© 1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D13293EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4 V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
•Can be driven by a 4 V power source
•Low on-state resistance
RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)3 = 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3105 SC-96 (Mini Mold Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±2.5 A
Drain Current (pulse) Note1 ID(pulse) ±10 A
Total Power Dissipation PT1 0.2 W
Total Power Dissipation Note2 PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16+0.1
–0.06
2.8 ±0.2
1.5
0.95
12
3
1.9
2.9 ±0.2
0.4 +0.1
–0.05
0.95
0.65+0.1
–0.15
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XA
Gate
Drain
★
Data Sheet D13293EJ2V0DS
2
2SK3105
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTE RISTI CS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = 30 V, VGS = 0 V –10
µ
A
Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.5 V
Forward Transfer Adm i t tance | yfs |V
DS = 10 V, ID = 1.5 A13.5S
Drain to Sourc e On-state Res i stance RDS(on)1 VGS = 10 V, ID = 1.5 A5695mΩ
RDS(on)2 VGS = 4.5 V, ID = 1.5 A 82 135 mΩ
RDS(on)3 VGS = 4.0 V, ID = 1.5 A 91 150 mΩ
Input Capac i t ance Ciss VDS = 10 V 211 pF
Output Capaci tance Coss VGS = 0 V95pF
Reverse Transf er Capacitanc e Crss f = 1 MHz 42 pF
Turn-on Delay Time td(on) VDD = 10 V12ns
Rise Time trID = 1.0 A44ns
Turn-off Del a y T i me td(off) VGS(on) = 10 V28ns
Fall Time tfRG = 10 Ω15 ns
Total Gate Charge QGVDS = 10 V2.1nC
Gate to Source Charge QGS ID = 2.5 A0.61nC
Gate to Drain Charge QGD VGS = 4.0 V0.84nC
Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V0.81V
Reverse Recovery T i me t rr IF = 2.5 A, VGS = 0 V15ns
Reverse Recovery Charge Qrr di/dt = 90 A /
µ
s3.7nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle ≤ 1 %
VGS
Wave Form
ID
Wave Form
V
GS
10 % 90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
RG = 10 Ω
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
Data Sheet D13293EJ2V0DS 3
2SK3105
TYPICAL CHARACTERISTICS (TA = 25°C)
30 150
60 90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
10 100
ID - Drain Current - A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
5 s
100
ms
10
ms
PW
=
1
ms
R
DS(on)
Limited
(@V
GS
=
10
V)
I
D(pulse)
I
D
(DC)
Single Pulse
Mounted on FR-4 Board of
50 mm x 50 mm x 1.6 mm
0.01
0.001
0.0001
0.00001 10 234 5
10
1
0.1
V
GS
- Gate to Sorce Voltage - V
−
25˚C
25˚C
T
A
= 125˚C
75˚C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V
ID = 1 mA
−50 50 1000 150
2.0
1.6
1.8
1.4
1.2
1.0
1100.1
V
DS
= 10V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.1
0.01
0.01
100
25
˚C
T
A
= −25
˚C
125
˚C
75
˚C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.10.01 10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
100
50
150
T
A
= 125˚C
75˚C
−
25˚C
25˚C
V
GS
= 4.0 V
★
Data Sheet D13293EJ2V0DS
4
2SK3105
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.10.01 10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
100
50
150
TA = 125˚C
75˚C
−
25˚C
25˚C
V
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.10.01 10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
50
0
100
T
A
= 125˚C
75˚C
−
25˚C
25˚C
V
GS
= 10 V
0
0
200
150
100
50
4812 16 20
R
DS (on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
I
D
= 1.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
100
1000
110 100
f = 1
MHz
V
GS
= 0V
C
iss
C
rss
C
oss
0.1 110
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
SWITCHING CHARACTERISTICS
V
DD
= 10V
V
GS
(
on
) = 10V
R
G
= 10Ω
t
f
t
d(off)
t
d(on)
t
r
Data Sheet D13293EJ2V0DS 5
2SK3105
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Source to Drain Current - A
VF(S-D) - Source to Drain Voltage - V
Q
G
- Gate Charge - nC
0
13542
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0
4
2
6
8
10
V
DD
= 10 V
6.0 V
I
D
= 2.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
rth(ch-A) - Transient Thermal Resistance - ˚C/W
10
1
100
1000
10.001 0.01 0.1 10 100 1000
Single Pulse
Without Board
Mounted on 250 mm x 35 m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board
µ
2
★
Data Sheet D13293EJ2V0DS
6
2SK3105
[MEMO]
Data Sheet D13293EJ2V0DS 7
2SK3105
[MEMO]
2SK3105
M8E 00. 4
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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