DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES * The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz * Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz * High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V * 6-pin lead-less minimold (M16, 1208 package) ORDERING INFORMATION Part Number Quantity Supplying Form NESG2101M16 50 pcs (Non reel) * 8 mm wide embossed taping NESG2101M16-T3 10 kpcs/reel * Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 190 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10395EJ02V0DS (2nd edition) Date Published July 2003 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices 2003 NESG2101M16 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 100 nA VCE = 2 V, IC = 15 mA 130 190 260 - VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 - GHz S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 - dB Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt - 0.9 1.2 dB Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt - 0.6 - dB Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 11.0 13.0 - dB Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt - 19.0 - dB VCB = 2 V, IE = 0 mA, f = 1 MHz - 0.4 0.5 pF VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 - dB - 21 - dBm - 15 - dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Note 2 Reverse Transfer Capacitance Cre Maximum Stable Power Gain MSG Gain 1 dB Compression Output Power Note 3 PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION 2 Rank FB Marking zH hFE Value 130 to 260 Data Sheet PU10395EJ02V0DS NESG2101M16 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 300 250 200 190 150 100 50 0 25 50 75 100 125 150 0.6 0.4 0.2 2 4 6 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current IC (mA) 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 10 VCE = 2 V Base to Emitter Voltage VBE (V) 10 0.0001 0.4 0.8 Collector to Base Voltage VCB (V) 1 100 f = 1 MHz Ambient Temperature TA (C) 10 0.0001 0.4 1.0 0 Collector Current IC (mA) Collector Current IC (mA) 100 Collector Current IC (mA) Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.0 VCE = 4 V 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10395EJ02V0DS 3 NESG2101M16 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 Collector Current IC (mA) 90 80 30 500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 20 100 A 70 60 50 40 10 0 IB = 50 A 1 2 3 4 6 5 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 10 0.1 100 1 10 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 4 V DC Current Gain hFE DC Current Gain hFE VCE = 3 V 100 10 0.1 1 10 100 100 10 0.1 Collector Current IC (mA) 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 100 Data Sheet PU10395EJ02V0DS 100 NESG2101M16 PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm) 1.00.05 3 0.150.05 6 5 0.125+0.1 -0.05 0.50.05 4 2 0.4 0.4 0.8 zH 1.2+0.07 -0.05 1 0.8+0.07 -0.05 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. Data Sheet PU10395EJ02V0DS 5 NESG2101M16 * The information in this document is current as of July, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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M8E 00. 4 - 0110 6 Data Sheet PU10395EJ02V0DS NESG2101M16 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0306