EC4407KF
No.8397-1/4
Features
•Low ON-resistance.
•1.8V drive.
•mounting height : 0.4mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID1.3 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4.8 A
Allowable Power Dissipation PDMounted on a glass epoxy board 0.4 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=0.6A 0.96 1.6 S
RDS(on)1 ID=0.6A, VGS=4V 170 224 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.3A, VGS=2.5V 240 333 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 335 475 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 100 pF
Output Capacitance Coss VDS=10V, f=1MHz 22 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns
Rise Time trSee specified Test Circuit. 9 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall T ime tfSee specified Test Circuit. 7.5 ns
Continued on next page.
71505PE MS IM TB-00001523
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
EC4407KF
Ordering number : ENN8397
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
EC4407KF
No.8397-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.3A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.3A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.3A 0.4 nC
Diode Forward Voltage VSD IS=1.3A, VGS=0V 0.89 1.2 V
Package Dimensions
unit : mm
7043-001
Type No. Indication(Top view) Electrical Connection(Top view)
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1208-4-F
Top View
12
43
43
12
Polarity Discriminating Mark
0.8
0.5
0.3
0.2
Bottom View
1.2
0.4
0.75
KA
PW=10µs
D.C.≤1%
4V
0V
VIN
P.G 50Ω
G
S
ID=0.6A
RL=16.7Ω
VDD=10V
VOUT
VIN
D
EC4407KF
Gate
Source
Drain
Polarity mark (Top)
*Electrodes : on the bottom
EC4407KF
No.8397-3/4
ID -- VGS
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
ID -- VDS
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0
0
0.3
0.5
1.0
1.3
1.2
1.1
0.9
0.7
0.6
0.4
0.2
0.1
0.2
0.8
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
VGS=1.5V
1.8V
2.5V
IT09818
3.0V
4.0V
8.0V
6.0V5.0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS=10V
25°C
--25°C
75°C
Ta=75°C
Ta= --25°C
IT02984
25°C
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT09820
100
200
300
400
500
600
700
0
ID=100mA, VGS=1.8V
ID=300mA, VGS=2.5V
ID=600mA, VGS=4.0V
023146578
IT09819
100
200
300
400
500
600
700
0
Ta=25°C
ID=100mA
600mA
300mA
IS -- VSD
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
yfs -- ID
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
1.0
7
5
3
2
10
7
5
3
2
100
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
IT02989
IT02987
0.01 0.1
23 57
0.001 23 57 1.0
23 57 10
23 57
0.1 1.0
23 57 23 5
0.01
0.1
1.0
7
5
3
2
7
5
3
2
10
7
5
3
2
VDS=10V
75°C
Ta= --25°C
02468101214161820
10
100
1000
7
5
3
2
7
5
3
2
f=1MHz
Ciss
Coss
Crss
IT02990
IT02988
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
--25
°
C
25°C
Ta=75°C
25
°
C
EC4407KF
No.8397-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the EC4407KF is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
PD -- Ta
012345
0
1
2
3
4
5
6
7
8
9
10
VDS=10V
ID=1.3A
IT09221 IT09222
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01 0.1 23 57
1.00.01 2 3 57 2 3 57
10 23
I
DP=4.8A
ID=1.3A
Operation in this
area is limited by RDS(on).
100ms
DC operation
1ms
10ms
≤10µs
Ta=25°C
Single pulse
Mounted on a glass epoxy board
IT09223
0
020 40
0.05
0.10
0.20
0.30
0.40
0.15
0.25
0.35
0.45
60 80 100 120 140 160
Mounted on a glass epoxy board
