MBRD320, MBRD330, MBRD340
Bulletin PD-20756 rev. F 05/06
Part number MBRD320 MBRD330 MBRD340
VRMax. DC Reverse Voltage (V) 20 30 40
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
TJMax. Junction Temperature Range (*) - 40 to 150 °C
Tstg Max. Storage Temperature Range - 40 to 175 °C
RthJC Max. Thermal Resistance Junction 6.0 °C/W DC operation * See Fig. 4
to Case
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similar to TO-252AA
Device Marking MBRD340
Thermal-Mechanical Specifications
Parameters Value Units Conditions
VFM Max. Forward Voltage Drop (1) 0.48 0.6 V @ 3A
See Fig. 1 0.58 0.7 V @ 6A
0.41 0.49 V @ 3A
0.55 0.625 V @ 6A
IRM Max. Reverse Leakage Current (1) 0.02 0.2 mA TJ = 25 °C
See Fig. 2 10.7 20 mA TJ = 125 °C
CTTypical Junction Capacitance 189 - pF VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
LSTypical Series Inductance 5.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
TJ = 25 °C
Electrical Specifications
Parameters Typ. Max. Units Conditions
VR = rated VR
TJ = 125 °C
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
IF(AV) Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 133°C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive 490 5μs Sine or 3μs Rect. pulse
Surge Current 75 10ms Sine or 6ms Rect. pulse
EAS Non Repetitive Avalanche Energy 8.0 mJ TJ = 25 °C, IAS = 1Amp, L = 16mH
IAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Parameters Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied