MSCXXXX.PDF 08-12-02
SD1013-03
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF APPLICATIONS
DESCRIPTION: DESCRIPTION:
The SD1013-03 is a 28V epitaxial silicon NPN planar transistor
designed primarily for FM communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO Collector-base Voltage 65 V
VCEO Collector-emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
ICDevice Current 1.0 A
PDISS Power Dissipation 13 W
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Junction-case Thermal Resistance 13.5 °°C/W
FeaturesFeatures
• 150 MHz
• 28 VOLTS
• POUT = 10 WATTS
• GP = 10 dB MINIMUM
• ηη = 50%
• COMMON EMITTER CONFIGURATION
MSCXXXX.PDF 08-12-02
SD1013-03
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 200 mA IE = 0 mA 65 --- --- V
BVCES IC = 200 mA VBE = 0 V 65 --- --- V
BVCEO IC = 200 mA IB = 0 mA 35 --- --- V
BVEBO IE = 10 mA IC = 0 mA 4.0 --- --- V
ICBO VCB = 30 V IE = 0 mA --- --- 1.0 mA
HFE VCE = 5 V IC = 200 mA 10 --- 200 ---
DYDYNAMICNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 150 MHz PIN = 1.0W VCE = 28V 10 --- --- W
GPf = 150 MHz PIN = 1.0W VCE = 28V 10 --- --- dB
COB f = 1 MHz VCB = 30V --- --- 15 pF
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
150 MHz 3.0 + j0.5 31 + j19
PIN = 1.0W
VCC = 28V
MSCXXXX.PDF 08-12-02
SD1013-03
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
