22 GHz to 32 GHz,
GaAs, MMIC, I/Q Mixer
Data Sheet
HMC524ALC3B
Rev. A Document Feedback
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FEATURES
Passive: no dc bias required
Conversion loss: 9 dB (typical)
Image rejection: 20 dB (typical)
LO to RF isolation: 35 dB (typical)
LO to IF isolation: 25 dB (typical)
IP3: 18 dBm (typical)
P1dB: 17 dBm (typical)
IF pin frequency: dc − 4.5 GHz
12-lead, 3 mm × 3 mm SMT ceramic package
APPLICATIONS
Point to point radios
Point to multipoint radios and VSAT
Test equipment and sensors
Military end use
FUNCTIONAL BLOCK DIAGRAM
PACKAGE
BASE
GND
13605-001
90°HYBRID
HMC524ALC3B
1GND
7GND
8GND
9LO
10
GND
11
NIC
12
NIC
4
IF1
2
RF
3
GND
5
NIC
6
IF2
Figure 1.
GENERAL DESCRIPTION
The HMC524ALC3B is a compact gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), in phase
quadrature (I/Q) mixer in a leadless RoHS compliant surface-
mount (SMT) ceramic package. This device can be used as either
an image reject mixer or a single-sideband upconverter. The
mixer uses two standard, double balanced mixer cells and a 90°
hybrid coupler fabricated in a GaAs, metal–semiconductor field
effect transistor (MESFET) process. A low frequency quadrature
hybrid produces a 100 MHz IF output.
This device is a much smaller alternative to hybrid style image
reject mixers and single-sideband upconverter assemblies. The
HMC524ALC3B eliminates the need for wire bonding, allowing
use of surface-mount manufacturing techniques.
HMC524ALC3B Data Sheet
Rev. A | Page 2 of 24
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance: IFOUT = 100 MHz, Upper
Sideband (Low-Side LO) ............................................................. 6
Downconverter Performance: IF = 100 MHz, Lower Sideband
(High-Side LO) ............................................................................. 8
Downconverter Performance: IF = 2500 MHz, Upper
Sideband (Low-Side LO) ........................................................... 10
Downconverter Performance: IF = 2500 MHz, Lower
Sideband (High-Side LO) .......................................................... 11
Downconverter Performance: IF Bandwidth, Upper Sideband
(Low-Side LO) ............................................................................ 12
Downconverter Performance: IF Bandwidth, Lower Sideband
(High-Side LO) ........................................................................... 13
Upconverter Performance: IFIN = 100 MHz, Upper Sideband
(Low-Side LO) ............................................................................ 14
Upconverter Performance: IFIN = 100 MHz, Lower Sideband
(High-Side LO) ........................................................................... 15
Upconverter Performance: IFIN = 2500 MHz, Upper Sideband
(Low-Side LO) ............................................................................ 16
Upconverter Performance: IFIN = 2500 MHz, Lower Sideband
(High-Side LO) ........................................................................... 17
Amplitude/ Phase Balance, Downconverter: IFOUT = 100 MHz
....................................................................................................... 18
Isolation and Return Loss ......................................................... 19
M × N Spurious Output Performance ..................................... 20
Theory of Operation ...................................................................... 21
Applications Information .............................................................. 22
Layout .......................................................................................... 22
Outline Dimensions ....................................................................... 24
Ordering Guide .......................................................................... 24
REVISION HISTORY
5/2018—Rev. 0 to Rev. A
Changes to Table 2 ............................................................................ 4
Changes to Applications Information Section ............................ 22
Changes to Figure 80 ...................................................................... 22
2/2018—Revision 0: Initial Version
Data Sheet HMC524ALC3B
Rev. A | Page 3 of 24
SPECIFICATIONS
TA = 25°C, IF = 100 MHz, LO drive level = 17 dBm, upper sideband. All measurements performed on the evaluation printed circuit board (PCB).
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
FREQUENCY
Radio Frequency (RF) Pin 22 32 GHz
Intermediate Frequency (IF) Pin DC 4.5 GHz
Local Oscillator (LO) Pin 22 32 GHz
LO DRIVE LEVEL 17 dBm
RF PERFORMANCE
Downconverter (IFOUT)
Conversion Loss
13
dB
Image Rejection 18 20 dB
Input Third Order Intercept (IP3) 13.5 18 dBm
Input 1 dB Compression Point (P1dB) 17 dBm
Noise Figure Taken with LO amplifier 15 dB
Amplitude Balance Taken without external 90° hybrid 0.5 dB
Phase Balance Taken without external 90° hybrid 5 Degrees
Upconverter IFIN
Conversion Loss 6 dB
Sideband Rejection 26 dB
IIP3
dBm
P1dB 4.5 dBm
Isolation Taken without external 90° hybrid
LO to RF 24 35 dB
LO to IF 25 dB
RF to IF 36 dB
Return Loss Taken without external 90° hybrid
LO 7 dB
RF 13 dB
IF 6 dB
HMC524ALC3B Data Sheet
Rev. A | Page 4 of 24
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF/IF Input Power 20 dBm
LO Input Power
25 dBm
IF Source/Sink Current 2 mA
Reflow Temperature 260°C
Maximum Junction Temperature (TJ) 175°C
Lifetime at Maximum TJ >1 × 106 hours
Continuous Power Dissipation, PDISS1
(TA = 85°C, Derate 6.22 mW/°C Above 85°C)
560 mW
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering 60 sec) 260°C
Moisture Sensitivity Level (MSL)2 MSL3
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 1000 V
Field Induced Charged Device Model
(FICDM)
1250 V
1 PDISS is a theoretical number calculated by (TJ − 85°C)/θJC.
2 Based on IPC/JEDEC J-STD-20 MSL classifications.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to PCB design and
operating environment. Careful attention to PCB thermal
design is required.
θJA is the natural convection junction-to-ambient thermal
resistance measured in a one cubic foot sealed enclosure. θJC is
the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type1 θJA θJC Unit
E-12-4 120 161 °C/W
1 Test Condition 1: JEDEC standard JESD51-2.
ESD CAUTION
Data Sheet HMC524ALC3B
Rev. A | Page 5 of 24
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC524ALC3B
NOTES
1. NIC = NO INT ERNAL CONNECTI ON. T HESE
PINS ARE N OT CONNECTED INTERNAL LY .
2. EXPOSED PAD. THE EXPOSED PAD MUST
BE CONNE CTED TO THE GND PI N.
13605-002
TO P V I EW
(No t to Scale)
1
GND
7
GND
8
GND
9
LO
10
GND
11
NIC
12
NIC
4
IF1
2
RF
3
GND
5
NIC
6
IF2
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 3, 7, 8, 10 GND Ground Connect. These pins and package bottom must be connected to RF/dc ground.
2 RF Radio Frequency Port. This pin is ac coupled and matched to 50 Ω.
4 IF1
First Quadrature Intermediate Frequency Output Pin. For applications not requiring operation to dc, use an off
chip dc blocking capacitor. For operation to dc, these pins must not source/sink more than 2 mA of current or
device nonfunction and possible device failure results.
5, 11, 12 NIC No Internal Connection. These pins are not connected internally.
6 IF2
Second Quadrature Intermediate Frequency Output Pin. For applications not requiring operation to dc, use an
off chip dc blocking capacitor. For operation to dc, these pins must not source/sink more than 2 mA of current or
device nonfunction and possible device failure results.
9 LO Local Oscillator Port. The pin is dc coupled and matched to 50 Ω.
EPAD Exposed Pad. The exposed pad must be connected to the GND pin.
INTERFACE SCHEMATICS
G
ND
13605-003
Figure 3. GND Interface Schematic
R
F
13605-004
Figure 4. RF Interface Schematic
IFx
13605-005
Figure 5. IFx Interface Schematic
LO
13605-006
Figure 6. LO Interface Schematic
HMC524ALC3B Data Sheet
Rev. A | Page 6 of 24
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE: IFOUT = 100 MHz, UPPER SIDEBAND (LOW-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
23 25 27 29 31
13605-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
21 33
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
23 25 27 29 31
13605-008
Figure 8. Image Rejection vs. RF Frequency at Various Temperatures
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
23 25 27 29 31
13605-009
Figure 9. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-011
Figure 11. Image Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-012
Figure 12. Input IP3 vs. RF Frequency at Various LO Powers,
TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 7 of 24
25
0
INPUT P1dB (dBm)
5
10
15
20
21 33
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
23 25 27 29 31
13605-013
Figure 13. Input P1dB vs. RF Frequency at Various Temperatures
30
25
0
NOISE FIGURE (dB)
5
10
15
20
RF FREQ UE NCY ( GHz)
13605-114
22 3223 24 25 26 27 28 29 30 31
+85°C
+25°C
–40°C
Figure 14. Noise Figure vs. RF Frequency at Various Temperatures
25
0
INPUT P1dB (dBm)
5
10
15
20
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-014
Figure 15. Input P1dB vs. RF Frequency at Various LO Powers, TA = 25°C
22 3223 24 25 26 27 28 29 30 31
30
25
0
NOISE FIGURE (dB)
5
10
15
20
RF FREQ UE NCY ( GHz)
13605-116
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
Figure 16. Noise Figure vs. RF Frequency at Various LO Powers, TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 8 of 24
DOWNCONVERTER PERFORMANCE: IF = 100 MHz, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-015
Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-016
Figure 18. Image Rejection vs. RF Frequency at Various Temperatures
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-017
Figure 19. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-018
Figure 20. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-019
Figure 21. Image Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-020
Figure 22. Input IP3 vs. RF Frequency at Various LO Powers,
TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 9 of 24
25
0
INPUT P1dB (dBm)
5
10
15
20
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-021
Figure 23. Input P1dB vs. RF Frequency at Various Temperatures
25
0
INPUT P1dB (dBm)
5
10
15
20
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-022
Figure 24 Input P1dB vs. RF Frequency at Various LO Powers, TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 10 of 24
DOWNCONVERTER PERFORMANCE: IF = 2500 MHz, UPPER SIDEBAND (LOW-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CON VE RS IO N G A I N (dB)
RF F RE QUENCY (G Hz )
23 25 27 29 31
+85°C
+25°C
–40°C
13605-023
Figure 25. Conversion Gain vs. RF Frequency at Various Temperatures
55
021 33
IMAGE REJ E CTION (d Bc)
5
10
15
20
25
30
35
40
45
50
RF F RE QUENCY (G Hz )
+85°C
+25°C
–40°C
23 25 27 29 31
13605-024
Figure 26. Image Rejection vs. RF Frequency at Various Temperatures
30
0
INPUT IP3 (dBm)
5
10
15
20
25
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-025
Figure 27. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CON VE RS IO N G A I N (dB)
RF FREQUENC Y (GH z )
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-026
Figure 28. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
55
021 33
IMAG E R EJECTI ON ( dBc)
5
10
15
20
25
30
35
40
45
50
RF FREQUENC Y (GH z )
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17d Bm
LO =19dBm
13605-027
Figure 29. Image Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
30
0
INPUT IP3 (dBm)
5
10
15
20
25
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dB m
LO = 15dB m
LO = 17dBm
LO = 19dBm
13605-028
Figure 30. Input IP3 vs. RF Frequency at Various LO Powers, TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 11 of 24
DOWNCONVERTER PERFORMANCE: IF = 2500 MHz, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-029
Figure 31. Conversion Gain vs. RF Frequency at Various Temperatures
35
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-030
Figure 32. Image Rejection vs. RF Frequency at Various Temperatures
35
0
INPUT I P 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-031
Figure 33. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-032
Figure 34. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-033
Figure 35. Image Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INPUT I P 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-034
Figure 36. Input IP3 vs. RF Frequency at Various LO Powers,
TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 12 of 24
DOWNCONVERTER PERFORMANCE: IF BANDWIDTH, UPPER SIDEBAND (LOW-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm at 24 GHz, unless otherwise noted.
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
13605-035
Figure 37. Conversion Gain vs. IF Frequency at Various Temperatures
+85°C
+25°C
–40°C
55
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
40
45
50
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
13605-036
Figure 38. Image Rejection vs. IF Frequency at Various Temperatures
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
+85°C
+25°C
–40°C
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
13605-037
Figure 39. Input IP3 vs. IF Frequency at Various Temperatures
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-038
Figure 40. Conversion Gain vs. IF Frequency at Various LO Powers,
TA = 25°C
55
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
40
45
50
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-039
Figure 41. Image Rejection vs. IF Frequency at Various LO Powers,
TA = 25°C
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-040
Figure 42. Input IP3 vs. IF Frequency at Various LO Powers,
TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 13 of 24
DOWNCONVERTER PERFORMANCE: IF BANDWIDTH, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 17 dBm at 24 GHz, unless otherwise noted.
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
13605-041
Figure 43. Conversion Gain vs. IF Frequency at Various Temperatures
55
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
40
45
50
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
+85°C
+25°C
–40°C
13605-042
Figure 44. Image Rejection vs. IF Frequency at Various Temperatures
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
+85°C
+25°C
–40°C
13605-043
Figure 45. Input IP3 vs. IF Frequency at Various Temperatures
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-044
Figure 46. Conversion Gain vs. IF Frequency at Various LO Powers,
TA = 25°C
55
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
40
45
50
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-045
Figure 47. Image Rejection vs. IF Frequency at Various LO Powers,
TA = 25°C
30
0
INPUT I P 3 ( dBm)
5
10
15
20
25
IF FRE QUENCY ( GHz)
0.5 1.5 2.0 3.0 3.51.0 2.5 4.0 4.5
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-046
Figure 48. Input IP3 vs. IF Frequency at Various LO Powers,
TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 14 of 24
UPCONVERTER PERFORMANCE: IFIN = 100 MHz, UPPER SIDEBAND (LOW-SIDE LO)
Data taken as a single sideband upconverter with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
21 3323 25 27 29 31
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
13605-047
Figure 49. Conversion Gain vs. RF Frequency at Various Temperatures
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
13605-048
Figure 50. Sideband Rejection vs. RF Frequency at Various Temperatures
35
0
INPUT I P 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-049
Figure 51. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-050
Figure 52. Conversion Gain vs. RF Frequency at Various LO Powers
TA = 25°C
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-051
Figure 53. Sideband Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INPUT I P 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-052
Figure 54. Input IP3 vs. RF Frequency at Various LO Powers, TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 15 of 24
UPCONVERTER PERFORMANCE: IFIN = 100 MHz, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as a single sideband upconverter with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-053
Figure 55. Conversion Gain vs. RF Frequency at Various Temperatures
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
13605-054
Figure 56. Sideband Rejection vs. RF Frequency at Various Temperatures
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-055
Figure 57. Input IP3 vs. RF Frequency at Various Temperatures
21 3323 25 27 29 31
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-056
Figure 58. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-057
Figure 59. Sideband Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-058
Figure 60. Input IP3 vs. RF Frequency at Various LO Powers, TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 16 of 24
UPCONVERTER PERFORMANCE: IFIN = 2500 MHz, UPPER SIDEBAND (LOW-SIDE LO)
Data taken as a single sideband upconverter with external 90°hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-059
Figure 61. Conversion Gain vs. RF Frequency at Various Temperatures
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
13605-060
Figure 62. Sideband Rejection vs. RF Frequency at Various Temperatures
35
0
INPUT I P 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-061
Figure 63. Input IP3 vs. RF Frequency at Various Temperatures
21 3323 25 27 29 31
0
–5
–10
–15
–20
CONVE RS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-062
Figure 64. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-063
Figure 65. Sideband Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-064
Figure 66. Input IP3 vs. RF Frequency at Various LO Powers, TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 17 of 24
UPCONVERTER PERFORMANCE: IFIN = 2500 MHz, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as a single sideband upconverter with external 90° hybrid at the IF ports, LO = 17 dBm, unless otherwise noted.
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF F RE QUENCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-065
Figure 67. Conversion Gain vs. RF Frequency at Various Temperatures
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
13605-066
Figure 68. Sideband Rejection vs. RF Frequency at Various Temperatures
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
+85°C
+25°C
–40°C
13605-067
Figure 69. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–2021 33
CONVE RS IO N GAI N ( dB)
RF F RE QUENCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-068
Figure 70. Conversion Gain vs. RF Frequency at Various LO Powers,
TA = 25°C
65
0
SIDE BAND RE JE CTI ON (dBc)
5
10
15
20
25
30
35
40
45
50
55
60
21 3323 25 27 29 31
RF FREQ UE NCY ( GHz)
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-069
Figure 71. Sideband Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
21 33
RF FREQ UE NCY ( GHz)
23 25 27 29 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-070
Figure 72. Input IP3 vs. RF Frequency at Various LO Powers, TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 18 of 24
AMPLITUDE/ PHASE BALANCE, DOWNCONVERTER: IFOUT = 100 MHz
Data taken at various LO powers.
3
2
1
0
–1
–2
–322 32
AMPLITUDE BALANCE ( dB)
RF FREQ UE NCY ( GHz)
23 24 25 26 27 28 29 30 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-071
Figure 73. Amplitude Balance vs. RF Frequency at Various LO powers, Upper
Sideband, TA = 25°C
20
10
0
–10
–20
PHASE BALANCE ( Degrees)
22 32
RF FREQ UE NCY ( GHz)
23 24 25 26 27 28 29 30 31
LO = 13dBm
LO = 15dBm
LO = 17dBm
LO = 19dBm
13605-072
Figure 74. Phase Balance vs. RF Frequency at Various LO Powers,
Upper Sideband, TA = 25°C
22 32
23 24 25 26 27 28 29 30 31
3
2
–3
AMPLITUDE BALANCE ( dB)
–2
–1
0
1
RF FREQ UE NCY ( GHz)
13605-175
LO = 13d Bm
LO = 15d Bm
LO = 17d Bm
LO = 19d Bm
Figure 75. Amplitude Balance vs. RF Frequency at Various LO powers, Lower
Sideband, TA = 25°C
22 32
23 24 25 26 27 28 29 30 31
20
–20
PHASE BALANCE (Degrees)
–10
0
10
RF FREQ UE NCY ( GHz)
13605-176
LO = 13d Bm
LO = 15d Bm
LO = 17d Bm
LO = 19d Bm
Figure 76. Phase Balance vs. RF Frequency at Various LO Powers,
Lower Sideband, TA = 25°C
Data Sheet HMC524ALC3B
Rev. A | Page 19 of 24
ISOLATION AND RETURN LOSS
70
021 33
ISOLATION (dB)
RF FREQ UE NCY ( GHz)
LO_RF
LO-IF2
LO-IF1
RF-IF1
RF-IF2
10
20
30
40
50
60
23 25 27 29 31
13605-073
Figure 77. Isolation vs. RF Frequency at LO = 17 dBm, TA = 25°C
0
–5
–15
–10
–20
–2521 23 25 27 29 31 33
RETURN LO S S ( dB)
RF FREQ UE NCY ( GHz)
LO
RF
13605-074
Figure 78. Return Loss vs. RF Frequency,
LO = 17 dBm, TA = 25°C
0
–5
–15
–10
–20
–250.1 4.6
RET URN LOS S ( dB)
IF FRE QUENCY ( GHz)
0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1
IF1
IF2
13605-075
Figure 79. Return Loss vs. IF Frequency,
LO = 17 dBm at 27 GHz, TA = 25°C
HMC524ALC3B Data Sheet
Rev. A | Page 20 of 24
M × N SPURIOUS OUTPUT PERFORMANCE
Downconverter, M × N
RF = 24.5 GHz, LO = 24.4 GHz, RF power = −10 dBm, and
LO power = 17 dBm, data taken without external hybrid. Mixer
spurious products are measured in dBc from the IF output power
level (M × RF) − (N × LO) are positive. N/A means not applicable.
N × LO
0 1 2 3 4 5
M × RF
0 N/A −2 +39 N/A N/A N/A
1 +28 0 +52 +58 N/A N/A
2 +61 +72 +56 +73 +59 N/A
3
N/A
+95
+73
+66
+73
+59
4 N/A N/A +125 +73 +83 +73
5 N/A N/A N/A +159 +70 +85
Upconverter, M × N
IF = 100 MHz, LO = 24.4 GHz, IF power = −10 dBm, and
LO power = 17 dBm, data taken without external hybrid. Mixer
spurious products are measured in dBc from the RF output
power level (M × IF) + (N × LO) are positive, unless otherwise
noted.
N × LO
0 1 2
M × IF
−5 +90 +79 +67
−4 +90 +72 +68
−3 +91 +52 +67
−2 +68 +40 +58
−1 +88 0 +32
0 0 −5 +22
+1 +89 0 +32
+2 +67 +41 +58
+3 +89 +52 +69
+4 +89 +74 +67
+5 +88 +77 +67
Data Sheet HMC524ALC3B
Rev. A | Page 21 of 24
THEORY OF OPERATION
The HMC524ALC3B is a compact GaAs MMIC I/Q mixer in a
leadless RoHS compliant SMT ceramic package. This device is
either an image reject mixer or a single-sideband upconverter.
When used as an image reject mixer, the HMC524ALC3B
downconverts radio frequencies between 22 GHz and 32 GHz to
intermediate frequencies between dc and 4.5 GHz.
When used as single-sideband upconverter, the HMC524ALC3B
upconverts IF between dc and 4.5 GHz to RF between 22 GHz
and 32 GHz
HMC524ALC3B Data Sheet
Rev. A | Page 22 of 24
APPLICATIONS INFORMATION
Figure 80 shows the typical application circuit for the
HMC524ALC3B. To select the appropriate sideband, an external
90° hybrid coupler is needed. For applications not requiring
operation to dc, use an off chip dc blocking capacitor. For
applications that require the LO signal at the output to be
suppressed, use a bias tee or RF feed as shown in Figure 80.
Ensure that the source or sink current used for LO suppression
is <2 mA for each IF port to prevent damage to the device. The
common-mode voltage for each IF port is 0 V.
To select the upper sideband when using as an upconverter,
connect the IF1 pin to the 90° port of the hybrid and connect
the IF2 pin to the 0° port of the hybrid. To select the lower
sideband, connect the IF1 pin to the 0° port of the hybrid and
connect the IF2 pin to the 90° port of the hybrid. The input is
from the sum port of the hybrid, and the difference port is 50 Ω
terminated.
To select the upper sideband (low-side LO) when using as a
downconverter, connect the IF1 pin to the 0° port of the hybrid
and connect the IF2 pin to the 90° port of the hybrid. To select
the lower sideband (high-side LO), connect the IF1 pin to the
90° port of the hybrid and connect the IF2 pin to the 0° port of
the hybrid. The output is from the sum port of the hybrid, and
the difference port is 50 Ω terminated.
LO
1
7
8
9
101112
4
2
3
56
90°HYBRID
RF
IF1 IF2
HMC524ALC3B EVALUATION BOARD
13605-076
50ΩIF
SUPPLY
FOR IF1
SUPPLY
FOR IF2
BIAS TEE/
DC FEED FOR IF2
BIAS TEE/
DC FEED FOR IF1 DC BLOCKING
CAPACITORS
EXTERNAL
90° HYBRID
NOTES
1. DASHED SECTIONS ARE OPTIONAL AND MEANT FOR LO NULLING.
Figure 80. Typical Application Circuit Evaluation Board Information
The EV1HMC524ALC3B evaluation PCB used in the application
must use RF circuit design techniques. Signal lines must have 50 Ω
impedance, and connect the package ground leads and exposed
pad directly to the ground plane similarly to Figure 82. Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation circuit board shown in Figure 82 is
available from Analog Devices, Inc., upon request.
LAYOUT
Solder the exposed pad on the underside of the HMC524ALC3B
to a low thermal and electrical impedance ground plane. This
pad is typically soldered to an exposed opening in the solder mask
on the evaluation board. Connect these ground vias to all other
ground layers on the evaluation board to maximize heat dissipation
from the device package. Figure 81 shows the PCB land pattern
footprint for the EV1HMC524ALC3B evaluation board.
13605-181
Figure 81. PCB Land Pattern Footprint of the EV1HMC524ALC3B
Data Sheet HMC524ALC3B
Rev. A | Page 23 of 24
13605-077
Figure 82. EV1HMC524ALC3B (113733-1) Evaluation PCB Top Layer
Table 5. Bill of Materials for the EV1HMC524ALC3B (113733-1) Evaluation PCB
Quantity Reference Designator Description Part Number
1 113733-1 PCB, EV1HMC524ALC3B 113733-1
2 J1 (connects to RF),
J2 (connects to LO)
2.92 mm subminiature version A (SMA) connectors, SRI connector gage 104935
2 J3 (connects to IF1), J4 (connects
to IF2)
Gold plated SMA, edge mount with 0.02 inch pin connectors, Johnson
SMA connectors
105192
1
U1
Device under test, HMC524ALC3B
HMC524ALC3B
HMC524ALC3B Data Sheet
Rev. A | Page 24 of 24
OUTLINE DIMENSIONS
03-02-2017-A
PKG-004837
0.50
BSC
0.32
BSC
BOTTOM VIEW
TOP VIEW
SIDE VIEW
0.08
BSC
1
4
6
7
9
10 12
3
FOR PRO P E R CONNECTION O F
THE EXPOSED PAD, REFER TO
THE P I N CONF IG URATION AND
FUNCTION DES CRIPT IO NS
SECTION OF THIS DATA SHEET.
0.36
0.30
0.24
PI N 1
EXPOSED
PAD
PI N 1
INDICATOR
3.05
2.90 S Q
2.75
2.10 BS C
1.00 RE F
1.60
1.50 S Q
1.40
0.90
0.80
0.70
SEATING
PLANE
Figure 83. 12-Terminal Ceramic Leadless Chip Carrier (LCC)
(E-12-4)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Body Material Lead Finish Package Description Package Option
HMC524ALC3B −40°C to +85°C Alumina Ceramic Gold over Nickel 12-Terminal LCC E-12-4
HMC524ALC3BTR −40°C to +85°C Alumina Ceramic Gold over Nickel 12-Terminal LCC E-12-4
HMC524ALC3BTR-R5
−40°C to +85°C
Alumina Ceramic
Gold over Nickel
12-Terminal LCC
E-12-4
EV1HMC524ALC3B Evaluation Board
1 All models are RoHS compliant parts.
©2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13605-0-5/18(A)