TSOP4138ST1F - Vishay Presicion Group

TSOP41..ST1F

Document Number 81298

Rev. 1.0, 06-Mar-06

Vishay Semiconductors

www.vishay.com

2318296

IR Receiver Modules for Remote Control Systems

Description

The TSOP41..ST1F - series are miniaturized receiv-

ers for infrared remote control systems. PIN diode

and preamplifier are assembled on lead frame, the

epoxy package is designed as IR filter.

The demodulated output signal can directly be

decoded by a microprocessor. The main benefit is the

reliable function even in disturbed ambient and the

protection against uncontrolled output pulses.

Features

• Photo detector and preamplifier in one

package

• Internal filter for PCM frequency

• Improved shielding against electrical

field disturbance

• TTL and CMOS compatibility

• Output active low

• Low power consumption

• High immunity against ambient light

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Special Features

• Enhanced data rate of 4000 bit/s

• Suitable burst length ≥ 6 cycles/burst

• Enhanced suppression of disturbance signals by

special filtering

Parts Table

Block Diagram Application Circuit

Part Carrier Frequency

TSOP4130ST1F 30 kHz

TSOP4133ST1F 33 kHz

TSOP4136ST1F 36 kHz

TSOP4137ST1F 36.7 kHz

TSOP4138ST1F 38 kHz

TSOP4140ST1F 40 kHz

TSOP4156ST1F 56 kHz

25 kΩ

OUT

Demo-

GND

Pass

AGCInput

Band dulator

Control Circuit

16834_1

4.7 µF

TSOPxxx x

OUT

GND

Circuit

µC

= 100 Ω

+ VS

GND

Transmitte r

with

TSALxxxx V

and C

recommended to suppress power supply

disturbances.

16842

The output voltage should not be hold continuousl ya

a voltage below V

O =

3. 3Vb y the external circuit .

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Document Number 81298

Rev. 1.0, 06-Mar-06

TSOP41..ST1F

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Electrical and Optical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Supply Voltage (Pin 3) VS- 0.3 to + 6.0 V

Supply Current (Pin 3) IS5mA

Output Voltage (Pin 1) VO- 0.3 to + 6.0 V

Output Current (Pin 1) IO5mA

Junction Temperature Tj100 °C

Storage Temperature Range Tstg - 25 to + 85 °C

Operating Temperature Range Tamb - 25 to + 85 °C

Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW

Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C

Parameter Test condition Symbol Min Typ. Max Unit

Supply Current (Pin 3) VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA

VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA

Supply Voltage (Pin 3) VS4.5 5.5 V

Transmission Distance Ev = 0, test signal see fig.3,

IR diode TSAL6200,

IF = 250 mA

d35m

Output Voltage Low (Pin 1) IOL = 0.5 mA,Ee = 0.7 mW/m2,

f = fo, test signal see fig. 1

VOL 250 mV

Minimum Irradiance

(30 - 40 kHz)

Pulse width tolerance:

tpi - 5/fo < tpo < tpi + 6/fo,

test signal see fig.3

Ee min 0.2 0.4 mW/m2

Minimum Irradiance (56 kHz) Pulse width tolerance:

tpi - 5/fo < tpo < tpi + 6/fo,

test signal see fig.3

Ee min 0.3 0.5 mW/m2

Maximum Irradiance Test signal see fig. 1 Ee max 30 W/m2

Directivity Angle of half transmission

distance

ϕ1/2 ± 45 deg

TSOP41..ST1F

Document Number 81298

Rev. 1.0, 06-Mar-06

Vishay Semiconductors

www.vishay.com

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Figure 1. Output Function

Figure 2. Pulse Length and Sensitivity in Dark Ambient

Figure 3. Output Function

tpi *)

VOH

VOL tpo2) t

14337

Optical Test Signal

(IR diode TSAL6200, I

= 0.4 A, N = 6 pulses,

f = f

, T = 10 ms)

Output Signal

td1)

3/f0 < td < 9/f0

tpi - 4/f 0 < tpo < tpi + 6/f0

*) tpi 6/fo is recommended for optimal function

t – Output Pulse Width (ms)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee - Irradiance (mW/m²)

16907

Input Burst Duration

= 950 nm,

optical test signal, fig.1

Output Pulse

VOH

VOL t

600 µs 600 µs

T = 60 ms

Ton Toff

94 8134

Optical Test Signal

Output Signal, (see Fig. 4)

Figure 4. Output Pulse Diagram

Figure 5. Frequency Dependence of Responsivity

Figure 6. Sensitivity in Bright Ambient

T ,T – Output Pulse Width (ms)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.010000.0

Ee – Irradiance (mW/m2)

16910

To ff

= 950 nm,

optical test signal, fig. 3

To n

on off

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.7 0.9 1.1 1.3

f/f0 – Relative Frequency

16926

f (3 dB) = f0/7

E / E – Rel. Responsivity

e min e

f = f0 ± 5 %

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.01 0.10 1.00 10.00 100.00

E – Ambient DC Irradiance (W/m2)16911

Correlation with ambient light sources:

10 W/m21.4 klx (Std.illum.A, T= 2855 K)

10 W/m28.2 klx (Daylight, T = 5900 K)

Ambient, = 950 nm

E – Threshold Irradiance (mW/m )

e min

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Document Number 81298

Rev. 1.0, 06-Mar-06

TSOP41..ST1F

Vishay Semiconductors

Figure 7. Sensitivity vs. Supply Voltage Disturbances

Figure 8. Sensitivity vs. Electric Field Disturbances

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

0.0

0.5

1.0

1.5

2.0

0.1 1.0 10.0 100.0 1000.0

VsRMS - AC Voltage on DC Supply Voltage (mV)

16912

f = fo

f = 10 kHz

E – Threshold Irradiance (mW/m²)

e min

f = 1 kHz

f = 100 Hz

E – Threshold Irradiance (mW/m²)

0.0 0.4 0.81.2 1.6

0.0

0.4

0.8

1.2

2.0

E – Field Strength of Disturbance (kV/m)

2.0

94 8147

1.6

e min

f(E) = f0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

020406080 100 120

Burst Length (number of cycles/burst)

16914

f = 38 kHz, Ee = 2 mW/m2

Max. Envelope Duty Cycle

Figure 10. Sensitivity vs. Ambient Temperature

Figure 11. Relative Spectral Sensitivity vs. Wavelength

Figure 12. Directivity

0.0

0.1

0.2

0.3

0.4

0.5

0.6

- 30 - 15 0 15 30 45 60 75 90

Tamb – Ambient Temperature (°C)

16918

Sensitivity in dark ambient

E – Threshold Irradiance (mW/m²)

e min

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

750 850 950 1050 1150

18998λ– Wavelength (nm)

S( )–

Relative Spectral Sensitivityλrel

96 12223p2

0.4 0.2 0 0.2 0.4 0.6

0.6

0.9

0°

30°

10° 20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel – Relative Transmission Distance

TSOP41..ST1F

Document Number 81298

Rev. 1.0, 06-Mar-06

Vishay Semiconductors

www.vishay.com

Suitable Data Format

The circuit of the TSOP41..ST1F is designed in that

way that unexpected output pulses due to noise or

disturbance signals are avoided. A bandpass filter, an

integrator stage and an automatic gain control are

used to suppress such disturbances.

The distinguishing mark between data signal and dis-

turbance signal are carrier frequency, burst length

and duty cycle.

The data signal should fulfill the following conditions:

• Carrier frequency should be close to center fre-

quency of the bandpass (e.g. 38 kHz).

• Burst length should be 6 cycles/burst or longer.

• After each burst which is between 6 cycles and 70

cycles a gap time of at least 10 cycles is necessary.

• For each burst which is longer than 1.8 ms a corre-

sponding gap time is necessary at some time in the

data stream. This gap time should have at least same

length as the burst.

• Up to 2200 short bursts per second can be received

continuously.

Some examples for suitable data format are: NEC

Code, Toshiba Micom Format, Sharp Code, RC5

Code, RC6 Code, RCMM Code, R-2000 Code,

RECS-80 Code.

When a disturbance signal is applied to the

TSOP41..ST1F it can still receive the data signal.

However the sensitivity is reduced to that level that no

unexpected pulses will occur.

Some examples for such disturbance signals which

are suppressed by the TSOP41..ST1F are:

• DC light (e.g. from tungsten bulb or sunlight)

• Continuous signal at 38 kHz or at any other fre-

quency

• Signals from fluorescent lamps with electronic bal-

last (an example of the signal modulation is in the fig-

ure below).

Figure 13. IR Signal from Fluorescent Lamp with low Modulation

0 5 10 15 20

Time (ms)

16920

IR Signal

IR Signal from fluorescent

lamp with low modulation

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Document Number 81298

Rev. 1.0, 06-Mar-06

TSOP41..ST1F

Vishay Semiconductors

Package Dimensions in mm

16793

TSOP41..ST1F

Document Number 81298

Rev. 1.0, 06-Mar-06

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Legal Disclaimer Notice

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Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1

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