FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
P
O (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number Quantity Supplying Form
NESG2101M16 50 pcs (Non reel) • 8 mm wide embossed taping
NESG2101M16-T3 10 kpcs/reel • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 190 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
Document No. PU10395EJ02V0DS (2nd edition)
Date Published July 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
The mark shows major revised points.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA
DC Current Gain hFE Note 1 VCE = 2 V, IC = 15 mA 130 190 260 −
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 − GHz
Insertion Power Gain S21e2 VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 − dB
Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
− 0.9 1.2 dB
Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 0.6 − dB
Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
11.0 13.0 − dB
Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 19.0 − dB
Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.4 0.5 pF
Maximum Stable Power Gain MSG Note 3 VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 − dB
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
− 21 − dBm
Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
− 15 − dBm
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank FB
Marking zH
hFE Value 130 to 260
S21
S12
Data Sheet PU10395EJ02V0DS
2
NESG2101M16
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
300
250
200
190
150
50
025 50 75 100 125 150
100
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
1.0
0.6
0.8
0.2
0.4
0246810
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 4 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ02V0DS 3
NESG2101M16
100
40
50
60
70
80
90
10
20
30
01234
56
IB = 50 A
µ
300 A
µ
500 A
µ
350 A
µ
400 A
µ
450 A
µ
200 A
µ
150 A
µ
100 A
µ
250 A
µ
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1 000
100
10 10.1 10 100
VCE = 1 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 2 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 3 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 4 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ02V0DS
4
NESG2101M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm)
0.5±0.05
0.125+0.1
–0.05
0.40.4
0.8
0.15±0.05
1.2+0.07
–0.05
0.8+0.07
–0.05
1.0±0.05
123
654
zH
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
Data Sheet PU10395EJ02V0DS 5
NESG2101M16
M8E 00. 4 - 0110
The information in this document is current as of July, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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•
•
•
•
•
•
Data Sheet PU10395EJ02V0DS
6
NESG2101M16
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
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0306
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techinfo@csd-nec.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
NESG2101M16
