DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
ZENER DIODES
RD2.0F to RD82F
ZENER DIODES
1 W DO-41 GLASS SEALED PACKAGE
Document No. D13936EJ3V0DS00 (3rd edition)
(Previous No. SC-1007A)
Date Published June 2000 N CP(K)
Printed in Japan ©1982
DESCRIPTION
NEC type RD∗∗F Series are DHD (Double Heatsink Diode)
Construction planar type zener diodes possessing an allowable
power dissipation of 1 watt.
FEATURES
• DHD (Double Heatsink Diode) Construction
• Planar process
•V
Z: Applied E24 standard
• DO-41 Glass sealed package
APPLICATIONS
Circuits for,
Constant Voltage, Constant Current,
Wave form clipper, Surge absorber, etc.
MAXIMUM RATINGS (TA = 25°
°°
°C)
Power Dissipation (P) 1 W (See Fig. 1)
Forward Current (IF) 200 mA
Junction Temperature (Tj) 175°C
Storage Temperature (Tstg)−65 to +175°C
Peak Reverse Power (PRSM) See Fig. 9
PACKAGE DIMENSIONS
(Unit: mm)
φ
0.8
Cathode
indication
φ
3.0 MAX.
25 MIN.5 MAX.25 MIN.
Data Sheet D13936EJ3V0DS00
2
RD2.0F to RD82F
ELECTRICAL CHARACTERISTICS (TA = 25 ±
±±
± 2°
°°
°C)
Type Number Zener Voltage
VZ (V)Note 1 Dynamic Impedance
ZZ (Ω)Note 2 Reverse Current
IR (
µ
A)
Suffix MIN. MAX. IZ (mA) MAX. IZ (mA) MAX. VR (V)
B1 1.88 2.12
RD2.0F B B2 2.01 2.25 40 25 40 200 0.5
B1 2.11 2.34
RD2.2F B B2 2.21 2.45 40 20 40 200 0.7
B1 2.31 2.55
RD2.4F B B2 2.41 2.65 40 15 40 200 1.0
B1 2.52 2.78
RD2.7F B B2 2.68 2.93 40 15 40 150 1.0
B1 2.83 3.07
RD3.0F B B2 2.97 3.22 40 15 40 100 1.0
B1 3.13 3.37
RD3.3F B B2 3.27 3.51 40 15 40 80 1.0
B1 3.43 3.68
RD3.6F B B2 3.58 3.83 40 15 40 60 1.0
B1 3.73 4.00
RD3.9F B B2 3.88 4.15 40 15 40 40 1.0
B1 4.03 4.28
B2 4.15 4.41RD4.3F B B3 4.28 4.55 40 15 40 20 1.0
B1 4.41 4.65
B2 4.53 4.78RD4.7F B B3 4.66 4.91 40 10 40 20 1.0
B1 4.79 5.05
B2 4.95 5.22RD5.1F B B3 5.10 5.38 40 8 40 20 1.0
B1 5.28 5.56
B2 5.46 5.75RD5.6F B B3 5.65 5.95 40 8 40 20 1.5
B1 5.76 6.14
B2 5.98 6.33RD6.2F B B3 6.17 6.52 40 6 40 20 3.0
B1 6.35 6.71
B2 6.55 6.90RD6.8F B B3 6.74 7.10 40 6 40 20 3.5
B1 6.93 7.33
B2 7.17 7.55RD7.5F B B3 7.39 7.80 40 4 40 20 4.0
B1 7.58 8.03
B2 7.87 8.28RD8.2F B B3 8.12 8.54 40 4 40 20 5.0
B1 8.34 8.80
B2 8.64 9.08RD9.1F B B3 8.91 9.38 40 6 40 20 6.0
B1 9.16 9.67
B2 9.50 9.99RD10F B B3 9.83 10.40 40 6 40 10 7.0
B1 10.22 10.75
B2 10.54 11.09RD11F B B3 10.87 11.43 20 8 20 10 8.0
B1 11.19 11.77
B2 11.50 12.09RD12F B B3 11.80 12.41 20 8 20 10 8.0
Data Sheet D13936EJ3V0DS00 3
RD2.0F to RD82F
Type Number Zener Voltage
VZ (V)Note 1 Dynamic Impedance
ZZ (Ω)Note 2 Reverse Current
IR (
µ
A)
Suffix MIN. MAX. IZ (mA) MAX. IZ (mA) MAX. VR (V)
B1 12.19 12.85
B2 12.63 13.30RD13F B B3 13.11 13.83 20 10 20 10 10
B1 13.55 14.28
B2 14.05 14.77RD15F B B3 14.52 15.26 20 10 20 10 11
B1 14.98 15.75
B2 15.44 16.23RD16F B B3 15.89 16.71 20 12 20 10 12
B1 16.37 17.27
B2 17.03 17.91RD18F B B3 17.64 18.55 20 12 20 10 13
B1 18.26 19.21
B2 18.93 19.91RD20F B B3 19.59 20.84 20 14 20 10 15
B1 20.45 21.51
B2 21.10 22.18RD22F B B3 21.75 22.86 10 14 10 10 17
B1 22.44 23.59
B2 23.17 24.36RD24F B B3 23.90 25.14 10 16 10 10 19
B1 24.63 26.10
B2 25.70 27.12RD27F B B3 26.72 28.43 10 16 10 10 21
B1 27.43 29.09
B2 28.64 30.10RD30F B B3 29.57 31.26 10 18 10 10 23
B1 30.35 31.97
B2 31.49 33.06RD33F B B3 32.39 34.15 10 18 10 10 25
B1 33.24 34.94
B2 34.26 36.01RD36F B B3 35.19 37.01 10 20 10 10 27
B1 36.11 38.00
B2 37.14 39.04RD39F B B3 38.13 40.80 10 20 10 10 30
RD43F B 4045105010 5 33
RD47F B 4449105010 5 36
RD51F B 4854105010 5 39
RD56F B 5360105010 5 43
RD62F B 5866105010 5 47
RD68F B 6472107010 5 52
RD75F B 7079109010 5 57
RD82F B 7787109010 5 63
Note 1. Tested with pulse (40 ms).
2. ZZ is measured at IZ given an very small A.C. Current Signal.
Data Sheet D13936EJ3V0DS00
4
RD2.0F to RD82F
TYPICAL CHARACTERISTICS (TA = 25°
°°
°C)
Fig. 1 P-TA RATING Fig. 2 IZ-VZ CHARACTERISTIC
1.2
1.0
0.8
0.6
0.4
0.2
200 40 60 80 100 120 140 160 180 200
Ambient Temperature TA (°C)
= 20 mm
10 mm
5 mm
Power Dissipation P (W)
Fig. 3 IZ-VZ CHARACTERISTIC Fig. 4 IZ-VZ CHARACTERISTIC
RD39F
RD36F
RD33F
RD30F
RD27F
RD24F
RD22F
RD20F
RD18F
RD15F
40 35 30 25 20 15
1000
800
600
400
200
20
40
60
80
0
Zener Current I
Z
(mA)
Zener Voltage V
Z
(V)
I
F
(mA)
T
A
= 25°C
TYP.
V
F
(V)
0.5 1.0
P
MAX.
Fig. 5
γ
γγ
γ
Z-VZ CHARACTERISTIC Fig. 6
γ
γγ
γ
Z-VZ CHARACTERISTIC
0.1
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
40
32
24
16
8
0
−8
−16
−24
−32
−40
VZ − Temperature Coefficiency γ Z (%/°C)
VZ − Temperature Coefficiency γ Z (mV/°C)
Zener Voltage VZ (V)
%/°C
mV/°C
0 4 8 121620242832364044
RD15F
RD12F
RD10F
RD8.2F
RD7.5F
RD6.8F
RD6.2F
RD5.1F
RD4.7F
RD3.9F
RD3.3F
RD2.7FRD2.0F
V
Z
(V)
Zener Current I
Z
(mA)
Zener Voltage V
Z
(V)
15 10 5
I
F
(mA)
T
A
= 25°C
TYP.
40
80
120
160
200
240
600
400
200
0 0.5 1.0
RD82F
RD68F
RD62F
RD56F
RD51F
RD47F
RD43F P
MAX.
600
400
200
2
4
6
8
10
12
14
16
18
20
22
Zener Current I
Z
(mA)
Zener Voltage V
Z
(V)
70 60 50 408090100
I
F
(mA)
T
A
= 25°C
TYP.
RD75F
V
F
(V)
00.5
0.1
0.09
0.08
0.07
0.06
120
100
80
60
40
VZ − Temperature Coefficiency γ Z (mV/°C)
VZ − Temperature Coefficiency γ Z (%/°C)
Zener Voltage VZ (V)
%/°C
mV/°C
40 50 60 70 80 90
Data Sheet D13936EJ3V0DS00 5
RD2.0F to RD82F
Fig. 7 ZZ-IZ CHARACTERISTIC Fig. 8 Rth-S CHARACTERISTIC
Dynamic Inpedance ZZ (Ω)
Zener Current IZ (mA)
TA = 25°C
TYP.
RD6.8F
RD2.0F
RD10F
RD39F RD82F
RD4.3F
RD5.6F
RD7.5F
RD15F
RD6.2F
RD20F
RD5.1F
RD6.8FRD6.2F
RD7.5FRD10F
1 000
100
10
1
0.1 10 1001
RD15F
Fig. 9 PRSM RATING Fig. 11 POWER DISSIPATION NOMOGRAM
Peak Reverse Power P
RSM
(W)
Time t (s)
P
RSM
T
A
= 25°C
Non-
Repetitive
10 000
1 000
100
10
1
t
10
µ
100
µ
1 m 10 m 100 m 1
Fig. 10 Zth CHARACTERISTIC
150°C/W
Transient Thermal Impedance Zth (°C/W)
Time t (s)
1 000
100
10
1
0.1 100 m10 m1 m 1 10 100
Thermal Resistance R
th
(°C/W)
Size of PC Board S (mm
2
)
0
240
200
160
120
80
40
20 40 60 80 100
Junction to ambient
(Thickness = 0.035 mm)
= 5 mm
10 mm
20 mm
S
Heat
−Sink
Heat
−Sink
(incn)
Lead Length
(mm)
Heat-Sink
Temperature
T
H
(°C)
Power Dissipation
P (W)
(mm)
30
1.0
5/8
3/8
2/8
1/8
25
20
15
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
35
45
10
9
8
7
6
5
4
3
55
65
75
85
95
105
115
125
135
145
Data Sheet D13936EJ3V0DS00
6
RD2.0F to RD82F
[MEMO]
Data Sheet D13936EJ3V0DS00 7
RD2.0F to RD82F
[MEMO]
RD2.0F to RD82F
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
