2009-12-04
BFP540ESD
1
1
2
3
4
NPN Silicon RF Transistor*
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding Gms = 21.5 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0°C
T
A
≤ 0°C
VCEO
4.5
4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC80 mA
Base current IB8
Total power dissipation2)
TS ≤ 77°C
Ptot 250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 290 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
hFE 50 110 170 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 4 V, f = 1 GHz
fT21 30 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.14 0.24 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.41 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.59 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
F
-
-
0.9
1.3
1.4
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21.5 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma - 16 - dB
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz
|S21e|2
16
-
18.5
14
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz
IP3- 24.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website: www.infineon.com/rf.models. Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 8 GHz using typical
devices. The BFP540ESD nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
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Total power dissipation Ptot = ƒ(TS)
0 25 50 75 100 125 150
0
50
100
150
200
250
300
T
S
[°C]
Ptot [mW]
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb = ƒ (VCB)
f = 1 MHz
0 2 4 6 8 10 12 14
0
0.05
0.1
0.15
0.2
0.25
0.3
V
CB
[V]
C
cb
[pF]
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Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
0 10 20 30 40 50 60 70 80
0
5
10
15
20
25
30
I
C
[mA]
IP
3
[dBm]
1.00V
1.50V
2.00V
3.00V
4.00V
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
30
I
C
[mA]
f
T
[GHz]
3 − 4.5V
2.00V
1.00V
0.75V
0.50V
Power gain Gma, Gms = ƒ (f)
VCE = 3 V, IC = 25 mA
0 1 2 3 4 5 6
5
10
15
20
25
30
35
40
45
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V
f = parameter in GHz
0 10 20 30 40 50 60 70 80 90 100
6
8
10
12
14
16
18
20
22
24
26
28
I
C
[mA]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
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Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 1 2 3 4 5 6
6
8
10
12
14
16
18
20
22
24
26
28
V
CE
[V]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
Noise figure F = ƒ(IC)
VCE = 3 V, f = parameter in GHz
ZS = ZSopt
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
f = 3GHz
f = 5GHz
f = 0.9GHz
f = 4GHz
f = 6GHz
f = 1.8GHz
I
c
[mA]
F [dB]
Noise figure F = ƒ(IC)
VCE = 3V, f = 1.8 GHz
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
I
c
[mA]
F [dB]
Z
S
= 50Ω
Z
S
= Z
Sopt
Noise figure F = ƒ(f)
VCE = 3 V, ZS = ZSopt
01234567
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
F [dB]
f [GHz]
I
C
= 20mA
I
C
= 5.0mA
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Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 5 mA / 20 mA
10.1 0.2 0.3 0.40.5 21.5 3 4 5
0
5
1
−5
−1
10
−10
0.5
1.5
−0.5
−1.5
0.1
−0.1
0.2
2
−0.2
−2
0.3
−0.3
0.4 3
−0.4 −3
4
−4
3GHz
I
c
= 5.0mA
1.8GHz
6GHz
5GHz
0.9GHz
I
c
= 20mA
4GHz
2.4GHz
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2009-12-04
BFP540ESD
10
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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any typical values stated herein and/or any information regarding the application of
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please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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