OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 06/08
Page 1 of 3
Hermetic Infrared Emitting Diode
OP215, OP216
Applications:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor
Description:
Each OP215 and OP216 device is an 890 nm gallium aluminum arsenide infrared emitting diode (GaAIAs),
mounted in a hermetically sealed “pig tale” package with an enhanced temperature range and a narrow irradiance
pattern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher
power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicon’s peak
response. Their small package size permits high device density mounting.
The OP216 series devices provide an additional mounting tab connected to the Cathode/Case.
All these LEDs are mechanically and spe ctrall y matched to the OP300 series, OP516, OP600 series and OP640
series devices.
Please refer to Application Bulletins 20 8 and 210 for additional design inform ation and reliability (degra dation)
data, and to Application Bulletin 202 for pill-type soldering to PCBoard.
Features:
• Hermetically sealed package
• Mechanically and spectrally matched to other OPTEK devices
• Designed for direct mount to PCBoard
• Enhanced temperature range
• Excellent coupling efficiency
Ordering Information
LED Peak
Wavelength Optical Power
mW/cm2 (Min) Total Beam
Angle
OP215A OP216A
890 mm
1.20
24°
OP215B OP216B 0.60
OP215C OP216C 0.30
OP215D OP216D 0.20
Part
Number
RoHS
1
2
Pin # LED
1 Anode
2 Cathode
OP215
OP216
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 06/08
Page 2 of 3
Hermetic Infrared Emitting Diode
OP215, OP216
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -65o C to +150o C
Reverse Voltage 2.0 V
Continuous Forward Current 100 mA
Peak Forward Current (2µs pulse with 0.1% duty cycle) 1.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2)
Power Dissipation 150 mW(3)
Operating Temperature Range -65o C to +125o C
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP216, EE(APT) is a measurement using a 0.180” (4.57 mm) diameter apertured sensor placed 0.653” (16.59 mm) from the lens
tip. EE(APT) is not necessarily uniform within the measured area.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT)
(3)
Apertured Radiant Incidence
OP216A
OP216B
OP216C
OP216D
1.20
0.60
0.30
0.20
- -
mW/cm2 IF = 50 mA(4)
VF Forward Voltage - - 1.80 V IF = 50 mA
IR Reverse Current - - 100 µA VR= 2.0 V
λP Wavelength at Peak Emission - 890 - nm IF = 10 mA
B Spectral Bandwidth between
Half Power Points - 80 - nm IF = 10 mA
∆λP /∆T Spectral Shift with Temperature - +0.18 - nm/°C IF = Constant
θHP Emission Angle at Half Power Points
- 24
- Degree IF = 50 mA
tr Output Rise Time - 500 - ns
tf Output Fall Time - 250 - ns
IF(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 06/08
Page 3 of 3
Hermetic Infrared Emitting Diode
OP215, OP216
OP215 & OP216
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 5 10 15 20 25 30 35 40 45 50
Forward Current (mA)
Typical Forward Voltage (V)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Optical Power vs I
F
vs Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20 25 30 35 40 45 50
Forward Current I
F
(mA)
Normalized Optical Power
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normalize d at 50 m A and 20° C
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
Norma l ized at 1" and 50 m
A
Forward Current
Normalized Intensity vs Beam Angle
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-45 -35 -25 -15 -5 5 15 25 35 45
Normalized Intensity
Angular Displacement (° Degrees)
