APTGT150SK170 Buck chopper Trench + Field Stop IGBT(R) Power Module VCES = 1700V IC = 150A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies VBUS Q1 G1 OUT CR2 0/VBUS VBUS 0/VBUS Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile OUT E1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1700 250 150 300 20 890 Tj = 125C 300A @ 1600V TC = 25C TC = 80C TC = 25C Unit V A V W May, 2005 G1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT150SK170 - Rev 0 E1 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration APTGT150SK170 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25C) VGE = 15V VBus = 900V IC = 150A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 150A R G = 4.7 Chopper diode ratings and characteristics Symbol Characteristic VRRM 5.0 Test Conditions Typ 2.0 2.4 5.8 Typ 13.5 0.55 0.44 370 40 Max Unit 350 2.4 A 6.5 600 V nA Max Unit nF ns 650 180 400 50 800 300 48 47 Min Typ ns mJ Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1700V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 150A trr Reverse Recovery Time IF = 150A VR = 900V Qrr Reverse Recovery Charge di/dt =1600A/s Unit V Tj = 25C Tj = 125C 350 600 Tc = 80C Tj = 25C Tj = 125C Tj = 25C 150 1.8 1.9 385 Tj = 125C Tj = 25C 490 40 Tj = 125C 64 A A 2.2 V ns C May, 2005 IRM V APT website - http://www.advancedpower.com 2-5 APTGT150SK170 - Rev 0 Symbol Cies Coes Cres Td(on) Tr Min APTGT150SK170 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 3400 -40 -40 -40 3 2 Typ Max 0.14 0.26 Unit C/W V 150 125 100 5 3.5 280 C N.m g APT website - http://www.advancedpower.com 3-5 APTGT150SK170 - Rev 0 May, 2005 Package outline (dimensions in mm) APTGT150SK170 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 300 250 IC (A) IC (A) VGE=20V 200 200 T J=125C 150 VGE =13V 150 VGE =15V 100 100 50 50 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics TJ =25C 250 80 E (mJ) TJ=125C 150 3 VCE (V) 4 5 Eon Eoff 60 Er 40 100 T J=125C 50 20 0 0 5 6 7 8 9 10 11 12 0 13 50 100 150 200 250 300 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 120 350 VCE = 900V VGE =15V IC = 150A TJ = 125C 80 300 Eon 250 60 IC (A) 100 E (mJ) 2 VCE = 900V VGE = 15V RG = 4.7 TJ = 125C 100 200 1 Energy losses vs Collector Current 120 300 IC (A) T J = 125C 250 T J=25C Eoff 40 Er 200 150 VGE=15V T J=125C RG=4.7 100 20 50 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 0 30 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 IGBT 0.9 0.12 0.08 0.06 0.7 May, 2005 0.1 0.5 0.3 0.04 0.1 0.05 0 0.00001 0.02 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 1 10 4-5 APTGT150SK170 - Rev 0 Thermal Impedance (C/W) 0.16 APTGT150SK170 Forward Characteristic of diode 300 VCE =900V D=50% RG=4.7 TJ=125C TC=75C 20 ZCS 15 250 TJ=25C 200 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 ZVS 10 150 TJ=125C 100 5 hard switching TJ=125C 50 0 0 0 40 80 120 160 200 240 0 0.5 1 IC (A) 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (C/W) 0.3 Diode 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT150SK170 - Rev 0 May, 2005 rectangular Pulse Duration (Seconds)