MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 80 (7) 20 B2 E2 27 6.5 10.5 13 10.5 34 20 B2 E2 C2E1 C2E1 E2 C1 E2 C1 E1 B1 12 E1 B1 Tab#110, t=0.5 (8) LABEL 22.5 31 6.5 M5 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A -IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25C 350 W IB Base current DC 4.5 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 210 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 75 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=75A (diode forward voltage) -- -- 1.85 V hFE DC current gain IC=75A, VCE=2V/5V 75/100 -- -- -- -- -- 2.5 s Switching time VCC=300V, IC=75A, IB1=-IB2=1.5A -- -- 12 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.35 C/ W Diode part (per 1/2 module) -- -- 1.3 C/ W Conductive grease applied (per 1/2 module) -- -- 0.15 C/ W IC=75A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 2 Tj=25C DC CURRENT GAIN hFE 160 IB=2.0A IB=1.5A 120 IB=1.0A IB=0.5A 80 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 1 7 5 4 3 2 10 0 7 5 4 3 2 1.4 1.8 2.2 VCE=2.0V Tj=25C 3.0 2.6 BASE-EMITTER VOLTAGE 101 7 5 4 3 2 IB=1A Tj=25C Tj=125C VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 -1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 3 2 IC=75A IC=50A Tj=25C IC=30A Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1 ton, ts, tf (s) IC=100A SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 3 4 5 7 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VBE (V) 5 1 VCE=2.0V 10 2 7 5 4 3 2 10 0 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 -1 1.0 10 3 7 5 4 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0 ts VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C tf ton 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0 160 VCC=300V IC=75A IB1=1.5A ts COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 2 tf Tj=25C Tj=125C 2 3 4 5 7 10 1 140 IB2=-2A 120 100 IB2=-5A 80 60 40 20 Tj=125C 0 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) 0 COLLECTOR-EMITTER VOLTAGE 100 tw=50s D 10 C m s 100s 5 1m 00 s s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.5 0.4 Zth (j-c) (C/ W) SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) 10 2 7 5 3 2 VCE (V) DERATING FACTOR OF F. B. S. O. A. 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 100 200 300 400 500 600 700 800 TIME (s) 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (C) Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 VCC=300V IB1=-IB2=1.5A Tj=25C Tj=125C Irr Qrr 10 1 7 5 4 3 2 10 0 10 0 10 0 trr (s) 800 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/