AOT410L/AOB410L
100V N-Channel MOSFET
SDMOSTM
General Description Product Summary
V
DS
100V
I
D
(at V
GS
=10V) 150A
R
DS(ON)
(at V
GS
=10V) < 6.5mΩ
R
DS(ON)
(at V
GS
= 7V) < 7.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
,I
AR
E
AS
,E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
P
D
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.35 65
0.45
Units
Maximum Junction-to-Ambient
A
T
C
=100°C
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
333
1.2
T
A
=25°C
Power Dissipation
B
50
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
150
108
T
C
=25°C
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
10
Continuous Drain
Current
125
12
A
The AOT410L/AOB410L is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with
low gate charge & low Q
rr
.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
V±25Gate-Source Voltage
Drain-Source Voltage 100 V
Maximum Units
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
°C/W
R
θJA
12
54 15
405Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter Typ Max
T
C
=25°C
1.9
167
T
C
=100°C
G
D
S
TO220
Top View Bottom View
GG
SDD S
D
D
TO-263
D
2
PAK
Top View Bottom View
D
D
S
G
S
AOB410L
AOT410L
Rev1: Jul 2011 www.aosmd.com Page 1 of 7
AOT410L/AOB410L
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 10
T
J
=55°C 50
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 2 3 4 V
I
D(ON)
405 A
5.1 6.5
T
J
=125°C 8.8 11
5.8 7.5 mΩ
4.8 6.2 mΩ
5.5 7.2 mΩ
g
FS
70 S
V
SD
0.63 1 V
I
S
150 A
C
iss
5290 6622 7950 pF
C
oss
415 594 770 pF
C
rss
130 215 300 pF
R
g
0.3 0.64 1 Ω
Q
g
(10V) 85 107 129 nC
Q
gs
23 28.5 34 nC
Q
gd
24 40 56 nC
t
D(on)
28 ns
t
r
22 ns
t
D(off)
43.5 ns
t
f
14.5 ns
t
rr
19 27 35 ns
Q
rr
124 177 230 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO263
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=7V, I
D
=20A
TO263
V
DS
=5V
,
I
D
=250µA
Turn-Off DelayTime V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
R
DS(ON)
Static Drain-Source On-Resistance
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
GS
=10V, I
D
=20A mΩ
T0220
V
GS
=7V, I
D
=20A
T0220
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev1: Jul 2011 www.aosmd.com Page 2 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
30
60
90
120
150
180
3 4 5 6 7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
3
4
5
6
7
8
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=7V
I
D
=20A
V
GS
=10V
I
D
=20A
4
6
8
10
12
5 6 7 8 9 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=7V
V
GS
=10V
I
D
=20A
25°C
125°C
0
30
60
90
120
150
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=5V
6.5V
7V
10V
5.5V
6V
Rev1: Jul 2011 www.aosmd.com Page 3 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 20 40 60 80 100 120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
2000
4000
6000
8000
10000
0 10 20 30 40 50 60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
1000
2000
3000
4000
5000
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=50V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
R
θJC
=0.45°C/W
Rev1: Jul 2011 www.aosmd.com Page 4 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1.0
10.0
100.0
1000.0
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
40
80
120
160
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
T
A
=25°C
1
10
100
1000
0.0001 0.01 1 100 10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=65°C/W
Rev1: Jul 2011 www.aosmd.com Page 5 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
160
200
240
280
320
0 5 10 15 20 25 30
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Q
rr
(nC)
10
15
20
25
30
35
40
I
rm
(A)
di/dt=800A/µs125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
40
80
120
160
200
240
280
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(nC)
0
10
20
30
40
I
rm
(A)
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
10
15
20
25
30
35
40
0 5 10 15 20 25 30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
rr
(ns)
-1
0
1
2
3
4
5
S
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
10
20
30
40
50
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t
rr
(ns)
0
0.5
1
1.5
2
S
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
Rev1: Jul 2011 www.aosmd.com Page 6 of 7
AOT410L/AOB410L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev1: Jul 2011 www.aosmd.com Page 7 of 7