MRF6S24140HR3 MRF6S24140HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, VDD =28Volts,I
DQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +68 Vdc
Gate--Source Voltage VGS --0.5, +12 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1,2) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
RJC
0.29
0.33
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6S24140H
Rev. 4, 2/2012
Freescale Semiconductor
Technical Data
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--03
NI--880S
MRF6S24140HSR3
CASE 465B--04
NI--880
MRF6S24140HR3
Freescale Semiconductor, Inc., 2007--2010, 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =68Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 300 Adc)
VGS(th) 1 2 3 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1300 mAdc, Measured in Functional Test)
VGS(Q) 22.8 4Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3Adc)
VDS(on) 0.1 0.21 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss — 2 — pF
Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD =28Vdc,I
DQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain Gps 13 15.2 17 dB
Drain Efficiency D23 25 — %
Intermodulation Distortion IM3 —-- 3 7 -- 3 5 dBc
Adjacent Channel Power Ratio ACPR —-- 4 0 -- 3 8 dBc
Input Return Loss IRL — -- 1 5 —dB
1. Part internally matched both on input and output.
MRF6S24140HR3 MRF6S24140HSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Z9 0.193x 1.170Microstrip
Z10 0.115x 0.550Microstrip
Z11 0.250x0.110Microstrip
Z12 0.538x 0.068Microstrip
Z13 0.957x 0.068Microstrip
Z14, Z15 0.673x 0.095Microstrip
PCB Taconic RF--35, 0.030,r=3.5
Z1 0.678x 0.068Microstrip
Z2 0.466x 0.068Microstrip
Z3 0.785x 0.200Microstrip
Z4 0.200x 0.530Microstrip
Z5 0.025x 0.530Microstrip
Z6, Z7 0.178x 0.050Microstrip
Z8 0.097x 1.170Microstrip
Z1
RF
INPUT
C1
Z2 Z3 Z4 Z5
DUT
Z8
C2
RF
OUTPUT
Z9 Z10 Z11 Z12 Z13
C7
B1
VBIAS
VSUPPLY
C9
+
C10
+
R1
C3
Z6
Z7
C4
B2
C13
+
C14
+
C11
C19 C20C6 C21 C22
+
Z14
C15 C16C5 C17 C18
+
Z15
C8
C12
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 47 , 100 MHz Short Ferrite Beads, Surface Mount 2743019447 Fair--Rite
C1, C2, C3, C4, C5, C6 5.6 pF Chip Capacitors ATC600B5R6BT500XT ATC
C7, C11 0.01 F, 100 V Chip Capacitors C1825C103J1RAC Kemet
C8, C12, C15, C19 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C9, C13 22 F, 25 V Tantalum Capacitors T491D226M025AT Kemet
C10, C14 47 F, 16 V Tantalum Capacitors T491D476K016AT Kemet
C16, C17, C20, C21 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C18, C22 220 F, 50 V Electrolytic Capacitors 2222--150--95102 Vishay
R1 240 , 1/4 W Chip Resistor CRC12062400FKEA Vishay
4
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
+
+
++
+ +
R1
C10 C9 C7*
C8*
B1
C1
C14
C12*
C13 C11*
B2
C6 C22
C21
C19 C20
C2
C18
C15 C16
C5 C17
CUT OUT AREA
* Stacked
MRF6S24140H
Rev. 1.0
C4
C3
MRF6S24140HR3 MRF6S24140HSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2450 MHz
Gps, POWER GAIN (dB)
5001
0
50
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
IDQ = 1200 mA
f = 2450 MHz VDD =28V
10010
40
30
20
10
11
16
15
14
13
12
D, DRAIN EFFICIENCY (%)
D
32 V
30 V
32 V
30 V
28 V
Gps, POWER GAIN (dB)
1
0
60
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
VDD =32V
IDQ = 1200 mA
f = 2450 MHz
100
40
30
20
11.5
14.5
14
13
12
D, DRAIN EFFICIENCY (%)
D
13.5
12.5
50
10
10
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
VDD =28V
f = 2450 MHz
1400 mA
10
15
13
12
11
Gps, POWER GAIN (dB)
1 10010
14
1000 mA 1300 mA
1200 mA
1100 mA
300
6
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
Zo=10
Zload
Zsource
f = 2450 MHz
f = 2450 MHz
VDD =28Vdc,I
DQ = 1200 mA, Pout = 140 W CW
f
MHz
Zsource
Zload
2450 4.55 + j4.9 1.64 -- j6.57
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 6. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3
7
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
8
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
9
RF Device Data
Freescale Semiconductor, Inc.
10
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
11
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Mar. 2007 Initial Release of Data Sheet
1Apr. 2008 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
2Feb. 2009 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 2
3Mar. 2010 Fig. 1, Test Circuit Schematic, Z--list, corrected PCB information to reflect Taconic as manufacturer, p. 3
Fig. 4, Power Gain and Drain Efficiency versus CW Output Power, corrected 28 V to read 32 V, p. 5
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 8
4Feb. 2012 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
Fig. 6, MTTF versus Junction Temperature removed, p. 5. Refer to the device’s MTTF Calculator available
at freescale.com/RFpower. Go to Design Resources > Software and Tools.
Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 7--8. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
12
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
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Document Number: MRF6S24140H
Rev. 4, 2/2012
