AP3990I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS(ON) 0.6 ID G 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 10 A ID@TC=100 Continuous Drain Current, V GS @ 10V 6.5 A 40 A 31.3 W 50 mJ 10 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 1 200809231 AP3990I o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 3 Min. Typ. Max. Units VGS=0V, ID=1.0mA 600 - - V VGS=10V, ID=5.0A - - 0.6 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4.5 V gfs Forward Transconductance VDS=10V, ID=5A - 5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA Drain-Source Leakage Current (T j=150 C) VDS=480V, VGS=0V - - 250 uA Gate-Source Leakage VGS=30V - - 100 nA ID=10A - 34 57 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 11 - nC 3 td(on) Turn-on Delay Time VDD=300V - 19 - ns tr Rise Time ID=10A - 28 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 43 - ns tf Fall Time RD=30 - 22 - ns Ciss Input Capacitance VGS=0V - 2030 3250 pF Coss Output Capacitance VDS=25V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF Min. Typ. IS=10A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 600 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 12 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25 , IAS=10A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP3990I 20 12 o T C =25 C 10V 7 .0V 6 .0V 10 ID , Drain Current (A) 16 ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 12 8 8 V G =5 0V 6 4 4 2 V G =5.0V 0 0 0 5 10 15 0 20 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.2 1.3 I D =5A V G =10V 2.8 Normalized RDS(ON) Normalized BVDSS (V) 1.2 1.1 1 2.4 2 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 10 1.4 IS (A) T j = 150 o C Normalized VGS(th) (V) 1.2 T j = 25 o C 1 1 0.8 0.6 0.1 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP3990I f=1.0MHz 3200 I D =10A V DS =480V 12 2400 C (pF) VGS , Gate to Source Voltage (V) 16 8 C iss 1600 4 800 0 0 0 20 40 60 C oss C rss 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 ID (A) 10 100us 1ms 10ms 1 100ms 0.1 DC o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 L4 MIN NOM MAX A 4.30 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L 12.50 13.00 13.50 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 e ---- 3.20 ---- ---- 2.54 ---- L3 A1 b1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. L b c e Part Marking Information & Packing : TO-220CFM Part Number LOGO 3990I Package Code YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5