Data Sheet 1 of 10 Rev. 03.1, 2009-02-20
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Description
The PTFA190451E and PTFA190451F are thermally-enhanced,
45-watt, internally matched LDMOS FETs designed for WCDMA,
TD-SCDMA and other cellular standards in the 1930 to 1990 MHz
frequency band. These devices are available in thermally-enhanced
packages with eared or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA190451E
Package H-36265-2
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1930 – 1990 MHz
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 450 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
30 32 34 36 38 40 42
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 11 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 16.5 17.5 —dB
Drain Efficiency ηD27 28 —%
Intermodulation Distortion IMD —–39 –37 dBc
PTFA190451F
Package H-37265-2
Features
•Broadband internal matching
•Typical two-carrier WCDMA performance at 1960
MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
•Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
•Pb-free and RoHS compliant
*See Infineon distributor for future availability.
Data Sheet 2 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
*See Infineon distributor for future availability.
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —17.5 —dB
Drain Efficiency ηD—38 —%
Intermodulation Distortion IMD —–31 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.91 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD211 W
Above 25°C derate by 1.21 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.83 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA190451E V4 H-36265-2 Thermally-enhanced slotted flanges, Tray PTFA190451E
single-ended
PTFA190451F V4 H-37265-2 Thermally-enhanced earless flange, Tray PTFA190451F
single-ended
Data Sheet 3 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Broadband Performance
VDD = 28 V, IDQ = 450 mA, POUT = 12 W
10
15
20
25
30
35
40
1900 1920 1940 1960 1980 2000 2020
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 450 mA, ƒ = 1990 MHz
13
14
15
16
17
18
19
0 10 20 30 40 50 60
Output Power (W)
Gain (dB)
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
TCASE = 25°C
TCASE = 90°C
Gain
Two-carrier WCDMA at Various Biases
VDD = 28 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
-57
-52
-47
-42
-37
-32
30 32 34 36 38 40 42
Output Power, Avg. (dBm)
3rd Order IMD (dBc)
450 mA
350 mA
400 mA
550 mA 500 mA
2-Tone Drive-up
VDD = 28 V, IDQ = 450 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Output Power, PEP (dBm)
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
IM5
Efficiency
IM7
IM3
Intermodulation Distortion (dBc)
Data Sheet 4 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
*See Infineon distributor for future availability.
IM3, Drain Efficiency and Gain
vs. Supply Voltage
IDQ = 450 mA, ƒ = 1960 MHz, POUT
(PEP) = 46.5 dBm,
tone spacing = 1 MHz
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
3rd Order IMD (dBc)
10
15
20
25
30
35
40
45
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V IDQ = 450 mA, ƒ = 1960 MHz,
POUT = 46.5 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd
5th
7th
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-55
-50
-45
-40
-35
-30
-25
30 32 34 36 38 40 42 44
Average Output Power (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
Efficiency
ACPR Up
6-Carrier TD-SCDMA Performance
VDC = 28 V, IDQ = 380 mA, ƒo = 2017.5 MHz
0
5
10
15
20
25
29 31 33 35 37 39
Output Power, Avg. (dBm)
Drain Efficiency (%)
-60
-50
-40
-30
-20
-10
ACPR (dBc)
Adj Low
Alt Up
Alt Low
Efficiency Adj Up
Data Sheet 5 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1900 15.51 –0.094 5.73 –1.71
1930 16.30 –0.444 5.68 –1.52
1960 17.19 –0.881 5.69 –1.31
1990 18.02 –1.437 5.63 –1.08
2020 18.79 –2.315 5.61 –0.91
0.1
0.3
0.5
0.2
0.4
0.1
-
W
AV
E
LE
N
GT
H
S
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1900 MHz
2020 MHz
1900 MHz
Z Source
Z Load
2020 MHz
Z0 = 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
|
Typical Performance (cont.)
Data Sheet 6 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
R4
2K V
R1
1.2K V
C9
10pF
l1
l10
R9
10 V
DUT
RF_IN RF_OUT
l7
C6
1µF
C5
0.1µF
C4
10µF
35V
C7
0.01µF
R8
5.1K
C8
10pF
R7
1K V
R6
1K V
C10
2.8pF
l8l9l11 l13
C11
10pF
C13
1µF
C12
0.02µF
C14
22µF
50V
C15
0.7pF
C16
10pF
l2l3l4l12
l5
l6
VDD
a190451ef_sch
Circuit Assembly Information
DUT PTFA190451E or PTFA190451F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper
Microstrip Electrical Characteristics at 1960 MHz1Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.031 λ, 50.0 Ω2.79 x 1.57 0.110 x 0.062
l20.089 λ, 50.0 Ω8.26 x 1.57 0.325 x 0.062
l30.076 λ, 50.0 Ω7.04 x 1.57 0.277 x 0.062
l40.045 λ, 6.7 Ω3.84 x 21.08 0.151 x 0.830
l50.014 λ, 6.7 Ω1.14 x 21.08 0.045 x 0.830
l60.007 λ, 77.0 Ω0.64 x 0.76 0.025 x 0.030
l70.123 λ, 72.0 Ω11.66 x 0.89 0.459 x 0.035
l80.016 λ, 8.5 Ω1.30 x 16.21 0.051 x 0.638
l90.096 λ, 8.5 Ω8.13 x 16.21 0.320 x 0.638
l10 0.171 λ, 67.0 Ω16.13 x 1.04 0.635 x 0.041
l11 0.053 λ, 41.0 Ω4.80 x 2.31 0.189 x 0.091
l12 0.063 λ, 41.0 Ω5.72 x 2.31 0.225 x 0.091
l13 0.030 λ, 54.0 Ω2.79 x 1.52 0.110 x 0.060
1Electrical characteristics are rounded.
Reference Circuit
Reference circuit schematic for ƒ = 1960 MHz
Data Sheet 7 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C13 Ceramic capacitor, 1 µF Digi-Key 445-1411-1-ND
C7 Capacitor, 0.01 µF ATC 200B 103
C8, C9, C11, C16 Ceramic capacitor, 10 pF ATC 100B 100
C10 Ceramic capacitor, 2.8 pF ATC 100B 2R8
C12 Capacitor, 0.02 µF ATC 200B 203
C14 Capacitor, 22 µF, 50 VDigi-Key PCE3374CT-ND
C15 Ceramic capacitor, 0.7 pF ATC 100B 0R7
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND
R8 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
Reference Circuit (cont.)
a190451ef_assy
C1
C2
R5 R3C5
R9
C9 C10 C16
C15
RF_IN RF_OUT
A190451_01 RO4350
Q1
C7 R8 C8
R6 R7
R4 C3
R2
R1
C4
QQ1
C6 C14
C12
C11
C13
VDD
*Gerber Files for this circuit available on request
a190451ef_dtl
C1
C2
R5 R3C5
R9
Q1
C7 R8 C8
R6 R7
R4 C3
R2
R1
C4
QQ1
C6
Data Sheet 8 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36265-2
Diagram Notes:—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
20.31
[.800]
10.16±0.25
[.400±.010]
FLANGE 9.78
[.385]
2x 7.11
[.280]
2X 7.11
[.280]
15.23
[.600]
4X R1.52
[R.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.56±0.38
[.140±.015
1.02
[.040]
SPH 1.57
[.062]
2007-11-16_h-36+37265_POs.vsd_h-36265-2
2X R1.60
[R.063]
15.34±0.51
[.604±.020]
2.59±0.51
[.102±.020]
Data Sheet 9 of 10 Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37265-2
Diagram Notes:—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
071119_h-36+37265_POs_h-37265-2
(45° X 2.03
[.080])
2.59±0.51
[.102±.020]
S
D
G
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
2X 7.11
[.280]
LID
10.16±0.25
[.400±.010]
10.16
[.400]
1.02
[.040]
3.56±.38
[.140±.015]
SPH 1.57
[.062]
10.16
[.400]
15.34±.51
[.604±.020]
FLANGE
4X R0.63
[R.025] MAX
|0.025 [.001]|-A-
C
L
C
L
Data Sheet 10 of 10 Rev. 03.1, 2009-02-20
PTFA190451E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-02-20 Data Sheet
Previous Version: 2006-04-21, PTFA 190451E/F V1, Data Sheet
Page Subjects (major changes since last revision)
1, 2, 8, 9, 10 New package and new product version.
7Fixed typing error
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International