AOK40B60D1
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 600 - - V
T
J
=25°C - 1.85 2.4
T
J
=125°C - 2.2 -
T
J
=150°C - 2.3 -
T
J
=25°C - 1.42 1.95
T
J
=125°C - 1.4 -
T
J
=150°C - 1.36 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.5 - V
T
J
=25°C - - 10
T
J
=125°C - - 600
T
J
=150°C - - 3000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 16 - S
C
ies
- 1950 - pF
C
oes
- 250 - pF
C
res
- 9 - pF
Q
g
- 45 - nC
Q
ge
- 17 - nC
Q
gc
- 15.6 - nC
I
C(SC)
- 140 - A
R
g
- 1.45 - Ω
t
D(on)
- 29 - ns
Turn-On DelayTime
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CE
=480V, I
C
=40A
SWITCHING PARAMETERS, (Load Iductive, T
J
=25°C)
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
V
GE
=15V, V
CE
=400V, R
G
=25Ω
Total Gate Charge
Gate resistance f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CE
=25V, f=1MHz
V
CE
=20V, I
C
=40A
V
CE
=0V, V
GE
=±20V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=40A V
V
CE
=600V, V
GE
=0V
V
GE
=0V, I
C
=20A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
t
D(off)
- 74 - ns
t
f
- 15 - ns
E
on
- 1.55 - mJ
E
off
- 0.3 - mJ
E
total
- 1.85 - mJ
t
rr
- 127 - ns
Q
rr
- 0.63 - µC
I
rm
- 8 - A
t
D(on)
- 29 - ns
t
r
- 24 - ns
t
D(off)
- 85 - ns
t
f
- 17 - ns
E
on
- 1.7 - mJ
E
off
- 0.49 - mJ
E
total
- 2.19 - mJ
t
rr
- 204 - ns
Q
rr
- 1.2 - µC
I
rm
- 11 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=150°C
I
F
=20A,dI/dt=200A/µs,V
CE
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=150°C
V
GE
=15V, V
CE
=400V, I
C
=40A,
R
G
=7.5Ω,
Parasitic Inductance=150nH
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
SWITCHING PARAMETERS, (Load Iductive, T
J
=150°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=20A,dI/dt=200A/µs,V
CE
=400V
Turn-Off Delay Time
V
GE
=15V, V
CE
=400V, I
C
=40A,
R
G
=7.5Ω,
Parasitic Ιnductance=150nH
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
Rev.3.0: Nov 2013 www.aosmd.com Page 2 of 9