TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
TAOS099 − JULY 2009
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Copyright E 2009, TAOS Inc.
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DHigh-Resolution Conversion of Light
Intensity to Frequency
DProgrammable Color and Full-Scale Output
Frequency
DCommunicates Directly With a Microcontroller
DSingle-Supply Operation (2.7 V to 5.5 V)
DPower Down Feature
DNonlinearity Error Typically 0.2% at 50 kHz
DStable 200 ppm/°C Temperature Coefficient
DLow-Profile Lead (Pb) Free and RoHS
Compliant Surface-Mount Package
Description
The TCS3200 and TCS3210 programmable color
light-to-frequency converters that combine confi-
gurable silicon photodiodes and a current-to-fre-
quency converter on a single monolithic CMOS
integrated circuit. The output is a square wave
(50% duty cycle) with frequency directly propor-
tional to light intensity (irradiance).
The full-scale output frequency can be scaled by one of three preset values via two control input pins. Digital
inputs and digital output allow direct interface to a microcontroller or other logic circuitry. Output enable (OE)
places the output in the high-impedance state for multiple-unit sharing of a microcontroller input line.
In the TCS3200, the light-to-frequency converter reads an 8 x 8 array of photodiodes. Sixteen photodiodes have
blue filters, 16 photodiodes have green filters, 16 photodiodes have red filters, and 16 photodiodes are clear
with no filters.
In the TCS3210, the light-to-frequency converter reads a 4 x 6 array of photodiodes. Six photodiodes have blue
filters, 6 photodiodes have green filters, 6 photodiodes have red filters, and 6 photodiodes are clear with no
filters.
The four types (colors) of photodiodes are interdigitated to minimize the effect of non-uniformity of incident
irradiance. All photodiodes of the same color are connected in parallel. Pins S2 and S3 are used to select which
group of photodiodes (red, green, blue, clear) are active. Photodiodes are 110 μm x 110 μm in size and are on
134-μm centers.
Functional Block Diagram
Light Current-to-Frequency
Converter
Photodiode
Array
S2 S3 S0 S1 OE
Output
r
r
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road S Suite 300 S Plano, TX 75074 S (972) 673-0759
8 S3
7 S2
6 OUT
5 VDD
PACKAGE D
8-LEAD SOIC
(TOP VIEW)
S0 1
S1 2
OE 3
GND 4
8 S3
7 S2
6 OUT
5 VDD
TCS3200
S0 1
S1 2
OE 3
GND 4
TCS3210
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME NO. I/O DESCRIPTION
GND 4 Power supply ground. All voltages are referenced to GND.
OE 3 I Enable for fo (active low).
OUT 6 O Output frequency (fo).
S0, S1 1, 2 IOutput frequency scaling selection inputs.
S2, S3 7, 8 IPhotodiode type selection inputs.
VDD 5Supply voltage
Table 1. Selectable Options
S0 S1 OUTPUT FREQUENCY SCALING (fo) S2 S3 PHOTODIODE TYPE
L L Power down L L Red
L H 2% L H Blue
H L 20% H L Clear (no filter)
H H 100% H H Green
Available Options
DEVICE TAPACKAGE − LEADS PACKAGE DESIGNATOR ORDERING NUMBER
TCS3200 −40°C to 85°C SOIC−8 D TCS3200D
TCS3210 −40°C to 85°C SOIC−8 D TCS3210D
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, all inputs, VI 0.3 V to VDD + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA (see Note 2) 40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range (see Note 2) 40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature (see Note 3) 260°C. . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to GND.
2. Long-term storage or operation above 70°C could cause package yellowing that will lower the sensitivity to wavelengths < 500nm.
3. The device may be hand soldered provided that heat is applied only to the solder pad and no contact is made between the tip of
the solder iron and the device lead. The maximum time heat should be applied to the device is 5 seconds.
Recommended Operating Conditions
MIN NOM MAX UNIT
Supply voltage, VDD 2.7 5 5.5 V
High-level input voltage, VIH VDD = 2.7 V to 5.5 V 2 VDD V
Low-level input voltage, VIL VDD = 2.7 V to 5.5 V 0 0.8 V
Operating free-air temperature range, TA−40 70 °C
Electrical Characteristics at TA = 25°C, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = −2 mA 4 4.5 V
VOL Low-level output voltage IOL = 2 mA 0.25 0.40 V
IIH High-level input current 5μA
IIL Low-level input current 5μA
I
Supply current
Power-on mode 1.4 2 mA
IDD Supply current Power-down mode 0.1 μA
S0 = H, S1 = H 500 600 kHz
Full-scale frequency (See Note 4) S0 = H, S1 = L 100 120 kHz
Full scale
frequency
(See
Note
4)
S0 = L, S1 = H 10 12 kHz
Temperature coefficient of responsivity λ 700 nm, −25°C TA 70°C±200 ppm/°C
kSVS Supply voltage sensitivity VDD = 5 V ±10% ±0.5 %/ V
NOTE 4: Full-scale frequency is the maximum operating frequency of the device without saturation.
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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Operating Characteristics at VDD = 5 V, TA = 25°C, S0 = H, S1 = H (unless otherwise noted)
(See Notes 5, 6, 7, and 8). Values for TCS3200 (TCS3210) are below.
PARAMETER TEST
CONDITIONS
CLEAR
PHOTODIODE
S2 = H, S3 = L
BLUE
PHOTODIODE
S2 = L, S3 = H
GREEN
PHOTODIODE
S2 = H, S3 = H
RED
PHOTODIODE
S2 = L, S3 = L UNIT
CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
E
e
= 47.2
μ
W/cm2
,
12.5 15.6 18.7
61%
84%
22%
43%
0%
6%
E
e
=
47
.
2
μW/cm2
,
λp = 470 nm (4.7) (5.85) (7) 61% 84% 22% 43% 0% 6%
f
Output
E
e
= 40.4
μ
W/cm2
,
12.5 15.6 18.7
8%
28%
57%
80%
9%
27%
kHz
fOfrequency
E
e
=
40
.
4
μW/cm2
,
λp = 524 nm (4.7) (5.85) (7) 8% 28% 57% 80% 9% 27% kHz
E
e
= 34.6
μ
W/cm2
,
13.1 16.4 19.7
5%
21%
0%
12%
84%
105%
E
e
=
34
.
6
μW/cm2
,
λp = 640 nm (4.9) (6.15) (7.4) 5% 21% 0% 12% 84% 105%
λ470 nm
331
61%
84%
22%
43%
0%
6%
λp = 470 nm (124) 61% 84% 22% 43% 0% 6%
R
Irradiance
λ524 nm
386
8%
28%
57%
80%
9%
27%
Hz/
( W/
Reresponsivity
λp = 524 nm (145) 8% 28% 57% 80% 9% 27% (μW/
cm
2
)
λ640 nm
474
5%
21%
0%
12%
84%
105%
cm2)
λp = 640 nm (178) 5% 21% 0% 12% 84% 105%
λ470 nm
1813
λp = 470 nm (4839) −− −− −−
Saturation
λ524 nm
1554
μ
W/
irradiance
λp = 524 nm (4138) −− −− −−
μW/
cm2
λ640 nm
1266
λp = 640 nm (3371) −− −− −−
fDDark
frequency Ee = 0 2 10 2 10 2 10 2 10 Hz
fO = 0 to 5 kHz ±0.1 ±0.1 ±0.1 ±0.1
Nonlinearity
fO = 0 to 50 kHz ±0.2 ±0.2 ±0.2 ±0.2 % F.S.
ote
fO = 0 to 500 kHz ±0.5 ±0.5 ±0.5 ±0.5
%
F.S.
Recovery
from power
down
100 100 100 100 μs
Response
time to out-
put enable
(OE)
100 100 100 100 ns
NOTES: 5. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
6. The 470 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:
peak wavelength λp = 470 nm, spectral halfwidth Δλ½ = 35 nm, and luminous efficacy = 75 lm/W.
7. The 524 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:
peak wavelength λp = 524 nm, spectral halfwidth Δλ½ = 47 nm, and luminous efficacy = 520 lm/W.
8. The 640 nm input irradiance is supplied by a AlInGaP light-emitting diode with the following characteristics:
peak wavelength λp = 640 nm, spectral halfwidth Δλ½ = 17 nm, and luminous efficacy = 155 lm/W.
9. Output frequency Blue, Green, Red percentage represents the ratio of the respective color to the Clear channel absolute value.
10. Irradiance responsivity Re is characterized over the range from zero to 5 kHz.
11. Saturation irradiance = (full-scale frequency)/(irradiance responsivity) for the Clear reference channel.
12. Nonlinearity is defined as the deviation of fO from a straight line between zero and full scale, expressed as a percent of full scale.
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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TYPICAL CHARACTERISTICS
Figure 1
300 500 700 900
Relative Responsivity
1100
λ − Wavelength − nm
PHOTODIODE SPECTRAL RESPONSIVITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
Blue
TA = 25°C
Green
Normalized to
Clear
@ 715 nm
Red
Blue
Green
Clear
Figure 2
NORMALIZED OUTPUT FREQUENCY
vs.
ANGULAR DISPLACEMENT
− Angular Displacement − °
fO — Output Frequency — Normalized
0
0.2
0.4
0.6
0.8
1
−90 −60 −30 0 30 60 90
Optical Axis
Angular Displacement is
Equal for Both Aspects
Figure 3
IDD vs.
VDD vs.
TEMPERATURE
1.05
1.1
1.15
1.2
1.25
1.3
1.35
1.4
1.45
1.5
1
1.55
0 25 50 75 100
TA − Free-Air Temperature − °C
IDD — mA
Saturated
VDD = 5 V
Saturated
VDD = 3 V
Dark
VDD = 3 V
Dark
VDD = 5 V
Figure 4
NORMALIZED OUTPUT
vs.
VDD
VDDV
Normalized Output — %
2.5 3 3.5 4 4.5 5
99.4
99.6
99.8
100
100.2
100.4
100.6
5.5
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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TYPICAL CHARACTERISTICS
Figure 5
λWavelength of Incident Light − nm
PHOTODIODE RESPONSIVITY TEMPERATURE COEFFICIENT
vs.
WAVELENGTH OF INCIDENT LIGHT
Temperature Coefficient — ppm/deg C
600 650 700 750 800 850 900 950 1000
1k
2k
3k
4k
5k
6k
7k
8k
9k
0
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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APPLICATION INFORMATION
Power supply considerations
Power-supply lines must be decoupled by a 0.01-μF to 0.1-μF capacitor with short leads mounted close to the
device package.
Input interface
A low-impedance electrical connection between the device OE pin and the device GND pin is required for
improved noise immunity. All input pins must be either driven by a logic signal or connected to VDD or GND —
they should not be left unconnected (floating).
Output interface
The output of the device is designed to drive a standard TTL or CMOS logic input over short distances. If lines
greater than 12 inches are used on the output, a buffer or line driver is recommended.
A high state on Output Enable (OE) places the output in a high-impedance state for multiple-unit sharing of a
microcontroller input line.
Power down
Powering down the sensor using S0/S1 (L/L) will cause the output to be held in a high-impedance state. This
is similar to the behavior of the output enable pin, however powering down the sensor saves significantly more
power than disabling the sensor with the output enable pin.
Photodiode type (color) selection
The type of photodiode (blue, green, red, or clear) used by the device is controlled by two logic inputs, S2 and
S3 (see Table 1).
Output frequency scaling
Output-frequency scaling is controlled by two logic inputs, S0 and S1. The internal light-to-frequency converter
generates a fixed-pulsewidth pulse train. Scaling is accomplished by internally connecting the pulse-train output
of the converter to a series of frequency dividers. Divided outputs are 50%-duty cycle square waves with relative
frequency values of 100%, 20%, and 2%. Because division of the output frequency is accomplished by counting
pulses of the principal internal frequency, the final-output period represents an average of the multiple periods
of the principle frequency.
The output-scaling counter registers are cleared upon the next pulse of the principal frequency after any
transition of the S0, S1, S2, S3, and OE lines. The output goes high upon the next subsequent pulse of the
principal frequency, beginning a new valid period. This minimizes the time delay between a change on the input
lines and the resulting new output period. The response time to an input programming change or to an irradiance
step change is one period of new frequency plus 1 μs. The scaled output changes both the full-scale frequency
and the dark frequency by the selected scale factor.
The frequency-scaling function allows the output range to be optimized for a variety of measurement
techniques. The scaled-down outputs may be used where only a slower frequency counter is available, such
as low-cost microcontroller, or where period measurement techniques are used.
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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APPLICATION INFORMATION
Measuring the frequency
The choice of interface and measurement technique depends on the desired resolution and data acquisition
rate. For maximum data-acquisition rate, period-measurement techniques are used.
Output data can be collected at a rate of twice the output frequency or one data point every microsecond for
full-scale output. Period measurement requires the use of a fast reference clock with available resolution directly
related to reference clock rate. Output scaling can be used to increase the resolution for a given clock rate or
to maximize resolution as the light input changes. Period measurement is used to measure rapidly varying light
levels or to make a very fast measurement of a constant light source.
Maximum resolution and accuracy may be obtained using frequency-measurement, pulse-accumulation, or
integration techniques. Frequency measurements provide the added benefit of averaging out random- or
high-frequency variations (jitter) resulting from noise in the light signal. Resolution is limited mainly by available
counter registers and allowable measurement time. Frequency measurement is well suited for slowly varying
or constant light levels and for reading average light levels over short periods of time. Integration (the
accumulation of pulses over a very long period of time) can be used to measure exposure, the amount of light
present in an area over a given time period.
PCB Pad Layout
Suggested PCB pad layout guidelines for the D package are shown in Figure 6.
2.25
6.90
4.65
1.27
0.50
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
Figure 6. Suggested D Package PCB Layout
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
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MECHANICAL INFORMATION
This SOIC package consists of an integrated circuit mounted on a lead frame and encapsulated with an electrically
nonconductive clear plastic compound. The TCS3200 has an 8 × 8 array of photodiodes with a total size of 1 mm
by 1 mm. The photodiodes are 110 μm × 110 μm in size and are positioned on 134 μm centers.
PACKAGE D PLASTIC SMALL-OUTLINE
A
1.75
1.35
0.50
0.25
4.00
3.80
6.20
5.80
450.88 TYP TOP OF
SENSOR DIE
5.00
4.80
5.3
MAX
1.27
0.41 0.25
0.10
0.25
0.19
DETAIL A
PIN 1
6 1.27 0.510
0.330
8
2.8 TYP
CLEAR WINDOW
2.12
0.250 3.00 0.250
NOTE B
Pb
PIN 1
TOP VIEW BOTTOM VIEW
SIDE VIEW
END VIEW
NOTES: A. All linear dimensions are in millimeters.
B. The center of the 1-mm by 1-mm photo-active area is referenced to the upper left corner tip of the lead frame (Pin 1).
C. Package is molded with an electrically nonconductive clear plastic compound having an index of refraction of 1.55.
D. This drawing is subject to change without notice.
Figure 7. Package D — TCS3200 Plastic Small Outline IC Packaging Configuration
TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
TAOS099 − JULY 2009
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MECHANICAL INFORMATION
This SOIC package consists of an integrated circuit mounted on a lead frame and encapsulated with an electrically
nonconductive clear plastic compound. The TCS3210 has a 4 × 6 array of photodiodes with a total size of 0.54 mm
by 0.8 mm. The photodiodes are 110 μm × 110 μm in size and are positioned on 134 μm centers.
PACKAGE D PLASTIC SMALL-OUTLINE
A
1.75
1.35
0.50
0.25
4.00
3.80
6.20
5.80
450.88 TYP TOP OF
SENSOR DIE
5.00
4.80
5.3
MAX
1.27
0.41 0.25
0.10
0.25
0.19
DETAIL A
PIN 1
6 1.27 0.510
0.330
8
2.8 TYP
CLEAR WINDOW
2.12
0.250 3.00 0.250
NOTE B
Pb
PIN 1
TOP VIEW BOTTOM VIEW
SIDE VIEW
END VIEW
NOTES: A. All linear dimensions are in millimeters.
B. The center of the 0.54-mm by 0.8-mm photo-active area is referenced to the upper left corner tip of the lead frame (Pin 1).
C. Package is molded with an electrically nonconductive clear plastic compound having an index of refraction of 1.55.
D. This drawing is subject to change without notice.
Figure 8. Package D — TCS3210 Plastic Small Outline IC Packaging Configuration
TCS3200, TCS3210
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MECHANICAL INFORMATION
0.292 0.013
[0.0115 0.0005]
2.11 0.10 [0.083 0.004]
2 0.05
[0.079
0.002]
4 0.1
[0.157
0.004]
1.75 0.10
[0.069 0.004]
12 + 0.3 − 0.1
[0.472 + 0.12 − 0.004]
SIDE VIEW
TOP VIEW END VIEW
DETAIL B
5.50 0.05
[0.217 0.002]
8 0.1
[0.315
0.004]
1.50
B
B
AA
6.45 0.10
[0.254 0.004]
5.13 0.10
[0.202 0.004]
DETAIL A
AoBo
Ko
NOTES: A. All linear dimensions are in millimeters [inches].
B. The dimensions on this drawing are for illustrative purposes only. Dimensions of an actual carrier may vary slightly.
C. Symbols on drawing Ao, Bo, and Ko are defined in ANSI EIA Standard 481−B 2001.
D. Each reel is 178 millimeters in diameter and contains 1000 parts.
E. TAOS packaging tape and reel conform to the requirements of EIA Standard 481−B.
F. This drawing is subject to change without notice.
Figure 9. Package D Carrier Tape
TCS3200, TCS3210
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MANUFACTURING INFORMATION
The Plastic Small Outline IC package (D) has been tested and has demonstrated an ability to be reflow soldered
to a PCB substrate.
The solder reflow profile describes the expected maximum heat exposure of components during the solder
reflow process of product on a PCB. Temperature is measured on top of component. The component should
be limited to a maximum of three passes through this solder reflow profile.
Table 2. TCS3200, TCS3210 Solder Reflow Profile
PARAMETER REFERENCE TCS32x0
Average temperature gradient in preheating 2.5°C/sec
Soak time tsoak 2 to 3 minutes
Time above 217°C t1Max 60 sec
Time above 230°C t2Max 50 sec
Time above Tpeak −10°C t3Max 10 sec
Peak temperature in reflow Tpeak 260° C (−0°C/+5°C)
Temperature gradient in cooling Max −5°C/sec
t3
t2
t1
tsoak
T3
T2
T1
Tpeak
Not to scale — for reference only
Time (sec)
Temperature (C)
Figure 10. TCS3200, TCS3210 Solder Reflow Profile Graph
TCS3200, TCS3210
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Moisture Sensitivity
Optical characteristics of the device can be adversely affected during the soldering process by the release and
vaporization of moisture that has been previously absorbed into the package molding compound. To prevent
these adverse conditions, all devices shipped in carrier tape have been pre-baked and shipped in a sealed
moisture-barrier bag. No further action is necessary if these devices are processed through solder reflow within
24 hours of the seal being broken on the moisture-barrier bag.
However, for all devices shipped in tubes or if the seal on the moisture barrier bag has been broken for 24 hours
or longer, it is recommended that the following procedures be used to ensure the package molding compound
contains the smallest amount of absorbed moisture possible.
For devices shipped in tubes:
1. Remove devices from tubes
2. Bake devices for 4 hours, at 90°C
3. After cooling, load devices back into tubes
4. Perform solder reflow within 24 hours after bake
Bake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be
re-baked for 4 hours, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C).
For devices shipped in carrier tape:
1. Bake devices for 4 hours, at 90°C in the tape
2. Perform solder reflow within 24 hours after bake
Bake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be
re−baked for 4 hours in tape, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C).
TCS3200, TCS3210
PROGRAMMABLE
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PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
LEAD-FREE (Pb-FREE) and GREEN STATEMENT
Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current
RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous
materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified
lead-free processes.
Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and
Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).
Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and
belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,
and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate
information from third parties. TAOS has taken and continues to take reasonable steps to provide representative
and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and
chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other
limited information may not be available for release.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced
Optoelectronic Solutions Incorporated.