NOTICE OF REVISION (NOR)
T his revision described below h as been auth orized for the docu men t listed.
1. DA T E
(YYMMDD)
95-01-25
F orm Approved
OMB No. 0704-
0188
Publi c reporting burden for t hi s c ollect i on is estimat ed to average 2 hours per response, inc l udi ng the t i me for revi ewi ng i nst ructions,
searching existi ng data sources, gatheri ng and m aintaining t he dat a needed, and compl eting and reviewi ng the c ollecti on of
information. Send comments regarding this burden esti mate or any other aspec t of thi s c ollect i on of information, including
suggest i ons for reducing thi s burden, t o Department of Defense, Washi ngt i on Headquarters Services, Direct orat e for I nformati on
Operations and Reports, 1215 Jefferson Davis Highw ay, Sui te 1204, A rl i ngton, VA 22202-4302, and to the Offic e of Management and
Budget, Paperwork Reduction Proj ect (0704-0188), Washington, DC 20503. P LEASE DO NOT RETURN YOUR CO MPLETED
FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLE T ED FORM TO THE GOVE RNME NT ISSUING
CONTRA CTING OF F ICER FO R T HE CONTRA CT / PROCURING ACTIVI TY NUMBE R LISTED IN I T EM 2 OF THI S FORM.
2. PROCURING
ACTIVITY NO.
3. DODAAC
4. ORIGIN A T OR b. ADDRESS (Street, City, State, Zip Code)
Defens e Elec tronics Supply Center
1507 Wilmington Pike
Dayton, OH 45444-5270
5. CA G E CODE
67268 6. NOR NO .
5962-R060-95
a. TYPED NAME (First, Middle Initial,
Last)
7. CA G E CODE
67268 8. DOCUME NT NO.
5962-91690
Microcircuit, Linear, 12-Bit A/D Converter with
9. T ITLE OF DO CUMENT
Micr oprocessor In terface, M onolith ic Silicon. 10. REVISION LETTER
11. ECP NO.
N o registered u sers
a. CURRENT
C b. NE W
D
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
13. DESCRIPTION OF REVISION
Sheet 1: Revisions ltr column; add "D".
Revisions description column; add "Changes in accor dance with NOR 5962-R060-95".
Revisions date column; add "95-01-25".
Revision level block; add "D".
Rev status of sheets; For sheets 1 and 10, add "D".
Sheet 10: Figure 1, Terminal connec tions ; Terminal sym bol columns, Change column for device types "01 and 02" to device types "01, 02,
and 04". Change column for device types "03 and 04" to device type "03".
Revision level block; add "D".
14. THIS SECTION FOR GOVERNMENT USE ONLY
a. (X one) X (1) Existing doc um ent supplemented by the NOR may be used in manufactur e.
(2) Revis ed document mus t be received before manuf acturer may incorporate t his change.
(3) Custodian of master document shall m ake above r evision and furnish r evised doc um ent.
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT
DESC-ELDS c. TYPED NAME (First, Middle Initial, Last)
Michael A. Fry e
d. TITLE
C hief, Microelectronics B ranch e. SIGNATURE
Michael A. Fry e f. DATE SIGNED
(YYMMDD)
95-01-25
15a. ACTIVITY ACCOMPLISHING REVISION
DESC-ELDS b. REVISION COMPLET ED (Signature)
S and ra Roon ey c. DATE SIGNED
(YYMMDD)
95-01-25
DD Form 1695, APR 92 Previous editions are obsolete
NOTICE OF REVISION (NOR)
T his revision described below h as been auth orized for the docu men t listed.
1. DA T E
(YYMMDD)
95-01-17
F orm Approved
OMB No. 0704-
0188
Publi c reporting burden for t hi s c ollect i on is estimat ed to average 2 hours per response, inc l udi ng the t i me for revi ewi ng i nst ructions,
searching existi ng data sources, gatheri ng and m aintaining t he dat a needed, and compl eting and reviewi ng the c ollecti on of
information. Send comments regarding this burden esti mate or any other aspec t of thi s c ollect i on of information, including
suggest i ons for reducing thi s burden, t o Department of Defense, Washi ngt i on Headquarters Services, Direct orat e for I nformati on
Operations and Reports, 1215 Jefferson Davis Highw ay, Sui te 1204, A rl i ngton, VA 22202-4302, and to the Offic e of Management and
Budget, Paperwork Reduction Proj ect (0704-0188), Washington, DC 20503. P LEASE DO NOT RETURN YOUR CO MPLETED
FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLE T ED FORM TO THE GOVE RNME NT ISSUING
CONTRA CTING OF F ICER FO R T HE CONTRA CT / PROCURING ACTIVI TY NUMBE R LISTED IN I T EM 2 OF THI S FORM.
2. PROCURING
ACTIVITY NO.
3. DODAAC
4. ORIGIN A T OR b. ADDRESS (Street, City, State, Zip Code)
Defens e Elec tronics Supply Center
1507 Wilmington Pike
Dayton, OH 45444-5270
5. CA G E CODE
67268 6. NOR NO .
5962-R017-95
a. TYPED NAME (First, Middle Initial,
Last)
7. CA G E CODE
67268 8. DOCUME NT NO.
5962-91690
Microcircuit, Linear, 12-Bit A/D converter with
9. T ITLE OF DO CUMENT
micr oprocessor in terface, M onolith ic Silicon. 10. REVISION LETTER No
11. ECP NO.
registered users
a. CURRENT
B b. NE W
C
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
13. DESCRIPTION OF REVISION
Sheet 1: Revisions ltr column; add "C".
Revisions description column; add "Changes in accor dance with NOR 5962-R017-95".
Revisions date column; add "95-01-17".
Revision level block; add "C".
Rev status of sheets; For sheets 1 and 6, add "C".
Sheet 6: Table I, Internal reference voltage test, V ; For device type 04, change minimum limit from "9.97 V" to "9.9 V" and change
REF
maximum limit from "10.03 V" to "10.1 V".
Revision level block; add "C".
14. THIS SECTION FOR GOVERNMENT USE ONLY
a. (X one) X (1) Existing doc um ent supplemented by the NOR may be used in manufactur e.
(2) Revis ed document mus t be received before manuf acturer may incorporate t his change.
(3) Custodian of master document shall m ake above r evision and furnish r evised doc um ent.
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT
DESC-ELDS c. TYPED NAME (First, Middle Initial, Last)
Michael A. Fry e
d. TITLE
C hief, Microelectronics B ranch e. SIGNATURE
Michael A. Fry e f. DATE SIGNED
(YYMMDD)
95-01-17
15a. ACTIVITY ACCOMPLISHING REVISION
DESC-ELDS b. REVISION COMPLET ED (Signature)
S and ra Roon ey c. DATE SIGNED
(YYMMDD)
95-01-17
DD Form 1695, APR 92 Previous editions are obsolete
REVISIONS
LTR DESCRIPTION DATE (YR-MO-DA) APPROVED
B Redrawn w it h changes . A dd device type 04. A dd
vendor CAGE 33256 94-09-01 M .A. F rye
THE ORI GINAL FIRST PAGE OF THIS DRAWI NG HAS BEEN REPLACED.
REV
SHEET
REV BBBBB
SHEET 15 16 17 18 19
REV STATUS
OF SHEETS REV BBBBBBBBBBBBBB
SHEET 1234567891011121314
PMIC N/A PREPARED BY
Sandra Rooney DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY AL L
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHECKED BY
Charles E. Beso re
MI CRO CIRCUIT, LINEAR, 12-B IT A / D
CONVERTER WITH MICROPROCESSOR
INTERFACE, M ONOLITHIC SILI CON
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
92-05-14 SIZE
ACAGE CODE
67268 5962-91690
REVISION LEVEL
B SHEET 1 OF 19
DESC FORM 193
JUL 94 5962-E396-94
DISTRIBUTION STATEMENT A. Approved for public rele ase; distributio n is unlimited.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
2
DESC FORM 193A
JUL 94
1. SCOPE
1.1 Scope. This drawing for ms a part of a one part - part num ber documentati on system (see 6.6 herein). Two product
as s u ra nce cla s s es c o n s is tin g of military high reliability (device classes B, Q, and M) and space applicat i on ( device classes S and
V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identif ying Number (PIN). Device
class M microcircuits represent non-JAN class B microcircuit s in accordance wi t h 1. 2. 1 of MIL- STD-883, "Provisions for t he use
of MIL-STD-883 in conjunction with compliant non-JAN devices" . When available, a choice of radiation hardness assurance (RHA)
levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the fol l owi ng exampl e:
5962 - 91690 01 M X X
| | | | | |
| | | | | |
| |
| | |
Federal RHA Device Device Case Lead
stock cl ass designator t y pe class outl i ne finish
designator ( See 1.2. 1) ( See 1.2.2) designator ( See 1.2.4) (See 1.2. 5)
\ / (See 1.2.3)
\/
Drawing number
1.2.1 Radiati on har dness assurance (RHA) designator. Device cl asses M RHA m ar ked devices shall meet the MIL-I-38535
specified RHA levels and shall be m ar ked with t he appropri at e RHA designator. Device classes Q and V RHA marked devices
shall meet the MIL-I - 38535 specif i ed RHA levels and shal l be m ar k ed with t he appropri at e RHA designat or . A dash (-) indicates
a non-RHA device.
1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function
01 674ZA High performance, 12-bit A/ D converter
wi t h mi cr opr ocessor int erface and S/H
02 674ZB Medium performance, 12-bit A/D converter
with micr opr ocessor int erface and S/H
03 674BT 12-bit A/ D converter with micropr ocessor int erface
04 674AT 12-bit A/ D converter with micropr ocessor int erface
1 . 2 . 3 Device class designator. The devi ce class designator shall be a single letter ident i fying the product assur ance level as
follows:
Device class Device requirem ents documentation
M Vendor self- c erti f i cation to t he requirements for non- JAN class B
m i cr ocircuit s in accordance wi t h 1. 2. 1 of MIL- STD-883
Q or V Certificati on and qual ific at ion to MIL-I - 38535
1.2.4 Case outli ne(s). The case outline(s) shall be as desi gnat ed in MIL-STD-1835 and as follows:
Outline letter Descri pt ive designator Terminals Package style
X GDIP1-T28 or CDIP2-T28 28 dual-in- line
3 CQCC1-N28 28 square chi p car r ier package
1.2.5 Lead finish. The lead fi nish shal l be as speci fied in MIL-STD-883 (see 3. 1 herein) f or classes M or MIL-I-38535 f or
classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation i s for use in
specificat ions when lead finishes A, B, and C ar e considered acceptable and interchangeabl e without pr eference.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
3
DESC FORM 193A
JUL 94
1.3 Absolute maxim um r at i ngs . 1/
V to digital common - - - - - - - - - - - - - - - -------- 0 V dc to +16.5 V dc
CC
V to di gital common 2/ - - - - - - - - - - - - - - - - ----- 0 V dc to -16.5 V dc
EE
V to digital common - - - - - - - - - - - - - - - ----- 0 V dc to +7 V dc
LOGIC
Analog common to digital common:
Devi ce types 01 and 02 - - - - - - - - - - - - - - ------ -0.5 V dc to +1 V dc
Device type 03 - - - - - - - - - - - - - - - - - - - -------- ±1 V dc
Control inputs (CE, CS, Ao, 12/ 8, R/ C) t o
digital common - - - - - - - - - - - - - - - - - - - -------- -0.5 V dc to V + 0.5 V dc
LOGIC
Analog i nput s ( REF IN, BI P O FF, 10 V ) to
IN
analog common - - - - - - - - - - - - - - - - - - - ------- ±16.5 V dc
20 V analog input voltage to analog common - - - - - ±24 V dc
IN
V - - - - - - - - - - - - - - - - - - - - - - - -------- Indefinite short to common
REF OUT
m omentary short t o VCC
Power di ssi pation (P ):
D
Devi ce types 01 and 02 (T = +25
(
C) - - - - - - - - - - - 1000 m W
A
Device type 03 (T = +25
(
C) - - - - - - - - - - - - ----- 470 mW
A
Lead temper at ur e (sol dering, 10 seconds) - - - - - - - - - +300
(
C
Storage temperature - - - - - - - - - - - - - - - - - ------ -65
(
C to +150
(
C
Junction temperature (T) - - - - - - - - - - - - - - ------ +175
(
C
J
Ther mal r esistance, j unct i on- to-case (
) - - - - - - - - See MIL-STD-1835
JC
Ther mal r esistance, j unct i on- to-am bient (
):
JA
Devi ce types 01 and 02 case X - - - - - - - - - - - ---- 48
(
C/W
Device type 03 case X - - - - - - - - - - - - - - - ------ 60
(
C/W
Device type 04 case X ---------------------- 50
(
C/W
Case 3 - - - - - - - - - - - - - - - - - - - - - - - ---------- 48
(
C/W
1.4 Recommended operating condi tions.
Logic suppl y voltage (V - - - - - - - - - - - - ----- +4.5 V dc to +5.5 V dc
LOGIC)
Positive suppl y vol t age (V ) - - - - - - - - - - - - ----- +11.4 V dc to +16.5 V dc
CC
Negative suppl y vol tage (V ) 2/ - - - - - - - - - - - ---- -11.4 V dc to -16.5 V dc
EE
Am bient operating temperatur e range (T ) - - - - - - - - - -55
(
C to +125
(
C
A
2. APPL ICABLE DOCUMENTS
2.1 Governm ent speci ficat ions, standards, bulletin, and handbook. Unless otherwise specified, the following specifications,
standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and
Standards specif i ed in t he solic i tation, form a part of t his drawing t o the extent specifi ed herein.
SPECIFICATIONS
MIL ITARY
MIL-I- 38535 - Int egrated Circui t s, Manufacturi ng, General Specification for.
STANDARDS
MIL ITARY
MIL-STD-883 - Test Methods and Procedures for Micr oelectronics.
MIL-STD-973 - Configur ation Management.
MIL-STD-1835 - Mi cr ocircuit Case Outl i nes.
1/ Stresses above the absol ut e m aximum r at ing m ay cause permanent dam age to the devi ce. Ext ended
oper at i on at the maximum l evel s may degrade performance and affect reliability.
2/ V is not r equired for operation of devices 01 and 02, and 04.
EE
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
4
DESC FORM 193A
JUL 94
BULLETIN
MILITARY
MIL-BUL-103 - Li st of St andar dized Military Drawings (SMD's).
HANDBOOK
MIL ITARY
MIL-HDBK-780 - Standardi zed Military Drawings.
(Copies of the spe cifications, standards, bulletin, and handbook required by manufactur ers in connection wi t h specific acquisi t i on
functions should be obtained from the contracti ng act ivity or as di r ected by the contr act ing activity.)
2.2 Orde r of prece dence. I n t he event of a conf lict between the text of t hi s dr awi ng and t he references cited herein, t he text of
thi s dr awi ng shal l take precedence.
3. REQUIREMENTS
3.1 Ite m re quirements. The i ndividual it em requir ements for dev ice clas s M shall be in ac cordance with 1.2.1 of MIL-STD-883,
"Provisions for the use of MIL- STD-883 in conjunction wi t h compl i ant non- JAN devices" and as specifi ed herein. The individual
item requirements for device classes Q and V shall be in accordance with MIL-I-38535, the device manufacturer's Quality
Management ( Q M) plan, and as specifi ed her ein.
3.2 Desi gn, constructi on, and physical dimensions. The design, constructi on, and physical di mensions shall be as speci f i ed
in MIL-STD-883 (s ee 3.1 herein) for cl asses M and MIL- I-38535 for device classes Q and V and herein.
3.2.1 Case outli ne(s). The case outline(s) shall be in accordance with 1. 2. 2 herein.
3.2. 2 Terminal connections . The terminal connections shal l be as speci fied on figure 1.
3.2. 3 Tr ut h t able. The trut h t able shal l be as specified on fi gur e 2.
3.2.4 Bl ock or logic di agr am. The block or l ogi c diagram shall be as speci f i ed on fi gur e 3.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical
perf or mance characteristics and postir r adiation par ameter l im i t s ar e as speci fied in table I and shal l apply over t he full am bient
operating t em peratur e range.
3.4 El ectri c al t est requirem ents. The el ectrical t est requirem ents shal l be the subgroups speci fied in tabl e IIA. The el ectrical
tests for each subgroup are descri bed in table I.
3.5 Marking. The part shall be marked with the PIN listed i n 1. 2 herein. Marking f or device class M shall be in accordance with
MIL-STD-883 ( see 3. 1 herein). In addition, the m anuf act urer's PI N may also be m ar ked as li st ed in MIL- BUL-103. Marki ng for
devi ce classes Q and V shall be in accordance with MIL-I-38535.
3.5. 1 Certification/compli ance m ar k . The compli ance m ar k f or device class M shall be a "C" as required in
MIL-STD-883 (see 3.1 herein). The cert i f ication mark f or device classes Q and V shal l be a "QML" as r equired in MIL-I - 38535.
3.6 Certif icate of com pliance. For device class M, a certificate of com pl iance shal l be required from a m anuf act ur er in or der
to be listed as an approved source of supply i n MIL-BUL-103 (see 6.7. 2 her ei n). For device classes Q and V, a cert if icate of
compliance shal l be requir ed from a QML-38535 l isted manuf acturer in order to suppl y to the requi r em ents of t his drawing ( see
6. 7. 1 herein). The certificate of compliance submitted to DESC-ECS pri or to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, f or device class M the r equirem ents of MIL-STD-883 (s ee 3.1 herein),
or for device classes Q and V, the requir em ents of MIL- I - 38535 and t he requirements her ein.
3.7 Certifi cat e of confor mance. A certif i cate of conf or mance as requi r ed for device class M in MIL-STD-883 (see 3.1 herei n)
or for device classes Q and V in MIL-I- 38535 shal l be provided wit h each lot of mi cr oci r cuits delivered t o t hi s dr awi ng.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
5
DESC FORM 193A
JUL 94
TABLE I. El ectrical performance characteristics.
Test Symbol Co n d i tions 1/
-55°C
T
+125°C
A
V = +15 V, V = +5 V,
CC LOGIC
unless otherwise specified
Group A
subgroups Device
type Limits Unit
Min Max
Power supply curre nt
from V 2/
LOGIC ILOGIC Thr ee-state outputs 1, 2, 3 01,02
04 +1.0 mA
03 +7.0
Power supply curre nt
from V 2/
CC ICC 1, 2, 3 01,02
04 +9.0
03 +7.0
Power supply curre nt
from VEE IEE 1, 2, 3 03 -14
Resolution 1 All 12 Bits
Integral linearity
error ILE Unipolar 10 V span
Bipolar 20 V span 2, 3 All -0.5 +0.5 LSB
All -1.0 +1.0
Differential
linearity error
(minimum res ol ution
for which no missi ng
codes are
guaranteed)
DLE 1, 2, 3 All 12 Bits
Unipolar offset
voltage error VIO 10 V span 1 All -2.0 +2.0 LSB
Unipolar offset
v ol ta ge ddrift
w
VIO
-------
w
T
10 V span
Using internal reference 2, 3 All -1.0 +1.0
Bipolar zero offset
error BZ20 V span 1 01,02
04 -4.0 +4.0
03 -3.0 +3.0
Bipolar zero offset
drift
w
BZ
-------
w
T
20 V span
Using internal reference 2, 3 02,03
04 -2.0 +2.0
01 -1.0 +1.0
Gain error AEBipolar 20 V span
50
6
resistor from
REF OUT to REF IN
1 01,02
04 %FSR
03
See footnotes at end of t able.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
6
DESC FORM 193A
JUL 94
TABLE I. El ectrical performance characteristics - Continued.
Test Symbol Co n d i tions 1/
-55°C
T
+125°C
A
V = +15 V, V = +5 V,
CC LOGIC
unless otherwise specified
Group A
subgroups Device
type Limits Unit
Min Max
Gain error dri ft
w
AE
--------
w
T
Bipolar 20V span
Using internal reference 2, 3 01 12.5 ppm/°C
02,04 25.0
03 17.5
Power supply
sensitivity to
V 3/ 4/
CC
+PSS1 1, 2, 3 All -1.0 +1.0 LSB
Power supply
sensitivity to
V 3/ 5/
LOGIC
+PSS2 1, 2, 3 All -0.5 +0.5
Power supply
sensitivity to
V 3/ 6/
EE
-PSS3 1, 2, 3 03 -1.0 +1.0
Input impedence 2/Z
IN 10 V span 1, 2, 3 01,02
04 3.75 6.25 k
6
03 3.0 7.0
20 V span 1, 2, 3 01,02
04 15 25
03 6 14
Internal refe re nce
v ol ta ge 7 VREF I = 2 mA
REFOUT 1, 2, 3 01,02
04 9.97 10.03 V
03 9.9 10.1
Logic input high
v ol ta ge (CE, C
S
,
12/8, R/C
, A )
O
2/ 8/
VIH Logic "1" 1, 2, 3 All +2.0 +5. 5 V
Logic input low
v ol ta ge (CE, C
S
,
12/8, R/C
, A )
O
2/ 8/
VIL Logic "0" 1, 2, 3 All -0. 5 +0.8 V
See footnotes at end of t able.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
7
DESC FORM 193A
JUL 94
TABLE I. El ectrical performance characteristics - Continued.
Test Symbol Co n d i tions 1/
-55°C
T
+125°C
A
V = +15 V, V = +5 V,
CC LOGIC
unless otherwise specified
Group A
subgroups Device
type Limits Unit
Min Max
Logic input cur rent
2/IIN(LOG) 0 to +5. 5 V input 1, 2, 3 01,02 +1.0 µA
04 -20 +20
0 to + 5.0 V i nput 03 -10 +10
Logic low output
v ol ta ge 2/
(DB11-DB0)
VOL Logic "0"
I = 1.6 mA
sink 1, 2, 3 All +0. 4 V
Logic high output
v ol ta ge 2/
(DB11-DB0)
VOH Logic "1"
I = 500 µA
source 1, 2, 3 All +2.4 V
Three-state output
leakage current IZHigh- Z state
(DB11 - DB0 only)
V = 5.0 V
applied
1, 2, 3 01,02 -5.0 +5.0 µA
03 -10 +10
04 -20 +20
Functional te sts 2/ Se e section 4.4.1b 7, 8 All
Low R/C
pulse
width 9/tHRL See figur e 4 9, 10, 11 All 50 ns
STS delay fr om R/C
tDS 01,02
04 200
03 225
Data v a lid after
R/C
low 11/tHDR All 25
STS delay afte r
data va lid tHS 01,02
04 300 1000
03 30 600
High R/C
pulse
width 9/tHRH All 150
Data access time
12/tDDR 150
See footnotes at end of t able.
STANDARDIZED
MICRO CIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, O HIO 45444
SIZE
A 5962-91690
REVISION LEVEL
B
SHEET
8
DESC FORM 193A
JUL 94
TABLE I. El ectrical performance characteristics - Continued.
Test Symbol Co n d i tions 1/
-55°C
T
+125°C
A
V = +15 V, V = +5 V,
CC LOGIC
unless otherwise specified
Group A
subgroups Device
type Limits Unit
Min Max
STS delay fr om CE
10/tDSC Se e figure 5 1, 2, 3 01,02 200 ns
03 225
CE pulse width 9/t
HEC All 50
C
S
to CE setup tSSC 50
Conve rsion t ime
13/tC8- bit cycl e, se e figur e 5 9, 10, 11 All 6 10 µs
12-bit cycle, see figure 5 9 15
C
S
low during CE tHSC See f igure 5 9, 10, 11 All 50
R/C
to CE setup tSRC 50
R/C
low during CE
high tHRC 50
A to CE setup
0tSAC 0
A va lid dur ing CE
0
high tHAC 50
Access time (from CE)
12/tDD Se e figur e 6 9, 10, 11 All 150 ns
Data v a lid after CE
low 11/tHD 01,02
04 25
11 03 15
9, 10 25
Output float delay 11/t
HL 9, 10, 11 All 150
C
S
to CE setup tSSR All 50
R/C
to CE setup tSRR All 0
Sam ple and hold 14/
acquisition time tacq T = +25°C
A9 01,02
04 1.2 2.0 µs
A to CE setup
0tSAR See figur e 6 9, 10, 11 All 50 ns
See footnotes at end of t able.
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TABLE I. El ectrical performance characteristics - Continued.
Test Symbol Co n d i tions 1/
-55°C
T
+125°C
A
V = +15 V, V = +5 V,
CC LOGIC
unless otherwise specified
Group A
subgroups Device
type Limits Unit
Min Max
C
S
v a lid after CE
low tHSR See figure 6 9, 10, 11 All 0 ns
R/C
high afte r CE
low tHRR All 0
A valid after CE
0
low tHAR All 50
1/ 12/8
connect ed to V , Ao and C
S
at l ogic "0", CE at logic "1". 10 V unipol ar : 50
6
LOGIC
registor pi n 8 to pin 10, 50
6
resistor pi n 12 to ground. Anal og i nput connected to pi n 13.
20 V bipol ar : 50
6
resistor pi n 8 to pin 12, 50 r esist or pi n 8 to pin 10. Anal og input
connect ed to pin 14. Unl ess otherwise not ed, these conditions apply.
2/ Device types are test ed to the conditi ons st at ed in table I, but are guaranteed to the speci fied
li mi t s f or t he following variations in t he supply vol t age ranges. V = +5 V to +5%,
LOGIC
V = +12 V +5% and +15V to +10%, V = - 12 V +5% and - 15 V +10%. ( V not required for
CC EE EE
operation of devices 01, 02, and 04). For devi ce type 03, V = +5 V to ±10%.
LOGIC
3/ Maxim um change in ful l scale cal i br at ion due t o suppl y voltage shifts. Full scal e calibr at ion
to be measured at minimum and maximum vol tage settings for each individual supply.
4/ +13.5 V < V < +16.5 V, V = 5 V, V = - 15 V and +11. 4 V < V < +12.6 V,
CC LOGIC EE CC
V = 5 V, V = -12 V. ( V not requi r ed for operati on of devi ces 01, 02 and 04).
LOGIC EE EE
5/ 4. 5 V < V < 5.5 V, V = 15V, V = - 15V. ( V not r equir ed for operati on of devices 01, 02, and 04) .
LOGIC CC EE EE
6/ - 16.5 V < V < -13.5 V, V = 5 V, V = +15 V and -12.6 V < V < - 11. 4 V,
EE LOGIC CC EE
V = 5 V, V = +12 V.
LOGIC CC
7/ Reference should be buffered for operation on +12 V suppli es. External load shoul d not change
duri ng conversion.
8/ For devices t ypes 01, 02, and 04, 12/8
is not TTL compat i ble, must be hard-wi r ed to V or
LOGIC
digi tal comm on.
9/ Puls e width i s measured at the Schot t ky TTL input logic threshold vol t age (1.3 V) .
10/ t and t are measured from t he point when the i nput signal cr osses the Schottky TTL
DS DSC
logi c threshold voltage (1.3 V) t o when the STS output r eaches 2. 4 V. No external l oading
is applied to STS.
11/ t , t , and t ar e measured from the point when t he input si gnal crosses the Schott ky
HDR HD HL
TTL logi c threshold voltage (1.3 V) , t o when the output volt age has m oved 0.5 V in the di r ection
of i t s f inal hi gh im pedance output voltage. Each individual dat a bit (DBO - DB11) i s measured
for both logi c one to "high Z" and logi c zero to "high Z" transiti ons. External loading is as
shown on figur e 7.
12/ t and t are measured from the point when t he input si gnal crosses the Schott ky TTL
DDR DD
logi c t hr eshold vol t age (1.3 V), t o when the out put cr osses ei t her 2.4 V for a l ogic one, or
0.4 V for a logic zero. Each i ndividual dat a bit (DBO - DB11) i s measured f or bot h "hi gh Z" to
logi c zero transi t ions. External loadi ng i s as shown on figure 8.
13/ t is m easured as the tim e from when the STS line crosses t he 1.0 V level, going positi v e, to
C
when it crosses the 1.0 V l evel goi ng negative. No external l oadi ng is appli ed to STS.
14/ Guar ant eed by design.
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DESC FORM 193A
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Device types
01 and 02
03 and 04
Case outlines
X and 3
X
Terminal number
Terminal symbol
1
+5 V supply (V )
+5 V supply (V )
LOGIC LOGIC
2
Data mode select (12/8
)
Data mode select (12/8
)
3
Chip select (C
S
)
Chip sel ect (C
S
)
4
Byte address/short cycle (A )
Byte address/short cycle (A )
OO
5
Read/convert (R/C
)
Read/convert ( R/C
)
6
Chip enable (CE)
Chip enable (CE)
7
+12 V/+15 V supply ( V )
+12 V/+15 V supply ( V )
CC CC
8
+10 V reference (REF OUT)
+10 V reference (REF OUT)
9
Analog common (AGND)
Analog common (AGND)
10
Reference input (REF IN)
Reference input (REF IN)
11
-12 V/- 15 V supply ( V )
-12 V/- 15 V supply ( V )
EE EE
12
Bipolar offset (BIP OFF)
Bipolar offset (BIP OFF)
13
10 V span input ( 10 V )
10 V span input ( 10 V )
IN IN
14
20 V span input ( 20 V )
20 V span input ( 20 V )
IN IN
15
Digital comm on (DGND)
Digi t al common (DGND)
16
DB0 (LSB)
DB0 (L SB)
17
DB1
DB1
18
DB2
DB2
19
DB3
DB3
20
DB4
DB4
21
DB5
DB5
22
DB6
DB6
23
DB7
DB7
24
DB8
DB8
25
DB9
DB9
26
DB10
DB10
27
DB11 (MSB)
DB11 (MSB)
28
Status (STS)
Status ( STS)
FIG URE 1. Term inal connections.
CE
CS
R/C
12/8
A
Operation
O
0
X
X
X
X
None
X
1
X
X
X
None
1
0
0
X
0
Ini t i at e 12-bit conversion
1
0
0
X
1
Ini t i at e 8-bit conversion
1
0
1
1
X
Enable 12-bit par al lel out put
1
0
1
0
0
Enable 8 most si gnificant bits
1
0
1
0
1
Enable 4 LSBs + 4 trailing zeros
FIG URE 2. Tr ut h t able.
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FIG URE 3. Block diagram.
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FIGURE 4. High/low pulse for R/C.
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FIG URE 5. Convert start diagram.
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FIGURE 6. Read cycle tim i ng.
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FIGURE 8. Load ci r cuit for access ti me test .
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3.8 Notification of change for device class M. For device cl ass M, DESC, DESC's agent, and the change of pr oduct ( see 6. 2
her ein) i nvolving devices acquired to this drawi ng is required for any change as defined in MIL-STD-973.
3.9 Verification and review for device class M. For device cl ass M, DESC, DESC's agent and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
avail able onshor e at the option of the reviewer.
3. 10 Microcircuit group assignment for device classes M. Device classes M devices covered by this drawing shall be in
m icrocuiruit gr oup number 93 (see MIL-M-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device class M, sampling and inspect i on pr ocedures shall be in accordance with MIL-STD-
883 (see 3.1 he re in). For de vice classes Q and V, sampli ng and i nspecti on pr ocedures shall be in accordance with MIL- I - 38535
and the device m anuf act ur er's QM plan.
4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be
conducted on all devices prior to quality conformance i nspection. For device classes Q and V, screening shal l be in accordance
with MIL- I - 38535, and shall be conducted on al l devices prior t o qualification and technol ogy conf or mance inspect i on.
4.2.1 Addi t ional criteria for device classes M.
a. Burn-in t est, method 1015 of MIL- STD-883.
(1) Test conditi on A, B, C, or D. The test ci rcuit shall be m aint ained by the m anufacturer under document
revision level control and shall be m ade av ail ab le to the prep ari ng or ac quirin g activity upon request. The
test circuit shall specif y t he inputs, out puts, biases, and power di ssipation, as applicable, i n accor dance
with t he intent specifi ed in test method 1015.
(2) T = +125
(
C, minimum.
A
b. Interim and final el ectri cal test parameters shall be as specifi ed in table II herein.
4.2.2 Addi t ional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature or approved alternatives shall be as
specified in the devi ce m anuf act ur er's QM plan i n accor dance with MIL-M-38535. The burn-i n t est shall
be su bm itted to DESC-ECS with t he certificate of compl iance and shall be under the control of the device
m anufacturer's Technol ogy Review Board (TRB) i n accor dance with MIL-I - 38535.
b. I nt erim and final elect r i c al t est parameter s shal l be as specifi ed in table II A herein.
c. Addi tional screening for device class V beyond the requirem ent s of device cl ass Q shall be as specifi ed in
appendix B of MIL- I-38535.
4.3 Q ual ific at ion inspection.
4. 3. 1 Q ua li f ic ation inspection for device classes Q and V. Q ualifi cation inspection for device classes Q and V shall be in
accordance wit h MIL-I - 38535. I nspecti ons to be perfor med shal l be t hose speci f ied i n MIL- I-38535 and herein for groups A, B,
C, D, and E inspecti ons ( see 4. 4. 1 through 4.4. 4) .
4.4 Confor mance inspection. Q ual ity confor mance inspect ion for device class M shall be in accordance with
MIL-STD-883 ( s ee 3.1 herein) and as specif i ed her ein. I nspections t o be per f or med for device cl ass M shall be those specif ied
in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology
conformance inspection for classes Q and V shall be in acccordance with MIL-I-38535 including groups A, B, C, D, and E
inspections and as specified herei n except where option 2 of MIL-I-38535 permits alternate in-li ne control testing.
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DESC FORM 193A
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TABLE I I. Electrical te s t re quirements.
Test requirements Subgr oups
(in accordance w ith
MIL-STD-883, TM
5005, table I)
Subgroups
(in accordance w ith
MIL-I-38535, t able III)
Device
class M Device
class Q Device
class V
Interim electrical
parameters (see 4.2) 111
Final electrical
parameters (see 4.2) 1,2,3, 1/ 1,2,3 1/ 1,2,3, 2/
Group A test
requirements (see 4.4) 1,2,3,7
8,9,10,11 2/1,2,3,7,
8,9,10,11 2/ 1,2,3,7,
8,9,10,11 2/
Group C end-point electrica l
parameters (see 4.4) 111
Group D end-point electrica l
parameters (see 4.4) 111
1/ PDA applies t o subgroup 1.
2/ PDA applies t o subgroups 1 and 7.
4.4. 1 G r oup A i nspecti on.
a. Tests shal l be as speci f ied i n t able II herein.
b. For device cl ass M, subgroups 7 and 8 test s s hall be suff icient to veri fy the truth t ab le. F or dev ice classes
Q and V, subgroups 7 and 8 shall i nclude verifying the functionality of t he devi ce; these tests shal l have
been fault graded in accordance wi th MIL-STD-883, t est met hod 5012 ( see 1. 5 herein).
c. Subgroups 4, 5, and 6 in table I, method 5005 of MIL- STD-883 shal l be omit t ed.
4.4. 2 Group C inspection. The group C inspection end-poi nt electri cal paramet ers shallbe as specified i n t able I I herein.
4.4.2.1 Additi onal cr iteria for device classes M. St eady-stat e li f e test condit i ons, m ethod 1005 of MIL- STD-883:
a. Test conditio n A, B , C , or D. The test cir cu it shall be mainta ined by the manufact ur er under docum ent revision l evel
control and shall be made avail abl e to the preparing or acqui r ing activity upon request. The test circuit shall speci f y
the inputs, outputs, biase s, and powe r dissipation, as applicabl e, in accor dance with t he intent specified in test met hod
1005.
b. T = +125
(
C, minimum.
A
c. Test durati on: 1, 000 hours, except as permi t t ed by m ethod 1005 of MIL- STD-883.
4.4.2.2 Additi onal cr iteria for device classes Q and V. The steady-state life test durat ion, test condit i on and test t em peratur e
or approved alternati ves shal l be as speci fied in the devi ce m anufact urer's QM plan in accor dance wit h MIL-I-38535. The test
c i rcuit shall be m ai ntained under docum ent revision l evel contr ol by the devi ce m anuf acturer's TRB, in accordance with MIL-I -
38535, and shall be made available to the acquir ing or preparing act i vity upon request. The test cir c ui t shall specify t he inputs,
outputs, biases, and power di ssipation, as applicabl e, in accor dance with the intent specifi ed in test met hod 1005.
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DESC FORM 193A
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4.4. 5 G r oup E i nspecti on. Group E inspection is required only for par t s intended to be m ar ked as
radiation hardness assured ( see 3.5 herein). RHA levels f or device class Q shal l be M, D, R, and H and for device class M shall
be M and D.
a. End-point electri c al par ameters shall be as specified in t abl e II herein.
b. For device class M, the devices shall be subjected t o radiation har dness assured tests as specif i ed in
MIL-M-38535, appendix A, for RHA level bei ng tested. For devi ce classes Q and V, the devices or test vehicle shall
be subj ected to radiat ion hardness assured tests as specifi ed in MIL-I - 38535 f or RHA level being tested. All device
cla ss es m ust meet the postirr adiation end-point electrical par ameter lim its as defined in t able I at T = +25
(
C ±5
A
percent, after exposure, to the subgroups specified in t able II herein. .
c. When specif i ed in t he purchase or der or contr act , a copy of the RHA delta l i mi t s shall be supplied.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL- STD-883 (s ee 3.1 herein) for
devi ce class M and MIL-I- 38535 f or device classes Q and V.
6. NOTES
6. 1 I ntended use. Microcircuits conforming to this drawing are intended for use for Government m icrocircuit appl ications
(ori ginal equipment) , design appl i c at i ons, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a
contractor-pr epared specif i c at ion or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configur ati on control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,
Engineeri ng Change Proposal.
6.3 Record of users. Military and industrial users shall i nf or m Defense Electr onics Supply Cent er when a system appl icati on
requires configuration contr ol and whi ch SMD's are appl icable to that syst em . DESC will maintain a record of users and this li s t
will b e used fo r c o o rdina tio n and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) shoul d cont act DESC-ECS, telephone (513) 296- 6047.
6.4 Comments. Comments on this drawing should be directed to DESC-ECS, Dayton, Ohio 45444, or telephone (513)
296-5377.
6.5 Abbreviati ons, sym bol s, and definitions.
6.6 One part - one part numbe r system. The one part - one p art number system described bel ow has been developed to all ow
for transitions bet ween identical generic devices covered by the thr eemajor mi cr oci r cuit requirements document s ( MIL- H-38534,
MIL-I - 38535, and 1. 2.1 of MIL-STD-883) without the neces sity for the generation of unique PIN 's . T he three military requirem ents
documents represent different class levels , and pr eviousl y when a device manufacturer upgraded military product fr om one class
leve l to another, the benefits of the upgraded product were unavai l able t o t he Original Equi pment Manufacturer (O EM), t hat was
contract uall y locked into the origi nal uni que PIN. By establ ishi ng a one par t number syst em coveri ng al l three documents, the
OEM can acquire to the highest class level avai lable for a given generic device to meet syst em needs wit hout modi f ying the
ori gi nal contract par ts sel ection cr iteria.
Example PIN Manufacturing Document
Military documentation format under new system source listing listing
New MIL-H-38534 St andar di zed Military 5962- XXXXXXX( H or K)YY QML-38534 MIL- BUL-103
Drawings
New MIL-I - 38535 St andar di zed Military 5962-XXXXXXX( Q or V)YY QML-38535 MIL-BUL-103
Drawings
New 1.2.1 of MIL-STD-883 Standar dized 5962-XXXXXXX( M)YY MIL-BUL- 103 MIL-BUL-103
Military Drawings
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DESC FORM 193A
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6.7 Sources of supply.
6.7.1 Sources of supply f or device classes Q and V. Sources of suppl y f or device classes Q and V are l i st ed in Q ML-38535.
The vendors li s t ed in QML-38535 have submitted a cert ificate of compl i ance (see 3.6 herei n) t o
DESC- ECS and have agreed to this dr awi ng.
6.7.2 Appr oved sources of supply for device class M. Approved sources of suppl y f or class M are l i st ed in
MIL-BUL-103. The vendors l isted i n MIL-BUL-103 have agreed to t his drawing and a certi f icate of compliance (see 3.6 herein)
has been subm i t t ed to and accepted by DESC-ECS.
STANDARDIZED MI LITARY DRAWI NG SOURCE APPRO VAL BULL ETIN
DATE: 94-09-01
Approved sources of suppl y f or SMD 5962-91690 are list ed bel ow f or im mediate acquisit ion only and shall be added to
MIL-BUL-103 during the next revision. MIL- BUL-103 will be revised to include the addit i on or deletion of sour ces. The
vendor s l isted below have agreed to this dr awi ng and a certi ficate of compli ance has been submi t ted to and accepted by
DESC- ECS. Thi s bulletin i s superseded by the next dated revi sion of MIL-BUL-103.
Standard
microcircuit drawing
PIN
Vendor
CAGE
number
Vendor
similar
PIN 1/
Replacement
military
specification
PIN
5962-9169001MXX
5962-9169001M3X 0H9K9
0H9K9 HADC674ZAMD/883
HADC674ZAMC/883 M38510/14005BXX
---
5962-9169002MXX
5962-9169002M3X 0H9K9
0H9K9 HADC674ZBMD/883
HADC674ZBMC/883 M38510/14006BXX
---
5962-9169003MXX
5962-9169003M3X 24355
24355 AD674BTD/883B
AD674BTE/883B M38510/14006BXX
---
5962-9169004MXX 33256 SP674AT/B M38510/14006BXX
1/Caution. Do not use this num ber for it em
acquisition. Items acquired to this num ber may not
satisfy the perf orma nce requireme nts of this drawing.
Vendor CAGE Vendor nam e
numbe r and addres s
0H9K9 Signal Processing Technologi es , Incorpor ated
1510 Qua il Lake Loop
Colorado Springs , CO 80906
24355 Analog Devices
804 Woburn Street
Wilmington, MA 01887
33256 Sipex Corporation
22 Linnell Circle
Billerica, MA 01821-3985
The information cont ained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bul letin.
