Ordering number : ENA1318A ATP203 N-Channel Power MOSFET http://onsemi.com 30V, 75A, 8.2m, Single ATPAK Features * * * Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in * * * Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW10s) Allowable Power Dissipation Unit 30 PW10s, duty cycle1% V 75 A 225 A 50 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 52 mJ 38 A Avalanche Current *2 Tc=25C V 20 Note : *1 VDD=10V, L=50H, IAV=38A *2 L50H, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 * Package : ATPAK * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel ATP203-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP203 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/91708PA TIIM TC-00001570 No. A1318-1/7 ATP203 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Conditions Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA V 1.2 13 VDS=10V, ID=38A ID=38A, VGS=10V ID=19A, VGS=4.5V VDS=10V, f=1MHz 1 A 10 A 2.6 22 V S 6.3 8.2 m 9.5 13.5 m 2750 pF 450 pF Reverse Transfer Capacitance Crss 265 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 420 ns Turn-OFF Delay Time td(off) 130 ns Fall Time tf 75 ns Total Gate Charge Qg 44 nC Gate-to-Source Charge Qgs 14 nC Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=15V, VGS=10V, ID=75A 5.6 IS=75A, VGS=0V 1.02 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=38A RL=0.39 VIN D PW=10s D.C.1% VOUT G ATP203 P.G 50 S Ordering Information Device ATP203-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1318-2/7 ATP203 30 25 VGS=3.5V 20 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 1.8 20 38A 15 10 5 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 Tc= 7 5 3 2 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT14004 =19A V, I D 38A , I D= 10.0V = VGS =4.5 VGS 10 5 --40 --20 0 20 Ciss, Coss, Crss -- pF td(off) 100 tf 7 5 3 tr 2 td(on) 2 3 40 60 80 100 120 5 7 1.0 2 140 160 IT14003 IS -- VSD 100 7 5 3 2 10 7 5 3 2 VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14005 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 5.0 IT14001 5 3 4.5 15 7 VDD=20V VGS=10V 10 0.1 4.0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 3.5 20 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 3 0.1 3.0 Case Temperature, Tc -- C C 5C --2 75C 2.5 RDS(on) -- Tc 0 --60 16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25 2.0 Single pulse 3 2 1.5 25 VDS=10V 5 1.0 IT14002 | yfs | -- ID 7 0.5 Gate-to-Source Voltage, VGS -- V 0 0 0 IT14000 Tc=25C Single pulse ID=19A 0 2.0 --25 C 0.6 5C 25C 0.4 Tc= 7 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns Tc= --25 C 25C 10 5 5 30 25 C 10 7 40 20 15 0 50 C 35 60 5C 40 --25 45 70 Tc= 7 50 4.0V Drain Current, ID -- A 55 VDS=10V 90 80 16.0V 10.0V Drain Current, ID -- A 60 Tc=25C 4.5V 6 .0 65 V 8.0V 70 ID -- VGS 100 75 C ID -- VDS 75 2 1000 7 5 Coss 3 Crss 2 100 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14006 7 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14007 No. A1318-3/7 ATP203 VGS -- Qg 10 7 6 5 Operation in this area is limited by RDS(on). 3 2 1.0 7 5 3 2 1 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC PD -- Tc 40 45 30 20 10 0 40 60 80 100 3 5 7 1.0 120 Case Temperature, Tc -- C 140 160 IT14010 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14009 EAS -- Ta 120 40 20 2 IT14008 50 0 Tc=25C Single pulse 0.1 0.1 Avalanche Energy derating factor -- % 60 Allowable Power Dissipation, PD -- W 10 7 5 on 2 3 2 ati 3 s 1 10 0ms 0m s er 4 ID=75A 100 7 5 PW10s 10 1 0 0 s s 1m op Drain Current, ID -- A 8 0 IDP=225A 3 2 DC Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=15V ID=75A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT14011 No. A1318-4/7 ATP203 Taping Specification ATP203-TL-H No. A1318-5/7 ATP203 Outline Drawing ATP203-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1318-6/7 ATP203 Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1318-7/7