IL 0.5 dB 1 dB 30 2 dB 4 dB 8 dB 35 0 40 5 10 15 20 25 30 FREQUENCY (GHz) IL 0.5 dB 1 dB 15.5 dB 2 dB 4 dB 8 dB 35 40 15.5 dB Bit Error vs. Frequency Bit Error vs. Attenuation State (Only Major States are Shown) 1.5 1 0.8 1 BIT ERROR (dB) 0.6 BIT ERROR (dB) 2 dB 4 dB 8dB Output Return Loss (Only Major States are Shown) RETURN LOSS (dB) I.L 0.5 dB 1 dB -55 C ATTENUATORS - CHIP Insertion Loss vs. Temperature 0.4 0.2 0 -0.2 -0.4 -0.6 0.5 0 -0.5 -1 -0.8 -1.5 -1 0 4 8 12 ATTENUATION STATE (dB) 10.0 GHz 20 GHz 16 30 GHz 0 5 10 I.L 0.5 dB 1 dB 15 20 25 FREQUENCY (GHz) 2 dB 4 dB 8 dB 30 35 40 15.5 dB For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 1-2 HMC941A v04.0818 1 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz Relative Phase vs. Frequency Step Attenuation vs. Attenuation State (Only Major States are Shown) STEP ATTENUATION (dB) RELATIVE PHASE (deg) 1 50 40 30 20 10 0 -10 0 5 10 15 20 25 FREQUENCY (GHz) I.L 0.5 dB 1 dB 30 35 2 dB 4 dB 8 dB 0.8 0.6 0.4 0.2 0 -0.2 -0.4 40 0 16 30 GHz (Minimum Attenuation State) 50 50 IP3 (dBm) 60 40 20 GHz Input IP3 vs. Temperature 60 40 30 20 0 5 10 15 20 25 FREQUENCY (GHz) IL 0.5 dB 1dB 30 2 dB 4 dB 8 dB 35 40 20 0.1 1 10 FREQUENCY (GHz) 15.5 dB +25C +85C 100 -55C Truth Table Input Power for 0.1 dB Compression 34 Control Voltage Input P4 8 dB P3 4 dB P2 2 dB P1 1 dB P0 0.5 dB Attenuation State RF1 - RF2 26 High High High High High Reference I.L. 22 High High High High Low 0.5 dB High High High Low High 1 dB High High Low High High 2 dB 30 P0.1dB (dBm) 8 12 ATTENUATION STATE (dB) 10 GHz 30 18 14 High Low High High High 4 dB 10 Low High High High High 8 dB Low Low Low Low Low 15.5 dB 6 0.01 0.1 1 FREQUENCY (GHz) 1-3 4 15.5 dB Input IP3 Over Major Attenuation States IP3 (dBm) ATTENUATORS - CHIP 60 10 100 Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC941A Absolute Maximum Ratings 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Bias Voltages & Currents RF Input Power (0.5 to 30 GHz) +27 dBm Control Voltage (P0 to P4) Vdd + 0.5V Vdd +5V @ 5 mA (Typ) Vdd +7 Vdc Vss -5V @ 6 mA (Typ) Vss -7 Vdc Channel Temperature 150 C Continuous Pdiss (T=85C) (derate 6.97 mW/C above 85C) 0.453 W Thermal Resistance (channel to die bottom) 143.5 C/W Storage Temperature -65 to + 150 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class 1A Control Voltage State Bias Condition Low 0 to 0.8V @ 1 A (Typ) High 2 to 5V @ 1 A (Typ) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ATTENUATORS - CHIP v04.0818 Outline Drawing PAD DESCRIPTION 1 2 3,4,5,6,7 8 9 10 11 RF1 VSS PO,P1,P2,P3,P4 VDD RF2 GND GND PAD SIZE 0.0056''[0.14] 0.0025''[0.06] 0.0025''[0.06] 0.0025''[0.06] 0.0056''[0.14] 0.0046''[0.12] 0.0029''[0.07] X X X X X X X 0.0029''[0.07] 0.0025''[0.06] 0.0025''[0.06] 0.0025''[0.06] 0.0029''[0.07] 0.0029''[0.07] 0.0029''[0.07] 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] 2. TYPICAL BOND PAD SPACING IS 0.0118" CENTER TO CENTER EXCEPT AS NOTED. 3. BACKSIDE METALIZATION: GOLD 4. BACKSIDE METAL IS GROUND 5. BOND PAD METALIZATION: GOLD Die Packaging Information [1] Standard Alternate WP-9 (Waffle Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Analog Devices Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 1-4 HMC941A v04.0818 ATTENUATORS - CHIP 1 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz Pad Descriptions Pad Number Function Description 10,11 GND Die bottom must be connected to RF ground. 1, 9 RF1, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2 Vss Negative Bias -5V 3-7 P0 - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Interface Schematic Assembly Diagram 1-5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC941A 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") ATTENUATORS - CHIP v04.0818 Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 1-6